scholarly journals Differentiation between Shallow and Deep Charge Trap States on Single Poly(3-hexylthiophene) Chains through Fluorescence Photon Statistics

ChemPhysChem ◽  
2015 ◽  
Vol 16 (17) ◽  
pp. 3578-3583 ◽  
Author(s):  
Kristin S. Grußmayer ◽  
Florian Steiner ◽  
John M. Lupton ◽  
Dirk-Peter Herten ◽  
Jan Vogelsang
Keyword(s):  
Photon Statistics ◽  
Trap States ◽  
Charge Trap ◽  
Fluorescence Photon

Inside Back Cover: Differentiation between Shallow and Deep Charge Trap States on Single Poly(3-hexylthiophene) Chains through Fluorescence Photon Statistics (ChemPhysChem 17/2015)

ChemPhysChem ◽  
2015 ◽  
Vol 16 (17) ◽  
pp. 3737-3737
Author(s):  
Kristin S. Grußmayer ◽  
Florian Steiner ◽  
John M. Lupton ◽  
Dirk-Peter Herten ◽  
Jan Vogelsang
Keyword(s):  
Photon Statistics ◽  
Trap States ◽  
Charge Trap ◽  
Back Cover ◽  
Fluorescence Photon

Quantifying the Role of Electronic Charge Trap States on Imprint Behavior in Ferroelectric Poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) Thin Films

2004 ◽  
Vol 830 ◽  
Author(s):  
Connie Lew ◽  
Michael O. Thompson
Keyword(s):  
Thin Films ◽  
Vinylidene Fluoride ◽  
Time Frame ◽  
Temperature Cycling ◽  
Electronic Charge ◽  
Trap States ◽  
Charge Trap ◽  
Si Substrates ◽  
Heating And Cooling ◽  
Poly Vinylidene Fluoride

ABSTRACTPoly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) ferroelectric thin films are a potentially promising material for sensors or non-volatile memories. Imprint, the time-dependent resistance to polarization reversal, is a key material property that limits applications and is poorly understood. Based on experimental time and temperature dependences, we propose and investigate the link between imprint and charge trap states. A novel fast-ramp thermally stimulated current (TSC) measurement was developed to quantify and characterize the traps in an appropriate time-frame.Thin films of P(VDF-TrFE) on oxidized Si substrates were characterized following controlled initialization, fatigue, polarization, and imprint. Trap states were thermally filled/emptied by temperature cycling between 20–100 °C, using heating and cooling rates between 1 and 5 °C/s. Dynamics of this fast-ramp TSC indicate the presence of not only trap states, but also reversible and non-reversible charge accumulation. The presence of electrically active traps were verified by measurements over 1–10 s imprint times. Trapped charge directly correlated with the log of the imprint time, with a rate of ∼0.12 /μC/cm2/decade.

Trap-states in monodisperse formamidinium tin iodide nanocrystals

2020 ◽  
Author(s):  
Dmitry Dirin ◽  
Anna Vivani ◽  
Maryna Bodnarchuk ◽  
Ihor Cherniukh ◽  
Antonietta Guagliardi ◽  
...  
Keyword(s):  
Trap States ◽  
Tin Iodide

Non-Visible Defect Analysis of OTP Device

2011 ◽  
Author(s):  
C.Q. Chen ◽  
G.B. Ang ◽  
Z.X. Xing ◽  
Y.N. Hua ◽  
Z.Q. Mo ◽  
...  
Keyword(s):  
Trap Center ◽  
Data Retention ◽  
Auger Analysis ◽  
Cross Sectional ◽  
Critical Dimensions ◽  
Charge Trap ◽  
Root Cause ◽  
Transmission Electron ◽  
Electrical Analysis ◽  
Visible Defect

Abstract Several product lots were found to suffer from data retention failures in OTP (one time program) devices. PFA (physical failure analysis) was performed on these devices, but nothing abnormal was observed. Cross-sectional TEM (transmission electron microscopy) revealed no physical defects or abnormal CDs (critical dimensions). In order to isolate the failed layer or location, electrical analysis was conducted. Several electrical simulation experiments, designed to test the data retention properties of OTP devices, were preformed. Meilke's method [1] was also used to differentiate between mobile ion contamination and charge trap centers. Besides Meilke's method, a new electrical analysis method was used to verify the analysis results. The results of our analysis suggests that SiN charge trap centers are the root cause for the data retention failures, and the ratio of Si/N is the key to charge trap center formation. Auger analysis was used to physically check the Si/N ratio of OTP devices. The results support our hypothesis. Subsequent DOE (Design Of Experiment) experiments also confirm our analysis results. Key Words: OTP, data retention, Non-visible defect, AFP, charge trap center, mobile ion.

Dynamics of an M-Level Atom Interacting with Cavity Fields: Properties of Photon Statistics

1989 ◽  
Author(s):  
Fu-Li Li ◽  
Xiao-Shen Li ◽  
D. L. Lin ◽  
Thomas F. George
Keyword(s):  
Photon Statistics ◽  
Level Atom
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