Numerical and analytic study of rough surface morphology on the angular distribution of eroded impurity

2017 ◽  
Vol 57 (8) ◽  
pp. 329-335 ◽  
Author(s):  
Quan Shi ◽  
Shuyu Dai ◽  
A. Kirschner ◽  
Dezhen Wang
Keyword(s):  
Angular Distribution ◽  
Surface Morphology ◽  
Rough Surface ◽  
Analytic Study ◽  
Rough Surface Morphology

scholarly journals Impact of Surface Roughness on Ion-Surface Interactions Studied with Energetic Carbon Ions 13C+ on Tungsten Surfaces

2019 ◽  
Vol 4 (1) ◽  
pp. 29 ◽  
Author(s):  
Maren Hellwig ◽  
Martin Köppen ◽  
Albert Hiller ◽  
Hans Koslowski ◽  
Andrey Litnovsky ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Angular Distribution ◽  
Surface Morphology ◽  
High Vacuum ◽  
Surface Interactions ◽  
Surface Interaction ◽  
Ultra High Vacuum ◽  
Nuclear Reaction Analysis ◽  
Angle Of Incidence ◽  
Carbon Ions

The effect of surface roughness on angular distributions of reflected and physically sputtered particles is investigated by ultra-high vacuum (UHV) ion-surface interaction experiments. For this purpose, a smooth (R a = 5.9 nm) and a rough (R a = 20.5 nm) tungsten (W) surface were bombarded with carbon ions 13C+ under incidence angles of 30 ∘ and 80 ∘ . Reflected and sputtered particles were collected on foils to measure the resulting angular distribution as a function of surface morphology. For the qualitative and quantitative analysis, secondary ion mass spectrometry (SIMS) and nuclear reaction analysis (NRA) were performed. Simulations of ion-surface interactions were carried out with the SDTrimSP (Static Dynamic Transport of Ions in Matter Sputtering) code. For rough surfaces, a special routine was derived and implemented. Experimental as well as calculated results prove a significant impact of surface roughness on the angular distribution of reflected and sputtered particles. It is demonstrated that the effective sticking of C on W is a function of the angle of incidence and surface morphology. It is found that the predominant ion-surface interaction process changes with fluence.

Morphology of instability of the wetting tips of eutectic SnBi, eutectic SnPb, and pure Sn on Cu

1995 ◽  
Vol 10 (3) ◽  
pp. 497-504 ◽  
Author(s):  
H.K. Kim ◽  
H.K. Liou ◽  
K.N. Tu
Keyword(s):  
Solder Joint ◽  
Surface Morphology ◽  
Intermetallic Compounds ◽  
Rough Surface ◽  
Environmental Issue ◽  
Wetting Angle ◽  
Angle Change ◽  
Microelectronics Industry ◽  
Pure Sn ◽  
Eutectic Snpb

The Pb-based solder used in microelectronics industry is becoming an environmental issue. To understand the wetting behavior of solders with and without Pb, we have studied the surface morphology and wetting reaction of eutectic SnBi, eutectic SnPb, and pure Sn on Cu through the measurements of wetting angle change and wetting tip stability by SEM and EDX. The wetting angle remains constant after the initial spread, but the eutectic SnPb/Cu continues to react and forms a reaction band in front of the solder edge as well as intermetallic compounds at the interface. For eutectic SnBi/Cu, there is no reaction at the wetting tip, and the wetting angle does not change much; however, the interfacial reaction between eutectic SnBi and Cu forms intermetallic compounds at the solder joint; the wetting tip is not in a static equilibrium. A rough surface and edge was observed on the eutectic SnBi/Cu joint, but the eutectic SnPb/Cu has a smoother surface and edge.

Molecular dynamics simulation of surface morphology during homoepitaxial growth of Copper

2019 ◽  
Vol 87 (3) ◽  
pp. 31301 ◽  
Author(s):  
Hicham El Azrak ◽  
Abdessamad Hassani ◽  
Abdelhadi Makan ◽  
Fouad Eddiai ◽  
Khalid Sbiaai ◽  
...  
Keyword(s):  
Thin Film ◽  
Molecular Dynamics ◽  
Surface Roughness ◽  
Surface Morphology ◽  
Md Simulation ◽  
Dynamics Simulation ◽  
Embedded Atom Method ◽  
Homoepitaxial Growth ◽  
Embedded Atom ◽  
Rough Surface Morphology

In this paper, molecular dynamics (MD) simulation of surface morphology during homoepitaxial growth of Copper was investigated. For this purpose, simulations of Cu deposition on the Cu(111) substrate with an incidence energy of 0.06 eV at 300K were performed using the embedded-atom method (EAM). The grown thin film on Cu(111) reveled a rough surface morphology. During deposition, the important fraction of atoms intended for the upper layers undergone a rising rate of about 40% starting from the 2nd period and continued to increase until 65%, while the lower level reached a permanent rate of only 25% by the 4th period. Otherwise, except at the first layer level, the lower layers are incomplete. This void in the lower layers has favored the growth of the upper layers until a rate of 143% and has accelerated their time appearance. Th incidence energy has favored the filling of lower layers by reducing this surface roughness. However, the temperature effect needs more relaxation time to fill the lower layers.

scholarly journals Angular distribution and forward peaking of laser produced plasma ions

2005 ◽  
Vol 23 (2) ◽  
pp. 131-135 ◽  
Author(s):  
M. SHAHID RAFIQUE ◽  
M. KHALEEQ-UR-RAHMAN ◽  
MUHAMMAD SHAHBAZ ANWAR ◽  
FARYAAL MAHMOOD AFSHAN ASHFAQ ◽  
KHURRAM SIRAJ
Keyword(s):  
Angular Distribution ◽  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Surface Morphology ◽  
Nd:Yag Laser ◽  
Optical Microscope ◽  
Cu Substrate ◽  
Plasma Ions ◽  
Cr 39 Detectors ◽  
Scanning Electron

This paper represents the results of a study of angular distribution of laser produced ions (LPI) of Al, Cu, and Ag. The angular distribution is studied by CR-39 (SSNTD) and ion assisted sputtering experiments. A Q-Switched Nd:YAG laser (1.064 μm, 1.1 MW) with 10 mJ pulsed energy was used to produce the Ag ions, which were detected by CR-39 detector mounted at −17.5°, 0°, 17.5°, 30°, 60°, and 90° from the normal to the target placed at a distance of 9 cm from the target. Etched CR-39 detectors then observed under the Motic DMB Series optical microscope. A bunch of ions was detected along the normal of target due to self generated collimation of ions. This is termed as Forward Peaking of Laser Produced Ions. Similar results were also observed from sputtering of polished Al substrate by laser produced ions of Cu and Sputtering of polished Cu substrate by laser produced ions of Al. The surface morphology of the ion irradiated samples were observed under the Scanning Electron microscope (SEM) S 300 Hi-tech. Formation of a circular damage on the surface of the substrates by irradiation conforms the ions collimation along the normal or Forward Peaking of ions.

scholarly journals Drop splashing on a rough surface: How surface morphology affects splashing threshold

2014 ◽  
Vol 104 (16) ◽  
pp. 161608 ◽  
Author(s):  
Hyungmo Kim ◽  
Usung Park ◽  
Chan Lee ◽  
Hyungdae Kim ◽  
Moo Hwan Kim ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Rough Surface
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