Fractionability of circuit components

2020 ◽  
Vol 48 (12) ◽  
pp. 2280-2285
Author(s):  
Antonino M. Sommariva
Keyword(s):  
Circuit Components

Scanning Electron Microscopy in Hybrid Microelectronics

1976 ◽  
Vol 34 ◽  
pp. 456-457
Author(s):  
S. Khadpe ◽  
R. Faryniak
Keyword(s):  
Integrated Circuits ◽  
Thick Film ◽  
Integrated Circuit ◽  
Failure Modes ◽  
Three Dimensional ◽  
Circuit Components ◽  
Hybrid Microcircuit ◽  
Electrical Connections ◽  
Scanning Electron

The Scanning Electron Microscope (SEM) is an important tool in Thick Film Hybrid Microcircuits Manufacturing because of its large depth of focus and three dimensional capability. This paper discusses some of the important areas in which the SEM is used to monitor process control and component failure modes during the various stages of manufacture of a typical hybrid microcircuit.Figure 1 shows a thick film hybrid microcircuit used in a Motorola Paging Receiver. The circuit consists of thick film resistors and conductors screened and fired on a ceramic (aluminum oxide) substrate. Two integrated circuit dice are bonded to the conductors by means of conductive epoxy and electrical connections from each integrated circuit to the substrate are made by ultrasonically bonding 1 mil aluminum wires from the die pads to appropriate conductor pads on the substrate. In addition to the integrated circuits and the resistors, the circuit includes seven chip capacitors soldered onto the substrate. Some of the important considerations involved in the selection and reliability aspects of the hybrid circuit components are: (a) the quality of the substrate; (b) the surface structure of the thick film conductors; (c) the metallization characteristics of the integrated circuit; and (d) the quality of the wire bond interconnections.

Emerging Techniques for the Characterization of Nano-Mechanical Properties of Integrated Circuit Components

2008 ◽  
Author(s):  
Nicholas Randall ◽  
Rahul Premachandran Nair
Keyword(s):  
Mechanical Properties ◽  
Quality Control ◽  
Integrated Circuits ◽  
Integrated Circuit ◽  
Manufacturing Process ◽  
Solder Bumps ◽  
Initial Work ◽  
Circuit Components ◽  
Materials Used

Abstract With the growing complexity of integrated circuits (IC) comes the issue of quality control during the manufacturing process. In order to avoid late realization of design flaws which could be very expensive, the characterization of the mechanical properties of the IC components needs to be carried out in a more efficient and standardized manner. The effects of changes in the manufacturing process and materials used on the functioning and reliability of the final device also need to be addressed. Initial work on accurately determining several key mechanical properties of bonding pads, solder bumps and coatings using a combination of different methods and equipment has been summarized.

LOW-POWER, PARALLEL INTERFACE WITH CONTINUOUS-TIME ADAPTIVE PASSIVE EQUALIZER AND CROSSTALK CANCELLATION

2005 ◽  
Vol 15 (02) ◽  
pp. 459-476
Author(s):  
C. PATRICK YUE ◽  
JAEJIN PARK ◽  
RUIFENG SUN ◽  
L. RICK CARLEY ◽  
FRANK O'MAHONY
Keyword(s):  
Low Power ◽  
Electromagnetic Interference ◽  
Continuous Time ◽  
High Speed ◽  
High Performance ◽  
Process Variations ◽  
Cmos Process ◽  
Power Circuit ◽  
Crosstalk Cancellation ◽  
Circuit Components

This paper presents the low-power circuit techniques suitable for high-speed digital parallel interfaces each operating at over 10 Gbps. One potential application for such high-performance I/Os is the interface between the channel IC and the magnetic read head in future compact hard disk systems. First, a crosstalk cancellation technique using a novel data encoding scheme is introduced to suppress electromagnetic interference (EMI) generated by the adjacent parallel I/Os . This technique is implemented utilizing a novel 8-4-PAM signaling with a data look-ahead algorithm. The key circuit components in the high-speed interface transceiver including the receive sampler, the phase interpolator, and the transmitter output driver are described in detail. Designed in a 0.13-μm digital CMOS process, the transceiver consumes 310 mW per 10-Gps channel from a I-V supply based on simulation results. Next, a 20-Gbps continuous-time adaptive passive equalizer utilizing on-chip lumped RLC components is described. Passive equalizers offer the advantages of higher bandwidth and lower power consumption compared with conventional designs using active filter. A low-power, continuous-time servo loop is designed to automatically adjust the equalizer frequency response for the optimal gain compensation. The equalizer not only adapts to different channel characteristics, but also accommodates temperature and process variations. Implemented in a 0.25-μm, 1P6M BiCMOS process, the equalizer can compensate up to 20 dB of loss at 10 GHz while only consumes 32 mW from a 2.5-V supply.

PARAMETRIC DEVIATION BASED ANALOG TEST AND DIAGNOSIS SYSTEM

2011 ◽  
Vol 20 (07) ◽  
pp. 1323-1340 ◽  
Author(s):  
KASTURI GHOSH ◽  
ARABINDA ROY ◽  
SEKHAR MONDAL ◽  
BAIDYANATH RAY
Keyword(s):  
Cellular Automata ◽  
Analog Circuits ◽  
Significant Enhancement ◽  
Performance Parameters ◽  
Analog Test ◽  
Diagnosis System ◽  
Response Data ◽  
Circuit Components ◽  
Diagnostic Resolution

This paper reports a comprehensive solution for the problem of test and diagnosis of OTA based analog circuits. Based on the parametric deviation of circuit components, a test and diagnosis methodology are proposed. Compressed signature generated out of multiple performance parameters has resulted in significant enhancement in fault diagnosing capability. The voluminous response data has been handled with Cellular Automata (CA) based classifier to achieve excellent diagnostic resolution.

scholarly journals A 1.5–40 GHz frequency modulated continuous wave radar receiver front-end

2021 ◽  
pp. 1-11
Author(s):  
Mantas Sakalas ◽  
Niko Joram ◽  
Frank Ellinger
Keyword(s):  
Continuous Wave ◽  
Noise Figure ◽  
Supply Voltage ◽  
Low Noise ◽  
Ultra Wideband ◽  
Front End ◽  
Wave Radar ◽  
Bicmos Technology ◽  
Circuit Components ◽  
High Band

Abstract This study presents an ultra-wideband receiver front-end, designed for a reconfigurable frequency modulated continuous wave radar in a 130 nm SiGe BiCMOS technology. A variety of innovative circuit components and design techniques were employed to achieve the ultra-wide bandwidth, low noise figure (NF), good linearity, and circuit ruggedness to high input power levels. The designed front-end is capable of achieving 1.5–40 GHz bandwidth, 30 dB conversion gain, a double sideband NF of 6–10.7 dB, input return loss better than 7.5 dB and an input referred 1 dB compression point of −23 dBm. The front-end withstands continuous wave power levels of at least 25 and 20 dBm at low band and high band inputs respectively. At 3 V supply voltage, the DC power consumption amounts to 302 mW when the low band is active and 352 mW for the high band case, whereas the total IC size is $3.08\, {\rm nm{^2}}$ .

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