Optical Indices of Tin-Doped Indium Oxide and Tungsten Oxide Electrochromic Coatings

1995 ◽  
Vol 403 ◽  
Author(s):  
K. Von Rottkay ◽  
M. Rubin ◽  
N. Ozer

AbstractThin films of tin-doped indium oxide are widely used for transparent conductors. One application of ln203:Sn (ITO) is transparent contacts for electrochromic electrodes. Optical design of electrochromic devices requires knowledge of the optical constants for each layer from the near ultraviolet and visible to the mid infrared. Determination of the optical constants of the electrochromic layer cannot be made in isolation; a complete device or at least a half-cell including a layer of ITO is required to change the optical state of the electrochromic material. Measurements on ITO were made using variable-angle spectral ellipsometry, and spectral transmittance and reflectance. A series of structural models were fit to this data. The problem is complicated because of inhomogeneity in the films, variability in the manufacturing process, and sensitivity to environmental conditions. The spectral dependency was modeled by a single Lorentz oscillator and a Drude free-electron component. This data was then used as the basis for a model to extract the optical constants for a tungsten oxide electrochromic film.

2011 ◽  
Vol 8 ◽  
pp. 223-227 ◽  
Author(s):  
R. Yusoh ◽  
M. Horprathum ◽  
P. Eiamchai ◽  
S. Chanyawadee ◽  
K. Aiempanakit

2007 ◽  
Vol 515 (18) ◽  
pp. 7387-7392 ◽  
Author(s):  
Fachun Lai ◽  
Limei Lin ◽  
Rongquan Gai ◽  
Yongzhong Lin ◽  
Zhigao Huang
Keyword(s):  

1991 ◽  
Vol 222 ◽  
Author(s):  
B. Johs ◽  
J. L. Edwards ◽  
K. T. Shiralagi ◽  
R. Droopad ◽  
K. Y. Choi ◽  
...  

ABSTRACTA modular spectroscopic ellipsometer, capable of both in-situ and ex-situ operation, has been used to measure important growth parameters of GaAs/AIGaAs structures. The ex-situ measurements provided layer thicknesses and compositions of the grown structures. In-situ ellipsometric measurements allowed the determination of growth rates, layer thicknesses, and high temperature optical constants. By performing a regression analysis of the in-situ data in real-time, the thickness and composition of an AIGaAs layer were extracted during the MBE growth of the structure.


2004 ◽  
Vol 6 (10) ◽  
pp. 1121-1123 ◽  
Author(s):  
J. Choisnet ◽  
L. Bizo ◽  
R. Retoux ◽  
B. Raveau

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