Mixed transition metal dichalcogenides have been prepared from binary precursors via mechanochemical generation of 3D-heterostructures and subsequent reactive fusion.
1T-titanium selenide (1T-TiSe2), a representative of 1T phase transition metal dichalcogenides (TMDs), exhibits semimetallic behaviour with a nearly zero bandgap structure, which makes it a promising photoelectric material.
Advanced van der Waals (vdW) heterostructure devices rely on the incorporation of high quality dielectric materials which need to possess a low defect density as well as being atomically smooth...
“Bottom-up’’ synthetic methods have the potential to produce high quality TMD nanostructures with controllable properties such as size, phase, morphology, and at low-cost.
ABSTRACTSeveral novel transition metal nitrides and oxynitrides were synthesized via ammonolysis of solid state oxide precursors at temperatures ranging from 700°C-900°C and reaction times ranging from 12 hours to 4 days. The products were characterized by powder X-ray diffraction and their structures were determined by powder X-ray Rietveld refinement. The relationships between the structures of these nitrides and oxynitrides, and their similarity to the structures of the transition metal dichalcogenides, is discussed.
Strain dependence of band gaps and exciton energies in pure and mixed transition-metal dichalcogenides