A FinFET SRAM cell design with BTI robustness at high supply voltages and high yield at low supply voltages

2015 ◽  
Vol 43 (12) ◽  
pp. 2011-2024 ◽  
Author(s):  
Behzad Ebrahimi ◽  
Reza Asadpour ◽  
Ali Afzali-Kusha ◽  
Massoud Pedram
Keyword(s):  
High Yield ◽  
Cell Design ◽  
Sram Cell ◽  
Supply Voltages

Radiation Tolerant SRAM Cell Design in 65nm Technology

2021 ◽  
Author(s):  
JianAn Wang ◽  
Xue Wu ◽  
Haonan Tian ◽  
Lixiang Li ◽  
Shuting Shi ◽  
...  
Keyword(s):  
Cell Design ◽  
Sram Cell ◽  
Radiation Tolerant

A 10T Cell Design without Half Select Problem for Bit-Interleaving Architecture in 65nm CMOS

2013 ◽  
Vol 373-375 ◽  
pp. 1607-1611
Author(s):  
Hong Gang Zhou ◽  
Shou Biao Tan ◽  
Qiang Song ◽  
Chun Yu Peng
Keyword(s):  
Error Correction ◽  
Low Voltage ◽  
Cmos Technology ◽  
Soft Error ◽  
Error Correction Codes ◽  
Cell Design ◽  
Low Voltage Operation ◽  
Sram Cell ◽  
Simulation Results ◽  
Nanometer Regime

With the scaling of process technologies into the nanometer regime, multiple-bit soft error problem becomes more serious. In order to improve the reliability and yield of SRAM, bit-interleaving architecture which integrated with error correction codes (ECC) is commonly used. However, this leads to the half select problem, which involves two aspects: the half select disturb and the additional power caused by half-selected cells. In this paper, we propose a new 10T cell to allow the bit-interleaving array while completely eliminating the half select problem, thus allowing low-power and low-voltage operation. In addition, the RSNM and WM of our proposed 10T cell are improved by 21% and nearly one times, respectively, as compared to the conventional 6T SRAM cell in SMIC 65nm CMOS technology. We also conduct a comparison with the conventional 6T cell about the leakage simulation results, which show 14% of leakage saving in the proposed 10T cell.

Stable SRAM cell design for the 32 nm node and beyond

2005 ◽  
Author(s):  
L. Chang ◽  
D.M. Fried ◽  
J. Hergenrother ◽  
J.W. Sleight ◽  
R.H. Dennard ◽  
...  
Keyword(s):  
Cell Design ◽  
Sram Cell
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