Properties of Amorphous Hydrogenated Silicon Carbide (a-SiC:H) Films Formed by Remote Hydrogen Microwave Plasma CVD From a Triethylsilane Precursor: Part 2
2009 ◽
Vol 15
(1-3)
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pp. 39-46
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2011 ◽
Vol 17
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pp. 186-190
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2020 ◽
Vol 22
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pp. 100816
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1998 ◽
Vol 1
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pp. 81-85
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1993 ◽
Vol 44
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pp. 811-816
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2019 ◽
Vol 92
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