Silicon Carbonitride (SiCN) Films by Remote Hydrogen Microwave Plasma CVD from Tris(dimethylamino)silane as Novel Single-Source Precursor

2010 ◽  
Vol 16 (7-9) ◽  
pp. 211-215 ◽  
Author(s):  
Aleksander M. Wrobel ◽  
Iwona Blaszczyk-Lezak ◽  
Pawel Uznanski ◽  
Bartosz Glebocki
Keyword(s):  
Microwave Plasma ◽  
Silicon Carbonitride ◽  
Single Source ◽  
Plasma Cvd ◽  
Microwave Plasma Cvd ◽  
Single Source Precursor

Silicon carbonitride by remote microwave plasma CVD from organosilicon precursor: Growth mechanism and structure of resulting Si:C:N films

2007 ◽  
Vol 253 (17) ◽  
pp. 7211-7218 ◽  
Author(s):  
I. Blaszczyk-Lezak ◽  
A.M. Wrobel ◽  
M.P.M. Kivitorma ◽  
I.J. Vayrynen ◽  
A. Tracz
Keyword(s):  
Growth Mechanism ◽  
Microwave Plasma ◽  
Silicon Carbonitride ◽  
Plasma Cvd ◽  
Microwave Plasma Cvd

Silicon Carbonitride Films Produced by Remote Hydrogen Microwave Plasma CVD Using a (Dimethylamino)dimethylsilane Precursor

2005 ◽  
Vol 11 (1) ◽  
pp. 44-52 ◽  
Author(s):  
I. Blaszczyk-Lezak ◽  
A. M. Wrobel ◽  
M. P. M. Kivitorma ◽  
I. J. Vayrynen
Keyword(s):  
Microwave Plasma ◽  
Silicon Carbonitride ◽  
Plasma Cvd ◽  
Microwave Plasma Cvd

scholarly journals Large area microwave plasma CVD of diamond using composite right/left-handed materials

2021 ◽  
Vol 116 ◽  
pp. 108394
Author(s):  
Justas Zalieckas ◽  
Paulius Pobedinskas ◽  
Martin Møller Greve ◽  
Kristoffer Eikehaug ◽  
Ken Haenen ◽  
...  
Keyword(s):  
Microwave Plasma ◽  
Plasma Cvd ◽  
Large Area ◽  
Left Handed ◽  
Microwave Plasma Cvd
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