ChemInform Abstract: Recent Progress in Low-Voltage Cathodoluminescent Materials: Synthesis, Improvement and Emission Properties

ChemInform ◽  
2014 ◽  
Vol 45 (50) ◽  
pp. no-no ◽  
Author(s):  
Guogang Li ◽  
Jun Lin
2014 ◽  
Vol 43 (20) ◽  
pp. 7099-7131 ◽  
Author(s):  
Guogang Li ◽  
Jun Lin

This review is devoted to the recent progress in the synthesis and improvement of low-voltage cathodoluminescent materials for field emission displays.


1993 ◽  
Vol 316 ◽  
Author(s):  
H. H. Hosack

Silicon-On-Insulator (SOI) technology [1-4] has been shown to have significant performance and fabrication advantages over conventional bulk processing for a wide variety of large scale CMOS IC applications. Advantages in radiation environments has generated significant interest in this technology from military and space science communities [5,6]. Possible advantages of SOI technology for low power, low voltage and high performance circuit applications is under serious consideration by several commercial IC manufacturers [7,8].


2018 ◽  
Vol 2 (9) ◽  
pp. 1595-1608 ◽  
Author(s):  
Juan Zhao ◽  
Zhihe Chi ◽  
Zhiyong Yang ◽  
Zhu Mao ◽  
Yi Zhang ◽  
...  

A panoramic review of the recent advances in the mechanofluorochromism of distyrylanthracene derivatives with aggregation-induced emission properties.


2002 ◽  
Vol 12 (02) ◽  
pp. 315-323 ◽  
Author(s):  
HIROSHI ISHIWARA

Recent progress of ferroelectric random access memories (FeRAMs) is reviewed. First, novel ferroelectric materials, which are suitable for both low temperature crystallization and low voltage operation are introduced. Then, various cell structures in FeRAMs are discussed, in which particular attention is paid to non-destructive-readout-type cells such as a 1T-type cell composed of a single ferroelectric-gate field effect transistor. Finally, a novel 1T2C-type non-destructive-readout cell with good data retention characteristic is introduced and its basic operation is presented.


2001 ◽  
Vol 685 ◽  
Author(s):  
A.G Chakhovskoi ◽  
N.N Chubun ◽  
C.E. Hunt ◽  
A.N Obraztsov ◽  
A.P. Volkov

AbstractPlanar field-emission cathode structures consisting of nanostructured carbon flakes have been investigated as an electron source for flat panel display application.Layers of nanoflakes were grown on silicon and molybdenum substrates using a high- temperature pyrolitic plasma-assisted CVD method. The result is a vertically oriented nanocluster layer of 1-2 micrometer height chemically bonded with the substrates. Additional orientation of the flakes, occurring during the first activation of the cathodes, was observed.Field emission properties of the emitters were studied in a vacuum chamber and in sealed flat-panel prototype devices with non-patterned low-voltage phosphor screens. Emitters with an area up to 1 square inch were tested under DC currents up to 100 microamps in diode mode. Anode bias up to 1.5 kV was applied. Current fluctuations of 1-2% were achieved using loading resistor.


2021 ◽  
Vol 8 (3) ◽  
pp. 031304
Author(s):  
Jingyu Wu ◽  
Sagar Yadavali ◽  
Daeyeon Lee ◽  
David A. Issadore

2000 ◽  
Vol 177 ◽  
pp. 229-234
Author(s):  
Michael Kramer ◽  
Kiriaki M. Xilouris

AbstractWe report the most recent progress in understanding the emission properties of millisecond pulsars.


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