Atomic‐Scale Edge Morphology, Stability, and Oxidation of Single‐Layer 2H‐TaS 2

ChemPlusChem ◽  
2020 ◽  
Vol 85 (12) ◽  
pp. 2557-2564
Author(s):  
Jana Martincová ◽  
Michal Otyepka ◽  
Petr Lazar
Keyword(s):  
Single Layer ◽  
Atomic Scale ◽  
Edge Morphology

Atomic-Scale Chemical Conversion of Single-Layer Transition Metal Dichalcogenides

ACS Nano ◽  
2019 ◽  
Vol 13 (5) ◽  
pp. 5611-5615
Author(s):  
Peng Chen ◽  
Yun-Ting Chen ◽  
Ro-Ya Liu ◽  
Han-De Chen ◽  
Dengsung Lin ◽  
...  
Keyword(s):  
Transition Metal ◽  
Transition Metal Dichalcogenides ◽  
Single Layer ◽  
Chemical Conversion ◽  
Atomic Scale ◽  
Layer Transition ◽  
Metal Dichalcogenides

scholarly journals A Chemical Approach to 2D-2D Heterostructures Beyond Van Der Waals: High-Throughput On-Device Covalent Connection of MoS2 and Graphene

2021 ◽  
Author(s):  
Manuel Vázquez Sulleiro ◽  
Aysegul Develioglu ◽  
Ramiro Quirós-Ovies ◽  
Natalia Martín Sabanés ◽  
I. Jénnifer Gómez ◽  
...  
Keyword(s):  
Field Effect Transistors ◽  
Van Der Waals ◽  
Single Layer ◽  
Atomic Scale ◽  
Single Layer Graphene ◽  
Bifunctional Molecule ◽  
Chemical Approach ◽  
Direct Growth ◽  
Anchor Points ◽  
Scale Control

<p>The most widespread method for the synthesis of 2D-2D heterostructures is the direct growth of one material on top of the other. Alternatively, one can manually stack flakes of different materials. Both methods are limited to one crystal/device at a time and involve interfacing the 2D materials through van der Waals forces, to the point that all these materials are known as van der Waals heterostructures. Synthetic chemistry is the paradigm of atomic-scale control, yet its toolbox remains unexplored for the construction of 2D-2D heterostructures. Here, we describe how to covalently connect 2H-MoS<sub>2</sub> flakes to several single-layer graphene field-effect transistors simultaneously, and show that the final electronic properties of the MoS<sub>2</sub>-graphene heterostructure are dominated by the molecular interface. We use a bifunctional molecule with two chemically orthogonal anchor points, selective for sulphides and carbon-based materials. Our experiments highlight the potential of the chemical approach to build 2D-2D heterostructures beyond van der Waals. </p>

scholarly journals Atomic Layer Deposition of Titanium Oxide on Single-Layer Graphene: An Atomic-Scale Study toward Understanding Nucleation and Growth

2017 ◽  
Vol 29 (5) ◽  
pp. 2232-2238 ◽  
Author(s):  
Yucheng Zhang ◽  
Carlos Guerra-Nuñez ◽  
Ivo Utke ◽  
Johann Michler ◽  
Piyush Agrawal ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Titanium Oxide ◽  
Single Layer ◽  
Atomic Layer ◽  
Nucleation And Growth ◽  
Atomic Scale ◽  
Single Layer Graphene ◽  
Layer Graphene ◽  
Layer Deposition

scholarly journals Disordered hyperuniformity in two-dimensional amorphous silica

2020 ◽  
Vol 6 (16) ◽  
pp. eaba0826 ◽  
Author(s):  
Yu Zheng ◽  
Lei Liu ◽  
Hanqing Nan ◽  
Zhen-Xiong Shen ◽  
Ge Zhang ◽  
...  
Keyword(s):  
Amorphous Silica ◽  
Density Functional ◽  
Large Scale ◽  
Single Layer ◽  
Topological Defects ◽  
Density Functional Theory Calculations ◽  
Density Fluctuations ◽  
Atomic Scale ◽  
Two Dimensional ◽  
Wave Localization

Disordered hyperuniformity (DHU) is a recently proposed new state of matter, which has been observed in a variety of classical and quantum many-body systems. DHU systems are characterized by vanishing infinite-wavelength normalized density fluctuations and are endowed with unique novel physical properties. Here, we report the discovery of disordered hyperuniformity in atomic-scale two-dimensional materials, i.e., amorphous silica composed of a single layer of atoms, based on spectral-density analysis of high-resolution transmission electron microscopy images. Moreover, we show via large-scale density functional theory calculations that DHU leads to almost complete closure of the electronic bandgap compared to the crystalline counterpart, making the material effectively a metal. This is in contrast to the conventional wisdom that disorder generally diminishes electronic transport and is due to the unique electron wave localization induced by the topological defects in the DHU state.

Morphology and atomic-scale structure of single-layer WS2 nanoclusters

2013 ◽  
Vol 15 (38) ◽  
pp. 15971 ◽  
Author(s):  
Henrik G. Füchtbauer ◽  
Anders K. Tuxen ◽  
Poul G. Moses ◽  
Henrik Topsøe ◽  
Flemming Besenbacher ◽  
...  
Keyword(s):  
Single Layer ◽  
Scale Structure ◽  
Atomic Scale ◽  
Atomic Scale Structure

Atomic-scale imaging and analysis of single layer GP zones in a model steel

2011 ◽  
Vol 47 (3) ◽  
pp. 1567-1571 ◽  
Author(s):  
F. Danoix ◽  
T. Epicier ◽  
F. Vurpillot ◽  
D. Blavette
Keyword(s):  
Single Layer ◽  
Atomic Scale

scholarly journals Macroscopic Assembled Graphene for Silicon Mid-Infrared Photodetectors

2020 ◽  
Author(s):  
Chao Gao ◽  
Li Peng ◽  
Sichao Du ◽  
Lixiang Liu ◽  
Srikrishna Bodepudi ◽  
...  
Keyword(s):  
Impact Ionization ◽  
Single Layer ◽  
Atomic Scale ◽  
Hot Electrons ◽  
Single Layer Graphene ◽  
Quantum Yields ◽  
Infrared Range ◽  
Mid Infrared ◽  
Hot Carrier ◽  
Layer Graphene

Abstract Graphene with linear energy dispersion and weak electron-phonon interaction is highly anticipated to harvest hot-electrons in a broad wavelength range from ultraviolet to terahertz. However, the limited absorption (~2.3%) and serious backscattering of hot-electrons associated with single-layer graphene result in inadequate quantum yields, impeding their practically broadband photodetection, especially in the mid-infrared range. Here, we report a macroscopic assembled graphene (MAG)/silicon heterojunction for ultrafast mid-infrared photodetection. The highly crystalline 2-inch scale MAG with tunable thickness from 10 to 60 nm is produced by scalable wet-assembly of commercial graphene oxide followed by thermal annealing. The MAG/Si Schottky diode exhibits broadband photodetection capability in 1-10 μm at room temperature with fast response (120-130 ns, 4 mm2 window) and high detectivity (1011 to 106 Jones), outperforming single-layer graphene/Si photodetectors by 2 to 8 orders in transient photocurrent. This optoelectronic performance is attributed to the superior advantages of MAG (~40% of light absorption, ~23 ps of carrier relaxation time, and high quasi-equilibrated hot-carrier-multiplication gain), atomic-scale contact interface of MAG and silicon, and impact-ionization avalanche gain (~100 times) from silicon. The MAG provides a long-range platform to understand the hot-carrier dynamics in stacked 2D materials, leading to next-generation broadband silicon-based image sensors.

Atomic-Scale Measurement of Structure and Chemistry of a Single-Unit-Cell Layer of LaAlO3 Embedded in SrTiO3

2013 ◽  
Vol 19 (2) ◽  
pp. 310-318 ◽  
Author(s):  
Chun-Lin Jia ◽  
Juri Barthel ◽  
Felix Gunkel ◽  
Regina Dittmann ◽  
Susanne Hoffmann-Eifert ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Materials Science ◽  
Single Layer ◽  
High Resolution Electron Microscopy ◽  
Unit Cell ◽  
Atomic Scale ◽  
Chemical Information ◽  
Nominal Thickness ◽  
Specimen Area

AbstractA single layer of LaAlO3 with a nominal thickness of one unit cell, which is sandwiched between a SrTiO3 substrate and a SrTiO3 capping layer, is quantitatively investigated by high-resolution transmission electron microscopy. By the use of an aberration-corrected electron microscope and by employing sophisticated numerical image simulation procedures, significant progress is made in two aspects. First, the structural as well as the chemical features of the interface are determined simultaneously on an atomic scale from the same specimen area. Second, the evaluation of the structural and chemical data is carried out in a fully quantitative way on the basis of the absolute image contrast, which has not been achieved so far in materials science investigations using high-resolution electron microscopy. Considering the strong influence of even subtle structural details on the electronic properties of interfaces in oxide materials, a fully quantitative interface analysis, which makes positional data available with picometer precision together with the related chemical information, can contribute to a better understanding of the functionality of such interfaces.

Influence of atomic-scale defect on thermal conductivity of single-layer MoS2 sheet

2020 ◽  
Vol 831 ◽  
pp. 154875 ◽  
Author(s):  
Dongsheng Chen ◽  
Haifeng Chen ◽  
Shiqian Hu ◽  
Hang Guo ◽  
Swellam W. Sharshir ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Single Layer ◽  
Atomic Scale
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