Surface-State-Mediated Charge-Transfer Dynamics in CdTe/CdSe Core-Shell Quantum Dots

ChemPhysChem ◽  
2011 ◽  
Vol 12 (9) ◽  
pp. 1729-1735 ◽  
Author(s):  
Sachin Rawalekar ◽  
Sreejith Kaniyankandy ◽  
Sandeep Verma ◽  
Hirendra N. Ghosh
Keyword(s):  
Quantum Dots ◽  
Charge Transfer ◽  
Surface State ◽  
Core Shell ◽  
Cdse Core ◽  
Charge Transfer Dynamics

Charge Transfer Dynamics and Auger Recombination of CdTe/CdS Core/Shell Quantum Dots

2015 ◽  
Vol 119 (31) ◽  
pp. 17971-17978 ◽  
Author(s):  
Li Wang ◽  
Yumei Tian ◽  
Tomoki Okuhata ◽  
Naoto Tamai
Keyword(s):  
Quantum Dots ◽  
Charge Transfer ◽  
Auger Recombination ◽  
Core Shell ◽  
Charge Transfer Dynamics

Resistive Switching in CdTe/CdSe Core–Shell Quantum Dots Embedded Chitosan-Based Memory Devices

2021 ◽  
Author(s):  
Zolile Wiseman Dlamini ◽  
Sreedevi Vallabhapurapu ◽  
Olamide Abiodun Daramola ◽  
Potlaki Foster Tseki ◽  
Rui Werner Macedo Krause ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Resistive Switching ◽  
Core Shell ◽  
Cdse Core ◽  
Active Layers ◽  
Ag Electrodes ◽  
Exponential Decrease ◽  
Conductive Bridge ◽  
Bipolar Memory ◽  
State Resistance

In this paper, we report on the resistive switching (RS) and conduction mechanisms in devices consisting of CdTe/CdSe core–shell quantum dots embedded chitosan composites active layer. Two devices with active layers sandwiched between (1) Al and Ag, and (2) ITO and Ag electrodes were studied. Both devices exhibited bipolar memory behavior with [Formula: see text] V and [Formula: see text][Formula: see text]V, for the Al-based device, while [Formula: see text] V and [Formula: see text][Formula: see text]V were observed for the ITO-based device, enabling both devices to be operated at low powers. However, the switching mechanisms of both devices were different, i.e., RS in Al device was attributed to conductive bridge mechanism, while space-charge-limited driven conduction filament attributed the switching mechanism of the ITO device. Additionally, the Al-based device showed long retention ([Formula: see text][Formula: see text]s) and a reasonable large ([Formula: see text]) ON/OFF ratio. Additionally, for this device, we also observed sweeping cycle-induced reversal of voltage polarity of the [Formula: see text] and [Formula: see text]. In contrast, we observed that increasing sweeping cycles resulted in an exponential decrease of the OFF-state resistance of the ITO-based device.

Photoluminescence properties of CdTe∕CdSe core-shell type-II quantum dots

2006 ◽  
Vol 99 (12) ◽  
pp. 123521 ◽  
Author(s):  
C. H. Wang ◽  
T. T. Chen ◽  
K. W. Tan ◽  
Y. F. Chen ◽  
C. T. Cheng ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Core Shell ◽  
Type Ii ◽  
Photoluminescence Properties ◽  
Cdse Core ◽  
Shell Type

Micro-Photoluminescence Study of Bio-conjugated CdSe/ZnS Nanocrystals

2013 ◽  
Vol 1617 ◽  
pp. 157-162
Author(s):  
L. Borkovska ◽  
N. Korsunska ◽  
T. Stara ◽  
O. Kolomys ◽  
V. Strelchuk ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Thermal Annealing ◽  
Interleukin 10 ◽  
Half Width ◽  
Core Shell ◽  
Cdse Core ◽  
Photoluminescence Study ◽  
Pl Spectra ◽  
Band Position ◽  
Zns Nanocrystals

ABSTRACTThe effect of bio-conjugation of CdSe/ZnS core-shell quantum dots (QDs) with Interleukin 10 (IL-10) antibodies on the aging of photoluminescence (PL) spectra of the QDs was investigated. The aging occurred upon storage of QDs for about 2 years or thermal annealing at 190 oC for up to 12 hours at atmospheric ambience and consisted in “blue” shifting the PL band position, increasing a PL band half-width and decreasing the PL intensity. The bio-conjugation is found to promote PL aging. The aging upon storage is attributed to the oxidation that decreases the QD core dimension, while the aging upon thermal annealing can be due to both oxidation and alloying of CdSe core and ZnS shell.

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