Liquid phase epitaxy of SiC in the system TbSiSiC by temperature gradient zone melting (III). Epitaxial layer properties

1987 ◽  
Vol 22 (1) ◽  
pp. 59-64 ◽  
Author(s):  
N. S. Peev ◽  
Yu. M. Tairov ◽  
N. A. Smirnova ◽  
A. A. Kalnin
Keyword(s):  
Liquid Phase ◽  
Temperature Gradient ◽  
Epitaxial Layer ◽  
Liquid Phase Epitaxy ◽  
Zone Melting ◽  
Gradient Zone

The kinetics of liquid-phase epitaxy of moving-temperature-gradient zone refining

1977 ◽  
Vol 20 (3) ◽  
pp. 354-358
Author(s):  
V. N. Lozovskii ◽  
V. P. Popov ◽  
I. P. Papkov
Keyword(s):  
Liquid Phase ◽  
Temperature Gradient ◽  
Liquid Phase Epitaxy ◽  
Zone Refining ◽  
Gradient Zone ◽  
Kinetics Of

scholarly journals Cellular automaton simulation of molten pool migration due to temperature gradient zone melting

2019 ◽  
Vol 68 (4) ◽  
pp. 048102
Author(s):  
Hui Fang ◽  
Hua Xue ◽  
Qian-Yu Tang ◽  
Qing-Yu Zhang ◽  
Shi-Yan Pan ◽  
...  
Keyword(s):  
Temperature Gradient ◽  
Cellular Automaton ◽  
Molten Pool ◽  
Zone Melting ◽  
Gradient Zone

LPE Growth of Low Doped n-Type 4H-SiC Layer on On-Axis Substrate for Power Device Application

2009 ◽  
Vol 615-617 ◽  
pp. 141-144 ◽  
Author(s):  
Ryo Hattori ◽  
Kazuhito Kamei ◽  
Kazuhiko Kusunoki ◽  
Nobuyoshi Yashiro ◽  
S. Shimosaki
Keyword(s):  
Liquid Phase ◽  
Epitaxial Layer ◽  
Liquid Phase Epitaxy ◽  
Basal Plane ◽  
Power Device ◽  
Device Application ◽  
Basal Plane Dislocation ◽  
Low Nitrogen

LPE (liquid phase epitaxy) growth of low nitrogen unintentionally doped SiC epitaxial layer on on-axis 4H-SiC substrate using nitrogen getter Si based solution was investigated to realize basal plane dislocation (BPD) free epitaxial layer. A significant reduction in BPD was demonstrated.

Temperature Gradient Zone Melting

JOM ◽  
1955 ◽  
Vol 7 (9) ◽  
pp. 961-964 ◽  
Author(s):  
W. G. Pfann
Keyword(s):  
Temperature Gradient ◽  
Zone Melting ◽  
Gradient Zone
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