ChemInform Abstract: Deposition, Annealing and Characterization of High-Dielectric Constant Metal Oxide Films.

ChemInform ◽  
2010 ◽  
Vol 26 (41) ◽  
pp. no-no
Author(s):  
H. TREICHEL ◽  
A. MITWALSKY ◽  
G. TEMPEL ◽  
G. ZORN ◽  
D. A. BOHLING ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Metal Oxide ◽  
High Dielectric Constant ◽  
Oxide Films ◽  
Metal Oxide Films ◽  
High Dielectric

Deposition, annealing and characterisation of high-dielectric-constant metal oxide films

1995 ◽  
Vol 5 (3) ◽  
pp. 163-175 ◽  
Author(s):  
H. Treichel ◽  
A. Mitwalsky ◽  
G. Tempel ◽  
G. Zorn ◽  
D. A. Bohling ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Metal Oxide ◽  
High Dielectric Constant ◽  
Oxide Films ◽  
Metal Oxide Films ◽  
High Dielectric

scholarly journals STRUCTURAL AND ELECTRICAL PROPERTIES OF TANTALUM PENTAOXIDE (Ta2O5) THIN FILMS – A REVIEW

2013 ◽  
Vol 22 ◽  
pp. 564-569
Author(s):  
KANTA RATHEE ◽  
B. P. MALIK
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Electrical Properties ◽  
Metal Oxide ◽  
High Dielectric Constant ◽  
Complementary Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Structural And Electrical Properties ◽  
High Dielectric ◽  
Deposited Films

Down scaling of complementary metal oxide semiconductor transistors has put limitations on silicon dioxide to be used as an effective dielectric. It is necessary to replace the SiO 2 with a physically thicker layer of oxides of high dielectric constant. Thus high k dielectrics are used to suppress the existing challenges for CMOS scaling. Many new oxides are being evaluated as gate dielectrics such as Ta2O5 , HfO2 , ZrO2 , La2O3 , HfO2 , TiO2 , Al2O3 , Y2O3 etc but it was soon found that these oxides in many respects have inferior electronic properties to SiO2 . But the the choice alone of suitable metal oxide with high dielectric constant is not sufficient to overcome the scaling challenges. The various deposition techniques and the conditions under which the thin films are deposited plays important role in deciding the structural and electrical properties of the deposited films. This paper discusses in brief the various deposition conditions which are employed to improve the structural and electrical properties of the deposited films.

Optical properties and band gap characterization of high dielectric constant oxides

2012 ◽  
Vol 520 (14) ◽  
pp. 4532-4535 ◽  
Author(s):  
O. Fursenko ◽  
J. Bauer ◽  
G. Lupina ◽  
P. Dudek ◽  
M. Lukosius ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Optical Properties ◽  
Band Gap ◽  
High Dielectric Constant ◽  
High Dielectric

Pulsed DC Magnetron Sputtered Rutile TiO2 films for next generation DRAM capacitors

2013 ◽  
Vol 1561 ◽  
Author(s):  
M.A Jithin ◽  
Lakshmi Ganapathi Kolla ◽  
Navakanta Bhat ◽  
S. Mohan ◽  
Yuichiro Morozumi ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
High Dielectric Constant ◽  
Low Dielectric Constant ◽  
Si Substrate ◽  
Capacitance Density ◽  
Low Dielectric ◽  
Pulsed Dc ◽  
High Dielectric ◽  
Mim Capacitors

ABSTRACTIn this study, synthesis and characterization of rutile-Titanium dioxide (TiO2) thin films using pulsed DC Magnetron Sputtering at room temperature, along with the fabrication and characterization of MIM capacitors have been discussed. XPS and RBS data show that the films are stoichiometric and have compositional uniformity. The influence of electrode materials on electrical characteristics of the fabricated MIM capacitors has been studied. The Al/TiO2/Al based capacitors show low capacitance density (9 fF/μm2) with low dielectric constant (K=25) and high EOT (3.67 nm) due to low dielectric constant TiO2 phase formation on Al/Si substrate. On the other hand, Ru/TiO2/Ru based capacitors show high capacitance density (49 fF/μm2) with high dielectric constant (K=130) and low EOT (0.7nm) values at high frequency (100 KHz) due to high dielectric constant phase (rutile) formation of TiO2, on Ru/Si substrate. Raman spectra confirm that the films deposited on Ru/Si substrate show the rutile phase.

High-density remote plasma sputtering of high-dielectric-constant amorphous hafnium oxide films

2013 ◽  
Vol 250 (5) ◽  
pp. 957-967 ◽  
Author(s):  
Flora M. Li ◽  
Bernhard C. Bayer ◽  
Stephan Hofmann ◽  
Stuart P. Speakman ◽  
Caterina Ducati ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Hafnium Oxide ◽  
High Dielectric Constant ◽  
Oxide Films ◽  
High Density ◽  
Remote Plasma ◽  
Plasma Sputtering ◽  
High Dielectric

Synthesis and electrochemical characterization of electroactive IoNanofluids with high dielectric constants from hydrated ferrous sulphate

2019 ◽  
Vol 55 (1) ◽  
pp. 83-86 ◽  
Author(s):  
Aswathy Joseph ◽  
Marylin Mary Xavier ◽  
Jacek Fal ◽  
Gaweł Żyła ◽  
Soorya Sasi ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
High Stability ◽  
High Dielectric Constant ◽  
Ferrous Sulphate ◽  
Dielectric Constants ◽  
Microwave Assisted ◽  
Low Viscosity ◽  
One Step ◽  
High Dielectric

An iron oxide based-electroactive IoNanofluid with a high dielectric constant, high stability and low viscosity was synthesized from ferrous sulphate heptahydrate via a facile microwave assisted one-step route in 1-butyl-4-methylpyridinium chloride.

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