ChemInform Abstract: Monte Carlo Models of the Magnetization Reversal in Thin Films with Strong Perpendicular Anisotropy

ChemInform ◽  
2000 ◽  
Vol 31 (43) ◽  
pp. no-no
Author(s):  
A. Lyberatos
2000 ◽  
Vol 76 (5) ◽  
pp. 619-621 ◽  
Author(s):  
Gottfried Wastlbauer ◽  
George D. Skidmore ◽  
Chris Merton ◽  
Jake Schmidt ◽  
E. Dan Dahlberg ◽  
...  

1995 ◽  
Vol 19 (S_1_MORIS_94) ◽  
pp. S1_79-83 ◽  
Author(s):  
J. FERRE ◽  
V. GROLIER ◽  
A. KIRILYUK ◽  
J.P. JAMET ◽  
D. RENARD

Author(s):  
D. R. Liu ◽  
S. S. Shinozaki ◽  
R. J. Baird

The epitaxially grown (GaAs)Ge thin film has been arousing much interest because it is one of metastable alloys of III-V compound semiconductors with germanium and a possible candidate in optoelectronic applications. It is important to be able to accurately determine the composition of the film, particularly whether or not the GaAs component is in stoichiometry, but x-ray energy dispersive analysis (EDS) cannot meet this need. The thickness of the film is usually about 0.5-1.5 μm. If Kα peaks are used for quantification, the accelerating voltage must be more than 10 kV in order for these peaks to be excited. Under this voltage, the generation depth of x-ray photons approaches 1 μm, as evidenced by a Monte Carlo simulation and actual x-ray intensity measurement as discussed below. If a lower voltage is used to reduce the generation depth, their L peaks have to be used. But these L peaks actually are merged as one big hump simply because the atomic numbers of these three elements are relatively small and close together, and the EDS energy resolution is limited.


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