Mechanism of Single‐Crystal Growth in InSb using Temperature‐Gradient Zone Melting

1968 ◽  
Vol 39 (3) ◽  
pp. 1758-1765 ◽  
Author(s):  
Raymond W. Hamaker ◽  
William B. White
Keyword(s):  
Crystal Growth ◽  
Temperature Gradient ◽  
Single Crystal ◽  
Single Crystal Growth ◽  
Zone Melting ◽  
Gradient Zone

Effect of Marangoni Convection on InSb Single Crystal Growth by Horizontal Bridgman Method

2001 ◽  
Vol 692 ◽  
Author(s):  
K. Kodera ◽  
A. Kinoshita ◽  
K. Arafune ◽  
Y. Nakae ◽  
A. Hirata
Keyword(s):  
Crystal Growth ◽  
Binary System ◽  
Temperature Gradient ◽  
Single Crystal ◽  
Grown Crystal ◽  
Marangoni Convection ◽  
Single Crystal Growth ◽  
Control Technique ◽  
Growth System

AbstractIt is necessary to clarify the effect of Marangoni convection on single crystal growth from a melt in order to improve the quality of the grown crystal. Particularly, the deviation of crystalmelt (C-M) interface from a planar shape is a major problem because it may deteriorate the quality of the grown crystal. In this paper, we investigated the effect of thermal and solutal Marangoni convection on C-M interface shape in an In-Sb binary system by the horizontal Bridgman (HB) method. The C-M interface concavity strongly depends on the cooling rate and the temperature gradient under uniform concentration distribution conditions in the melt. A large concavity was observed at low cooling rates and high temperature gradient conditions. The concavity was found to be caused by thermal Marangoni convection, by taking Péclet number into account. Then, we varied the composition of the In-Sb binary system to induce solutal Marangoni convection intentionally. The C-M interface was kept planar in case solutal Marangoni convection occurred in the direction opposite to the thermal one. Therefore, we believe that the utilization of solutal Marangoni convection will be a new control technique to make the C-M interface planar for the HB system. From these results, it was clarified that Marangoni convection plays a significant role in the HB crystal growth system.

Single-crystal growth of n-type SnS0.95 by the temperature-gradient technique

Vacuum ◽  
2020 ◽  
Vol 182 ◽  
pp. 109789
Author(s):  
Yinong Yin ◽  
Jianfeng Cai ◽  
Hongxiang Wang ◽  
Yukun Xiao ◽  
Haoyang Hu ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Temperature Gradient ◽  
Single Crystal ◽  
Single Crystal Growth ◽  
Gradient Technique ◽  
Temperature Gradient Technique

Single crystal growth of GaN by the temperature gradient Na flux method

2004 ◽  
Vol 266 (4) ◽  
pp. 461-466 ◽  
Author(s):  
Masato Aoki ◽  
Hisanori Yamane ◽  
Masahiko Shimada ◽  
Seiji Sarayama ◽  
Hirokazu Iwata ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Temperature Gradient ◽  
Single Crystal ◽  
Single Crystal Growth ◽  
Flux Method

Near-stoichiometric LiNbO3 single-crystal growth by metal strip-heated zone melting technique

2004 ◽  
Vol 263 (1-4) ◽  
pp. 421-426 ◽  
Author(s):  
D.Q. Ni ◽  
W.Y. Wang ◽  
D.F. Zhang ◽  
X. Wu ◽  
X.L. Chen ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Single Crystal ◽  
Single Crystal Growth ◽  
Zone Melting ◽  
Metal Strip ◽  
Heated Zone ◽  
Melting Technique

Die Kristall- und Molekülstruktur von Tris(dimethylamino)boran / The Crystal and Molecular Structure of Tris(dimethylamino)borane

1982 ◽  
Vol 37 (10) ◽  
pp. 1230-1233 ◽  
Author(s):  
Günter Schmid ◽  
Roland Boese ◽  
Dieter Bläser
Keyword(s):  
Molecular Structure ◽  
Crystal Growth ◽  
Single Crystal ◽  
Room Temperature ◽  
Crystal And Molecular Structure ◽  
Melting Process ◽  
Single Crystal Growth ◽  
Zone Melting ◽  
X Ray Diffraction ◽  
X Ray

Abstract Tris(dimethylamino)borane, X-ray The crystal and molecular structure of tris(dimethylamino)borane, a liquid at room temperature, has been determined by single-crystal X-ray diffraction methods at - 116°C. The single-crystal growth was accomplished by means of a miniature zone melting process on the diffractometer. The structure data are compared with those of other aminoboranes.

Single-crystal growth of iridium with [100] and [110] orientations by electron beam zone melting

Vacuum ◽  
2018 ◽  
Vol 154 ◽  
pp. 141-147 ◽  
Author(s):  
Binqiang Wang ◽  
Shuangming Li ◽  
Yuming Wang ◽  
Hong Zhong ◽  
Rui Hu ◽  
...  
Keyword(s):  
Electron Beam ◽  
Crystal Growth ◽  
Single Crystal ◽  
Single Crystal Growth ◽  
Zone Melting

Hexagonal Boron Nitride Single Crystal Growth from Solution with a Temperature Gradient

2020 ◽  
Vol 32 (12) ◽  
pp. 5066-5072 ◽  
Author(s):  
Jiahan Li ◽  
Chao Yuan ◽  
Christine Elias ◽  
Junyong Wang ◽  
Xiaotian Zhang ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Temperature Gradient ◽  
Boron Nitride ◽  
Single Crystal ◽  
Hexagonal Boron Nitride ◽  
Single Crystal Growth ◽  
Growth From Solution
Sign in / Sign up

Export Citation Format

Share Document