ChemInform Abstract: Electrochemical Lithium Intercalation Reaction of Anodic Vanadium Oxide Film.

ChemInform ◽  
2010 ◽  
Vol 26 (22) ◽  
pp. no-no
Author(s):  
J.-S. BAE ◽  
S.-I. PYUN
Keyword(s):  
Oxide Film ◽  
Vanadium Oxide ◽  
Lithium Intercalation ◽  
Intercalation Reaction

Optical Properties of Nano-Structure Tungsten-Doped Vanadium Oxide

2012 ◽  
Author(s):  
W. B. Cai ◽  
F. Wang ◽  
Y. P. Miao ◽  
J. Wei ◽  
K. L. Zhang
Keyword(s):  
Optical Properties ◽  
Transition Temperature ◽  
Oxide Film ◽  
Vanadium Oxide ◽  
High Vacuum ◽  
Infrared Transmission ◽  
Dc Magnetron Sputtering ◽  
Nano Structure ◽  
Before And After ◽  
Deposited Film

Tungsten-doped vanadium oxide has been proved to decrease the transition temperature, which enables vanadium oxide film to be more promising. Besides, the nano-structure can improve the properties of the film when compared with the as-deposited film. In this letter, a nano-structure tungsten-doped vanadium oxide film is proposed. Tungsten-doped vanadium oxide film was deposited on the Si (400) substrate by DC magnetron sputtering. The doping level was controlled by adjusting the sputtering time. Then the as-deposited film was annealed to form a nano-structure film at the temperature of 500 °C for 1 h in high vacuum. The morphology and crystalline structure of such films were characterized by AFM and XRD, respectively. Optical properties of the films were tested by FTIR, mainly comparing the infrared transmission before and after annealing.

Manganese Vanadium Oxide Compounds as Cathodes for Lithium Batteries

2000 ◽  
Vol 658 ◽  
Author(s):  
J. Katana Ngala ◽  
Peter Y. Zavalij ◽  
M. Stanley Whittingham
Keyword(s):  
Vanadium Oxide ◽  
Lithium Batteries ◽  
Manganese Content ◽  
Pure Form ◽  
Lithium Intercalation ◽  
Ammonium Ions ◽  
End Points ◽  
Hydrothermal Technique ◽  
Tetramethyl Ammonium

ABSTRACTA pure form of the compound [(CH3)4N]0.2Mn0.06V2O5+δ•0.2H2O has been synthesized by the hydrothermal technique. A manganese richer compound, [(CH3)4N]0.18Mn0.1V2O5+δ•0.35H2O, has also been synthesized. By comparison to [(CH3)4N]0.17Fe0.1V2O5+δ•0.17H2O, the structure of these compounds consists of double sheets of vanadium oxide with tetramethyl ammonium ions in the interlayer spaces. Both compounds display reversible lithium intercalation with sharp end points. The lithiation capacity is lowered by the increase in manganese content.

Lithium insertion in sputtered vanadium oxide film☆

1992 ◽  
Vol 57 (1-2) ◽  
pp. 41-47 ◽  
Author(s):  
K WEST ◽  
B ZACHAUCHRISTIANSEN ◽  
S SKAARUP ◽  
F POULSEN
Keyword(s):  
Oxide Film ◽  
Vanadium Oxide ◽  
Lithium Insertion

Superconductivity of Layered Perovskite Synthesized by Soft Chemistry

2007 ◽  
Vol 350 ◽  
pp. 163-166
Author(s):  
Takashi Teranishi ◽  
Sachi Takezawa ◽  
Kenji Toda ◽  
Hironori Ishikawa ◽  
Kenji Sato ◽  
...  
Keyword(s):  
Magnetic Susceptibility ◽  
Ion Exchange ◽  
Sodium Azide ◽  
Parent Compound ◽  
Intercalation Compound ◽  
Type Structure ◽  
Lithium Intercalation ◽  
Layered Perovskite ◽  
Soft Chemistry ◽  
Intercalation Reaction

Reduced niobates, MLixCa2Nb3O10 (M = Rb, K and Na) and KNaxCa2Nb3O10 were synthesized by intercalation reaction with n-butyllithium or sodium azide. Ruddlesden-Popper type structure of sodium intercalation compound, KNaCa2Nb3O10, differ from that of the parent compound and lithium intercalation compound, KLiCa2Nb3O10. The magnetic susceptibility measurements showed that the sodium intercalation compound became superconductor with transition temperatures below 3.5 K. New lithium intercalation compound Na0.1Li0.8Ca2.45Nb3O10, for an ion exchange compound, Na0.1Ca2.45Nb3O10, with KCa2Nb3O10 type structure show the diamagnetic signals below 5 K.

The Fabrication of High Resistance-Temperature-Coefficient Vanadium Oxide Film by Magnetron Sputtering Method

2014 ◽  
Vol 609-610 ◽  
pp. 547-551
Author(s):  
Ya Qiao ◽  
Yong Shun Ling ◽  
Yuan Lu ◽  
Hua Yang
Keyword(s):  
Oxide Film ◽  
Magnetron Sputtering ◽  
Vanadium Oxide ◽  
Temperature Coefficient ◽  
Glass Substrates ◽  
Five Factors ◽  
Sputtering Power ◽  
Vanadium Metal ◽  
Four Levels ◽  
Vanadium Oxide Thin Films

Direct current (DC) magnetron sputtering method was used to deposit vanadium oxide thin films on ordinary glass substrates from a vanadium metal target and a five factors four levels orthogonal experimental method was used to find the best combination of sputtering pressure, sputtering power, oxygen/argon flow ratio, substrate temperature and deposition time for fabricating high temperature coefficient of resistance (TCR) vanadium oxide film. The results indicate that a good combination of these parameters should be 1Pa, 160W, 1.5/25, 280°C and 60 minutes. And the film fabricated using this parameters combination is mainly composed of V2O5and has a resistance range of 80.3kΩ to 40kΩ while its temperature changed from 20°C to 80°C.

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