Antimony and Antimony?Tin Doped Indium Oxide, IAO and IATO: Promising Transparent Conductors.

ChemInform ◽  
2005 ◽  
Vol 36 (2) ◽  
Author(s):  
J. Choisnet ◽  
L. Bizo ◽  
R. Retoux ◽  
B. Raveau
Keyword(s):  
Indium Oxide ◽  
Transparent Conductors

Antimony and antimony–tin doped indium oxide, IAO and IATO: promising transparent conductors

2004 ◽  
Vol 6 (10) ◽  
pp. 1121-1123 ◽  
Author(s):  
J. Choisnet ◽  
L. Bizo ◽  
R. Retoux ◽  
B. Raveau
Keyword(s):  
Indium Oxide ◽  
Transparent Conductors

scholarly journals Contrasting the grain boundary-affected performance of zinc and indium oxide transparent conductors

2016 ◽  
Vol 28 (22) ◽  
pp. 224003 ◽  
Author(s):  
A T Vai ◽  
N Rashidi ◽  
Y Fang ◽  
V L Kuznetsov ◽  
P P Edwards
Keyword(s):  
Grain Boundary ◽  
Indium Oxide ◽  
Transparent Conductors

Interstitial Oxygen in Tin-Doped Indium Oxide Transparent Conductors

2006 ◽  
Vol 89 (2) ◽  
pp. 616-619 ◽  
Author(s):  
Oliver Warschkow ◽  
Lj. Miljacic ◽  
D. E. Ellis ◽  
G. B. Gonzalez ◽  
T. O. Mason
Keyword(s):  
Indium Oxide ◽  
Transparent Conductors ◽  
Interstitial Oxygen

scholarly journals Resonant doping for high mobility transparent conductors: the case of Mo-doped In2O3

2020 ◽  
Vol 7 (1) ◽  
pp. 236-243 ◽  
Author(s):  
Jack E. N. Swallow ◽  
Benjamin A. D. Williamson ◽  
Sanjayan Sathasivam ◽  
Max Birkett ◽  
Thomas J. Featherstone ◽  
...  
Keyword(s):  
Conduction Band ◽  
Indium Oxide ◽  
High Mobility ◽  
Transparent Conductors ◽  
Transparent Conducting

Superior transparent conducting properties of indium oxide realised by molybdenum donors resonant in the conduction band, avoiding detrimental effects of tin doping.

Optical Indices of Tin-Doped Indium Oxide and Tungsten Oxide Electrochromic Coatings

1995 ◽  
Vol 403 ◽  
Author(s):  
K. Von Rottkay ◽  
M. Rubin ◽  
N. Ozer
Keyword(s):  
Tungsten Oxide ◽  
Indium Oxide ◽  
Optical Constants ◽  
Optical Design ◽  
Transparent Conductors ◽  
Spectral Ellipsometry ◽  
Lorentz Oscillator ◽  
Near Ultraviolet ◽  
Electrochromic Material

AbstractThin films of tin-doped indium oxide are widely used for transparent conductors. One application of ln203:Sn (ITO) is transparent contacts for electrochromic electrodes. Optical design of electrochromic devices requires knowledge of the optical constants for each layer from the near ultraviolet and visible to the mid infrared. Determination of the optical constants of the electrochromic layer cannot be made in isolation; a complete device or at least a half-cell including a layer of ITO is required to change the optical state of the electrochromic material. Measurements on ITO were made using variable-angle spectral ellipsometry, and spectral transmittance and reflectance. A series of structural models were fit to this data. The problem is complicated because of inhomogeneity in the films, variability in the manufacturing process, and sensitivity to environmental conditions. The spectral dependency was modeled by a single Lorentz oscillator and a Drude free-electron component. This data was then used as the basis for a model to extract the optical constants for a tungsten oxide electrochromic film.

Effects of dopant concentration on the microstructure of tin- doped indium oxide thin films

1990 ◽  
Vol 48 (4) ◽  
pp. 716-717
Author(s):  
I. A. Rauf
Keyword(s):  
Thin Films ◽  
Indium Oxide ◽  
Ionic Radius ◽  
Free Carrier ◽  
Electron Gun ◽  
Periodic Lattice ◽  
Oxide Thin Films ◽  
Transmission Electron ◽  
The Difference ◽  
Dopant Atoms

To understand the electronic conduction mechanism in Sn-doped indium oxide thin films, it is important to study the effect of dopant atoms on the neighbouring indium oxide lattice. Ideally Sn is a substitutional dopant at random indium sites. The difference in valence (Sn4+ replaces In3+) requires that an extra electron is donated to the lattice and thus contributes to the free carrier density. But since Sn is an adjacent member of the same row in the periodic table, the difference in the ionic radius (In3+: 0.218 nm; Sn4+: 0.205 nm) will introduce a strain in the indium oxide lattice. Free carrier electron waves will no longer see a perfect periodic lattice and will be scattered, resulting in the reduction of free carrier mobility, which will lower the electrical conductivity (an undesirable effect in most applications).One of the main objectives of the present investigation is to understand the effects of the strain (produced by difference in the ionic radius) on the microstructure of the indium oxide lattice when the doping level is increased to give high carrier densities. Sn-doped indium oxide thin films were prepared with four different concentrations: 9, 10, 11 and 12 mol. % of SnO2 in the starting material. All the samples were prepared at an oxygen partial pressure of 0.067 Pa and a substrate temperature of 250°C using an Edwards 306 coating unit with an electron gun attachment for heating the crucible. These deposition conditions have been found to give optimum electrical properties in Sn-doped indium oxide films. A JEOL 2000EX transmission electron microscope was used to investigate the specimen microstructure.

Defect structure examination of Sn-doped indium oxide (ITO)

2007 ◽  
Vol 2007 (suppl_26) ◽  
pp. 489-494 ◽  
Author(s):  
J. Popović ◽  
E. Tkalčec ◽  
B. Gržeta ◽  
C. Goebbert ◽  
V. Ksenofontov ◽  
...  
Keyword(s):  
Indium Oxide ◽  
Defect Structure

A novel heterostructure coupling MOF-derived fluffy porous indium oxide with g-C3N4 for enhanced photocatalytic activity

2021 ◽  
Vol 133 ◽  
pp. 111078 ◽  
Author(s):  
Xing Liu ◽  
Lu Zhang ◽  
Yudong Li ◽  
Xianzhu Xu ◽  
Yunchen Du ◽  
...  
Keyword(s):  
Photocatalytic Activity ◽  
Indium Oxide
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