Numerical design of Metal-Organic Vapour Phase Epitaxy process for gallium nitride epitaxial growth

2016 ◽  
Vol 51 (12) ◽  
pp. 762-770 ◽  
Author(s):  
J. Skibinski ◽  
P. Caban ◽  
T. Wejrzanowski ◽  
G.J. Oliver ◽  
K.J. Kurzydlowski
Keyword(s):  
Gallium Nitride ◽  
Epitaxial Growth ◽  
Vapour Phase ◽  
Vapour Phase Epitaxy ◽  
Numerical Design ◽  
Metal Organic ◽  
Organic Vapour

Metal-organic vapour-phase epitaxy of gallium nitride nanostructures for optoelectronic applications

2009 ◽  
Vol 40 (2) ◽  
pp. 333-335 ◽  
Author(s):  
S. Fündling ◽  
U. Jahn ◽  
A. Trampert ◽  
H. Riechert ◽  
H.-H. Wehmann ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Vapour Phase ◽  
Vapour Phase Epitaxy ◽  
Metal Organic ◽  
Organic Vapour ◽  
Optoelectronic Applications

Luminescence properties of hole traps in homojunction gallium nitride diodes grown by metal organic vapour phase epitaxy

2006 ◽  
Vol 130 (1-3) ◽  
pp. 173-176 ◽  
Author(s):  
M. Asghar ◽  
P. Muret ◽  
I. Hussain ◽  
B. Beaumont ◽  
P. Gibart ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Vapour Phase ◽  
Luminescence Properties ◽  
Vapour Phase Epitaxy ◽  
Metal Organic ◽  
Organic Vapour

ZnSe metal organic vapour-phase epitaxy on GaAs: substrate preparation as the limiting factor in ZnSe growth

1998 ◽  
Vol 184-185 ◽  
pp. 1338 ◽  
Author(s):  
D.N. Gnoth ◽  
T.L. Ng ◽  
I.B. Poole ◽  
D.A. Evans ◽  
N. Maung ◽  
...  
Keyword(s):  
Gaas Substrate ◽  
Vapour Phase ◽  
Limiting Factor ◽  
Substrate Preparation ◽  
Vapour Phase Epitaxy ◽  
Metal Organic ◽  
Organic Vapour

EXCITON AND BIEXCITON PHENOMENA IN ZINC SULPHIDE EPILAYERS

1996 ◽  
Vol 05 (04) ◽  
pp. 621-629 ◽  
Author(s):  
J. VALENTA ◽  
D. GUENNANI ◽  
A. MANAR ◽  
P. GILLIOT
Keyword(s):  
Optical Gain ◽  
Vapour Phase ◽  
Zinc Sulphide ◽  
Detailed Characterization ◽  
Vapour Phase Epitaxy ◽  
Nanosecond Lasers ◽  
Metal Organic ◽  
Organic Vapour ◽  
Linear Optical Properties

The detailed characterization of metal organic vapour phase epitaxy grown ZnS layers on GaAs is the first step towards the study of their different non-linear optical properties performed with nanosecond lasers. Biexciton phenomena (with a binding energy of about 10 meV) are observed in photoluminescence-excitation and optical-gain spectra.

Auto-épitaxie et propriétés d'As–Ga obtenu par épitaxie en phase vapeur à partir de composés organo-métalliques

1985 ◽  
Vol 63 (6) ◽  
pp. 732-735 ◽  
Author(s):  
M. Benzaquen ◽  
D. Walsh ◽  
J. Auclair
Keyword(s):  
Vapour Phase ◽  
Free Carrier ◽  
Variable Range Hopping ◽  
Vapour Phase Epitaxy ◽  
Metal Organic ◽  
Organic Vapour ◽  
Phase Vapeur ◽  
Extended States ◽  
Good Uniformity ◽  
Donor States

Lightly compensated epitactic n-type GaAs is obtained by metal-organic vapour-phase epitaxy (MOVPE) with free-carrier concentration in the low 1015 cm−3 range and with good uniformity of both thickness and impurity concentrations over a 2-in.-diameter area (1 in. = 2.54 cm). Detailed Hall-effect and photoluminescence measurements are reported. At temperatures below 8 K, the conductivity is governed by variable-range hopping, clearly indicating a band of localized donor states. At higher impurity concentrations, a metallic contribution to the conductivity suggests a buildup of extended states near the middle of this band. These results are consistent with the observed photoluminescence.

scholarly journals Characterisation of III?V Multilayers Grown by Low-pressure Metal Organic Vapour-phase Epitaxy

1993 ◽  
Vol 46 (3) ◽  
pp. 435
Author(s):  
C Jagadish ◽  
A Clark ◽  
G Li ◽  
CA Larson ◽  
N Hauser ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Growth Temperature ◽  
Deep Level ◽  
Growth Parameters ◽  
Low Pressure ◽  
Vapour Phase ◽  
Growth Conditions ◽  
Vapour Phase Epitaxy ◽  
Metal Organic ◽  
Organic Vapour

Undoped and doped layers of gallium arsenide and aluminium gallium arsenide have been grown on gallium arsenide by low-pressure metal organic vapour-phase epitaxy (MOVPE). Delta doping and growth on silicon substrates have also been attempted. Of particular interest in the present study has been the influence of growth parameters, such as growth temperature, group III mole fraction and dopant flow, on the electrical and physical properties of gallium arsenide layers. An increase in growth temperature leads to increased doping efficiency in the case of silicon, whereas the opposite is true in the case of zinc. Deep level transient spectroscopy (DTLS) studies on undoped GaAs layers showed two levels, the expected EL2 level and a carbon-related level. The determination of optimum growth conditions has allowed good quality GaAs and AlGaAs epitaxial layers to be produced for a range of applications.`

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