Hydrodynamic Limit and Viscosity Solutions for a Two-Dimensional Growth Process in the Anisotropic KPZ Class

2018 ◽  
Vol 72 (3) ◽  
pp. 620-666
Author(s):  
Martin Legras ◽  
Fabio Lucio Toninelli
Keyword(s):  
Viscosity Solutions ◽  
Growth Process ◽  
Hydrodynamic Limit ◽  
Two Dimensional ◽  
Kpz Class ◽  
Dimensional Growth

Growth Process of Si and GaAs in the Heterostructure GaAs/Si/GaAs(100).

1991 ◽  
Vol 237 ◽  
Author(s):  
M. Lopez ◽  
Y. Takano ◽  
K. Pak ◽  
H. Yonezu
Keyword(s):  
Growth Process ◽  
Three Dimensional ◽  
High Energy ◽  
Two Dimensional ◽  
Spot Intensity ◽  
Interlayer Thickness ◽  
High Energy Electron ◽  
Initial Stage ◽  
Dimensional Growth ◽  
Si Films

ABSTRACTThe growth mode of Si on GaAs(100) substrates and that of GaAs on very thin (1/4 ∼ 3 ML) Si films grown pseudomorphically on GaAs was investigated by observing the behavior of the reflection-high energy electron diffraction (RHEED) specular spot intensity. From the presence of RHEED oscillations during the initial stage of the growth of Si on GaAs we infer a two-dimensional growth with nucleation on the terraces up to a thickness of 3 ML. During the posterior growth of GaAs on the pseudomorphic Si films, a tendency towards three dimensional growth was observed. This tendency increased with the Si interlayer thickness. The causes of the formation of these islands are discussed.

RETRACTED: High quality N-polar GaN two-dimensional growth on c-plane sapphire by metalorganic vapor phase epitaxy

2013 ◽  
Vol 366 ◽  
pp. 35-38 ◽  
Author(s):  
Yuantao Zhang ◽  
Xin Dong ◽  
Guoxing Li ◽  
Wancheng Li ◽  
Baolin Zhang ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Two Dimensional ◽  
High Quality ◽  
Dimensional Growth

GaSb layers with low defect density deposited on (001) GaAs substrate in two-dimensional growth mode using molecular beam epitaxy

2019 ◽  
Vol 19 (4) ◽  
pp. 542-547
Author(s):  
Agata Jasik ◽  
Iwona Sankowska ◽  
Andrzej Wawro ◽  
Jacek Ratajczak ◽  
Dariusz Smoczyński ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Gaas Substrate ◽  
Molecular Beam ◽  
Defect Density ◽  
Growth Mode ◽  
Two Dimensional ◽  
Dimensional Growth

scholarly journals Dielectric Function of AlN Grown on Si (111) by MBE

1999 ◽  
Vol 572 ◽  
Author(s):  
Stefan Zollner ◽  
Atul Konkar ◽  
R. B. Gregory ◽  
S. R. Wilson ◽  
S. A. Nikishin ◽  
...  
Keyword(s):  
Molecular Beam ◽  
Buffer Layers ◽  
Two Dimensional ◽  
X Ray Diffraction ◽  
Growth Morphology ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Dimensional Growth ◽  
Peak Widths

ABSTRACTWe measured the ellipsometric response from 0.7–5.4 eV of c-axis oriented AlN on Si (111) grown by molecular beam epitaxy. We determine the film thicknesses and find that for our AlN the refractive index is about 5–10% lower than in bulk AlN single crystals. Most likely, this discrepancy is due to a low film density (compared to bulk AlN), based on measurements using Rutherford backscattering. The films were also characterized using atomic force microscopy and x-ray diffraction to study the growth morphology. We find that AlN can be grown on Si (111) without buffer layers resulting in truely two-dimensional growth, low surface roughness, and relatively narrow x-ray peak widths.

Stick-slip propagation velocity and seismic source mechanism

1972 ◽  
Vol 62 (6) ◽  
pp. 1621-1628 ◽  
Author(s):  
Francis T. Wu ◽  
K. C. Thomson ◽  
H. Kuenzler
Keyword(s):  
Propagation Velocity ◽  
Growth Process ◽  
Seismic Source ◽  
Two Dimensional ◽  
Dimensional Model ◽  
Stick Slip ◽  
Two Dimensional Model ◽  
Seismic Source Mechanism ◽  
Fault Growth ◽  
Limiting Value

abstract Earthquakes, at least the shallow ones, take place along pre-existing fault planes. The controlling factor is, therefore, friction, and the fault growth process resembles that of stick-slip propagation. We have simulated this process in a two-dimensional model. It is found that propagation velocity can range from sub-shear to 1.1 Vs (the latter is not a limiting value).

Crystallization Time Dependence of Nanohybrid Shish-Kebab Structure in HDPE/PA66 Nanofibers Composites via Solution Crystallization

2011 ◽  
Vol 110-116 ◽  
pp. 3786-3790
Author(s):  
Wen Juan Han ◽  
Guo Qiang Zheng ◽  
Yan Yan Liang ◽  
Chun Tai Liu ◽  
Chang Yu Shen
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Time Dependence ◽  
Isothermal Crystallization ◽  
Three Dimensional ◽  
Crystallization Time ◽  
Two Dimensional ◽  
Solution Crystallization ◽  
Dimensional Growth ◽  
Scanning Electron

In this study, PA66 nanofibers were successfully solution electrospun. The crystalline morphological features of HDPE solution induced by nanofibers were investigated by scanning electron microscopy (SEM). Nanohybrid shish-kebab (NHSK) can be formed in HDPE solution via isothermal crystallization, in which PA66 nanofibers serve as shish and HDPE lamellae act as kebabs surrounding the nanofibers periodically. Additionally, crystallization time has significant effect on the structure of HDPE kebab in NHSK, i.e., as crystallization time increases, the size of the kebab increases and the crystals decorated on PA66 nanofibers exhibit a three-dimensional growth (i.e., aggregate of crystallites) rather than a two-dimensional one (i.e., disc-like lamellae normal to the axis of nanofiber).

Model electrode study of Ru@Pt core-shell nanosheet catalysts: Pure two-dimensional growth via surface limited redox replacement

2018 ◽  
Vol 283 ◽  
pp. 826-833 ◽  
Author(s):  
Jeerapat Nutariya ◽  
Eri Kuroiwa ◽  
Daisuke Takimoto ◽  
Zhongrong Shen ◽  
Dai Mochizuki ◽  
...  
Keyword(s):  
Core Shell ◽  
Two Dimensional ◽  
Dimensional Growth
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