Energy Distribution of Secondary Particles in Ion Beam Deposition Process of Ag: Experiment, Calculation and Simulation

2015 ◽  
Vol 55 (10) ◽  
pp. 737-746 ◽  
Author(s):  
C. Bundesmann ◽  
R. Feder ◽  
T. Lautenschläger ◽  
H. Neumann
Keyword(s):  
Energy Distribution ◽  
Ion Beam ◽  
Deposition Process ◽  
Secondary Particles ◽  
Ion Beam Deposition ◽  
Beam Deposition

Higher nitrides of hafnium, zirconium, and titanium synthesized by dual ion beam deposition

1986 ◽  
Vol 1 (3) ◽  
pp. 442-451 ◽  
Author(s):  
B.O. Johansson ◽  
H.T.G. Hentzell ◽  
J.M.E. Harper ◽  
J.J. Cuomo
Keyword(s):  
Noble Gas ◽  
Ion Beam ◽  
Molecular Nitrogen ◽  
Deposition Process ◽  
Nitride Phase ◽  
Ion Beam Deposition ◽  
Wide Range ◽  
Nitrogen Ion ◽  
Phase Transmission ◽  
Beam Deposition

We report the preparation and properties of higher nitrides of Hf, Zr, and Ti synthesized by dual ion beam deposition. For Hf and Zr, evidence is given for the existence of a metastable nitride phase with composition of approximately Hf3 N4 and Zr3 N4. These two materials are insulating and transparent straw colored, in contrast to the well-known mononitrides, which are shiny, gold colored, and highly conducting. For Ti-N we do not reach as high an N content and do not obtain an insulating, transparent phase. The higher nitrides of Hf and Zr are synthesized under energetic nitrogen ion bombardment (200 e V) of a growing film and do not form in the presence of molecular nitrogen gas alone. Several variations of the ion beam deposition process are used to obtain a wide range of film composition and to study the transition from the mononitride to the higher nitride phase. Transmission electron diffraction shows the structure of Hf3N4 and Zr3N4 to be very close to the Bl (NaCl) structure of the mononitrides, but with a slight rhombohedral distortion. Additional evidence from noble gas incorporation (Ne, Ar, and Xe) supports a model of these higher nitrides as containing a large number of vacancies on the metal atom sites.

Influence of Vacuum Cathodic Arc Etching on Structure and Properties of W-Doped DLC Films

2013 ◽  
Vol 787 ◽  
pp. 296-300 ◽  
Author(s):  
Zhi Qiang Fu ◽  
Cheng Biao Wang ◽  
Wen Yue ◽  
Zhi Jian Peng ◽  
Song Sheng Lin ◽  
...  
Keyword(s):  
Elastic Modulus ◽  
Friction And Wear ◽  
Surface Defects ◽  
Ion Beam ◽  
Deposition Process ◽  
Average Value ◽  
Ion Beam Deposition ◽  
Cathodic Arc ◽  
Beam Deposition ◽  
Adhesion Friction

In order to further improve the deposition process of the W-doped DLC films synthesized by a hybrid deposition method of vacuum cathodic arc, ion beam deposition, and magnetron sputtering, the paper studied the effect of vacuum cathodic arc etching prior to the deposition on the surface morphology, chemical bond status, hardness, elastic modulus, adhesion, friction, and wear of the films. It was found that the surface defects in the W-doped DLC films, which increase the average value and fluctuation of the friction coefficient of the W-doped DLC films, are mainly produced by vacuum cathodic arc etching. The adhesion and wear resistance of the W-doped DLC films can be obviously improved by arc etching while arc etching has an unobvious effect on the chemical bonding status, hardness, and elastic modulus of the W-doped DLC films.

Growth of Low-Temperature Polycrystalline Si Film by Direct Negative Si Ion Beams

1996 ◽  
Vol 438 ◽  
Author(s):  
M. H. Sohn ◽  
D. Kim ◽  
Y. O. Ahn ◽  
S. I. Kim
Keyword(s):  
Grain Size ◽  
Substrate Temperature ◽  
Beam Energy ◽  
Liquid Crystal Display ◽  
Ion Beam ◽  
Thin Film Transistor ◽  
Deposition Process ◽  
Major Barrier ◽  
Ion Beam Deposition ◽  
Beam Deposition

AbstractPolycrystalline Si (Poly-Si) films were successfully grown at temperature less than 500 °C by using a direct Si ion beam deposition technique. In this process, the ion beam energy of Si- is directly coupled to the formation of the films. High substrate temperature (>600 °C), normally required for conventional CVD techniques, has been a major barrier for the Poly-Si Thin Film Transistor Liquid Crystal Display (TFT LCD) which uses a glass substrate. Thus, the ability to produce Poly-Si film below the glass transition temperature and to control the grain size will make this direct Si- ion beam deposition process a potential alternative technique for future TFT LCD. The grain size dependence on the ion beam energy and substrate temperature was investigated using a Transmission Electron Microscope (TEM). The grain size could be controlled from 0.1 μm to 1 μm at ion beam energies from 10 to 50 eV with a substrate temperature less than 500 °C. The resistivity of the as-deposited film was of the order of 100 Ωcm due to in-situ doping effect.

Electron energy loss spectroscopy of diamond-like carbon thin films

1992 ◽  
Vol 50 (2) ◽  
pp. 1272-1273
Author(s):  
J. Kulik ◽  
Y. Lifshitz ◽  
G.D. Lempert ◽  
S. Rotter ◽  
J.W. Rabalais ◽  
...  
Keyword(s):  
Thin Films ◽  
Energy Loss ◽  
Electron Energy ◽  
Ion Beam ◽  
Diamond Like Carbon ◽  
Ion Beam Deposition ◽  
Chemistry Research ◽  
Carbon Thin Films ◽  
Electron Energy Loss ◽  
Beam Deposition

Carbon thin films with diamond-like properties have generated significant interest in condensed matter science in recent years. Their extreme hardness combined with insulating electronic characteristics and high thermal conductivity make them attractive for a variety of uses including abrasion resistant coatings and applications in electronic devices. Understanding the growth and structure of such films is therefore of technological interest as well as a goal of basic physics and chemistry research. Recent investigations have demonstrated the usefulness of energetic ion beam deposition in the preparation of such films. We have begun an electron microscopy investigation into the microstructure and electron energy loss spectra of diamond like carbon thin films prepared by energetic ion beam deposition.The carbon films were deposited using the MEIRA ion beam facility at the Soreq Nuclear Research Center in Yavne, Israel. Mass selected C+ beams in the range 50 to 300 eV were directed onto Si {100} which had been etched with HF prior to deposition.

Ion beam deposition of alumina for recording head applications

1995 ◽  
Vol 31 (6) ◽  
pp. 2694-2696 ◽  
Author(s):  
M. Tan ◽  
S.-I. Tan ◽  
Yong Shen
Keyword(s):  
Ion Beam ◽  
Recording Head ◽  
Ion Beam Deposition ◽  
Beam Deposition

Area-selective formation of Si nanocrystals by assisted ion-beam irradiation during dual-ion-beam deposition

2004 ◽  
Vol 85 (9) ◽  
pp. 1595-1597 ◽  
Author(s):  
Jae Kwon Kim ◽  
Kyu Man Cha ◽  
Jung Hyun Kang ◽  
Yong Kim ◽  
Jae-Yel Yi ◽  
...  
Keyword(s):  
Ion Beam ◽  
Beam Irradiation ◽  
Ion Beam Irradiation ◽  
Ion Beam Deposition ◽  
Si Nanocrystals ◽  
Selective Formation ◽  
Beam Deposition

Stress relaxation and optical characterization of TiO2 and SiO2 films grown by dual ion beam deposition

2008 ◽  
Vol 516 (23) ◽  
pp. 8604-8608 ◽  
Author(s):  
C. Bundesmann ◽  
I.-M. Eichentopf ◽  
S. Mändl ◽  
H. Neumann
Keyword(s):  
Stress Relaxation ◽  
Ion Beam ◽  
Optical Characterization ◽  
Sio2 Films ◽  
Ion Beam Deposition ◽  
Beam Deposition

Multilayer growth by low energy ion beam deposition

1999 ◽  
Vol 198-199 ◽  
pp. 731-733 ◽  
Author(s):  
D.E Joyce ◽  
N.D Telling ◽  
J.A Van den Berg ◽  
D.G Lord ◽  
P.J Grundy
Keyword(s):  
Ion Beam ◽  
Low Energy ◽  
Ion Beam Deposition ◽  
Beam Deposition
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