Surface Science Investigations of Intercalation Reactions with Layered Metal Dichalcogenides

ChemInform ◽  
2003 ◽  
Vol 34 (29) ◽  
Author(s):  
W. Jaegermann ◽  
D. Tonti
Keyword(s):  
Surface Science ◽  
Metal Dichalcogenides ◽  
Science Investigations

Electrochemical and surface science investigations of PtCr alloy electrodes

1987 ◽  
Vol 220 (2) ◽  
pp. 269-285 ◽  
Author(s):  
M.T. Paffett ◽  
K.A. Daube ◽  
S. Gottesfeld ◽  
C.T. Campbell
Keyword(s):  
Surface Science ◽  
Science Investigations

Surface Science Investigations of Thin Metal Films on Metal and Metal Oxide Supports

1986 ◽  
Vol 83 ◽  
Author(s):  
J. M. White
Keyword(s):  
Thin Film ◽  
Surface Science ◽  
Dissociative Adsorption ◽  
Metal Films ◽  
Model Systems ◽  
Oxide Supports ◽  
Thin Film Model ◽  
No Chemisorption ◽  
Science Investigations ◽  
Significant Chemical

ABSTRACTChemisorption and catalysis on overlayer metals and metal oxides is rich and complex. Thin film model systems, suitable for UHV surface science, are attractive candidates for studying the fundamental interactions involved. In this paper, we discuss three examples: (1) O2 and N2O dissociative adsorption on Cu-covered Ru(0001), (2) molecular CO chemisorption on K-covered Ag(111), and (3) CO, H2 and NO chemisorption on clean and TiOx covered Pt and Rh. In each of these cases, evidence is presented for significant chemical interactions between the two substrate materials.

scholarly journals Surface science investigations of the role of CO 2 in astrophysical ices

2013 ◽  
Vol 371 (1994) ◽  
pp. 20110578 ◽  
Author(s):  
John L. Edridge ◽  
Kati Freimann ◽  
Daren J. Burke ◽  
Wendy A. Brown
Keyword(s):  
Surface Science ◽  
Amorphous Solid ◽  
Temperature Programmed Desorption ◽  
Surface Data ◽  
Reflection Absorption Infrared Spectroscopy ◽  
Temperature Programmed ◽  
Astrophysical Ices ◽  
Dust Grain ◽  
Science Investigations

We have recorded reflection–absorption infrared spectroscopy (RAIRS) and temperature-programmed desorption (TPD) data for a range of CO 2 -bearing model astrophysical ices adsorbed on a graphitic dust grain analogue surface. Data have been recorded for pure CO 2 , for CO 2 adsorbed on top of amorphous solid water, for mixed CO 2 :H 2 O ices and for CO 2 adsorbed on top of a mixed CH 3 OH:H 2 O ice. For the TPD data, kinetic parameters for desorption have been determined, and the trapping behaviour of the CO 2 in the H 2 O (CH 3 OH) ice has been determined. Data of these types are important as they can be used to model desorption in a range of astrophysical environments. RAIR spectra have also shown the interaction of the CO 2 with H 2 O and CH 3 OH and can be used to compare with astronomical observations, allowing the accurate assignment of spectra.

Surface Science Investigations of Oxidative Chemistry on Gold

2009 ◽  
Vol 42 (8) ◽  
pp. 1063-1073 ◽  
Author(s):  
Jinlong Gong ◽  
C. Buddie Mullins
Keyword(s):  
Surface Science ◽  
Science Investigations

ChemInform Abstract: Electrochemical and Surface Science Investigations of PtCr Alloy Electrodes.

ChemInform ◽  
1987 ◽  
Vol 18 (26) ◽  
Author(s):  
M. T. PAFFETT ◽  
K. A. DAUBE ◽  
S. GOTTESFELD ◽  
C. T. CAMPBELL
Keyword(s):  
Surface Science ◽  
Science Investigations

Microstructures of cavity surfaces in silicon

1992 ◽  
Vol 50 (1) ◽  
pp. 334-335
Author(s):  
D.M. Follstaedt ◽  
S. M. Myers ◽  
W. R. Wampler ◽  
H. J. Stein
Keyword(s):  
Surface Science ◽  
Room Temperature ◽  
Materials Science ◽  
Internal Surface ◽  
Wafer Surface ◽  
Internal Cavity ◽  
Porous Structures ◽  
Internal Surface Area ◽  
Science Investigations

Helium is insoluble in most materials and forms “bubbles” when it is ion implanted into them. The microstructures of the cavities formed when Si is implanted with He and annealed are of interest for several basic materials science investigations: luminescence of porous structures, stabilities of atomic surfaces and H attachment to Si bonds on the internal cavity surfaces. Such cavities can allow new “surface-science”-type investigations to be conducted, such as the recent determination of the Si-H bond strength (2.5±0.2 eV). We have used cross-section TEM at 200 kV to characterize the cavities formed when (001) Si is implanted with l×1017 He/cm2, 30 keV, at room temperature and then annealed at 700 or 800 °C. The enhancement of internal surface area relative to the wafer surface is quantified, and faceting of the cavities is used to infer the relative stabilities of Si surfaces.

Sign in / Sign up

Export Citation Format

Share Document