Chiroptical properties and racemization behavior of highly distorted donor-acceptor tetracyanoanthraquinodimethane with interconvertible planar chirality

Chirality ◽  
2008 ◽  
Vol 20 (3-4) ◽  
pp. 278-281 ◽  
Author(s):  
Hideaki Saito ◽  
Tadashi Mori ◽  
Yumi Origane ◽  
Takehiko Wada ◽  
Yoshihisa Inoue
Keyword(s):  
Chiroptical Properties ◽  
Planar Chirality ◽  
Donor Acceptor

A fluorescent bicyclic calix[4]arene–oxacyclophane with planar chirality: resolution, chiroptical properties, and absolute configuration

2014 ◽  
Vol 25 (6-7) ◽  
pp. 547-553 ◽  
Author(s):  
José V. Prata ◽  
Alexandra I. Costa ◽  
Gennaro Pescitelli ◽  
Carlos M. Teixeira
Keyword(s):  
Absolute Configuration ◽  
Chiroptical Properties ◽  
Planar Chirality

scholarly journals Pressure-driven, solvation-directed planar chirality switching of cyclophano-pillar[5]arenes (molecular universal joints)

2021 ◽  
Vol 12 (12) ◽  
pp. 4361-4366
Author(s):  
Jiabin Yao ◽  
Hiroaki Mizuno ◽  
Chao Xiao ◽  
Wanhua Wu ◽  
Yoshihisa Inoue ◽  
...  
Keyword(s):  
Chiroptical Properties ◽  
Planar Chirality ◽  
Universal Joints ◽  
Pressure Driven

Pressure switches the in/out conformation of cyclophano-pillararenes with accompanying inversion of the chiroptical properties.

Evidence of a donor-acceptor type transition in CuGaSe2

1980 ◽  
Vol 41 (7) ◽  
pp. 707-712 ◽  
Author(s):  
A. Poure ◽  
G. Aguero ◽  
G. Masse ◽  
J.P. Aicardi
Keyword(s):  
Type Transition ◽  
Donor Acceptor

Photoactive donor-acceptor thin films as prospective materials for evaporated bulk heterojunctions of molecular semiconductors

2008 ◽  
Author(s):  
Derck Schlettwein ◽  
Robin Knecht ◽  
Dominik Klaus ◽  
Christopher Keil ◽  
Günter Schnurpfeil
Keyword(s):  
Thin Films ◽  
Bulk Heterojunctions ◽  
Donor Acceptor ◽  
Molecular Semiconductors

A New Deep Acceptor in Epitaxial Cubic SiC

1989 ◽  
Vol 162 ◽  
Author(s):  
J. A. Freitas ◽  
S. G. Bishop
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Excitation Intensity ◽  
Acceptor Pair ◽  
Deep Acceptor ◽  
Intensity Dependence ◽  
Pl Spectra ◽  
Donor Acceptor ◽  
Donor Acceptor Pair

ABSTRACTThe temperature and excitation intensity dependence of photoluminescence (PL) spectra have been studied in thin films of SiC grown by chemical vapor deposition on Si (100) substrates. The low power PL spectra from all samples exhibited a donor-acceptor pair PL band which involves a previously undetected deep acceptor whose binding energy is approximately 470 meV. This deep acceptor is found in every sample studied independent of growth reactor, suggesting the possibility that this background acceptor is at least partially responsible for the high compensation observed in Hall effect studies of undoped films of cubic SiC.

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