ChemInform Abstract: Electrical Properties of Individual Zinc Oxide Grain Boundaries Determined by Spatially Resolved Tunneling Spectroscopy.

ChemInform ◽  
2010 ◽  
Vol 22 (2) ◽  
pp. no-no
Author(s):  
G. S. ROHRER ◽  
D. A. BONNELL
Keyword(s):  
Zinc Oxide ◽  
Electrical Properties ◽  
Grain Boundaries ◽  
Tunneling Spectroscopy ◽  
Spatially Resolved

scholarly journals Electrical properties of mechanically activated zinc oxide

2006 ◽  
Vol 38 (2) ◽  
pp. 131-138 ◽  
Author(s):  
K. Vojisavljevic ◽  
M. Zunic ◽  
G. Brankovic ◽  
T. Sreckovic
Keyword(s):  
Zinc Oxide ◽  
Electrical Properties ◽  
Grain Boundaries ◽  
Arrhenius Equation ◽  
Electrical Response ◽  
High Energy ◽  
Microstructural Properties ◽  
Impedance Analyzer ◽  
Zinc Oxide Powder ◽  
Zno Ceramics

Microstructural properties of a commercial zinc oxide powder were modified by mechanical activation in a high-energy vibro-mill. The obtained powders were dry pressed and sintered at 1100?C for 2 h. The electrical properties of grain boundaries of obtained ZnO ceramics were studied using an ac impedance analyzer. For that purpose, the ac electrical response was measured in the temperature range from 23 to 240?C in order to determine the resistance and capacitance of grain boundaries. The activation energies of conduction were obtained using an Arrhenius equation. Donor densities were calculated from Mott-Schottky measurements. The influence of microstructure, types and concentrations of defects on electrical properties was discussed.

Grain Boundary Dopant and Heat Treatment Effects on the Electrical Properties of Polycrystalline ZnO

1995 ◽  
Vol 411 ◽  
Author(s):  
T. D. Chen ◽  
J.-R. Lee ◽  
H. L. Tuller ◽  
Y.-M. Chiang
Keyword(s):  
Heat Treatment ◽  
Zinc Oxide ◽  
Electrical Properties ◽  
Grain Boundary ◽  
Grain Boundaries ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Low Leakage ◽  
Current Voltage ◽  
Transient Spectroscopy

ABSTRACTSimplified varistor systems of bismuth- and cobalt-doped zinc oxide are studied. A prior study has shown that the distributions of bismuth segregation at the grain boundaries in such samples can be controlled by varying microstructure and heat treatment. Current-voltage and deep level transient spectroscopy measurements were done to evaluate the corresponding electrical properties. Low leakage and α values of ˜30 were attained, despite the nominal, twocomponent doping of these simplified varistors. Moreover, these samples show the signature defects that are found in many multi-dopant, commercial devices: two shallow bulk traps at ˜0.14 eV and ˜0.24 eV and one prominent interfacial trap at ˜1 eV.

EELS Measurement of the Local Electronic Structure of Copper Atoms Segregated to Aluminum Grain Boundaries

1996 ◽  
Vol 54 ◽  
pp. 342-343
Author(s):  
S.J. Splinter ◽  
J. Bruley ◽  
P.E. Batson ◽  
D.A. Smith ◽  
R. Rosenberg
Keyword(s):  
Electronic Structure ◽  
Grain Boundaries ◽  
Boundary Segregation ◽  
Thin Layers ◽  
Nominal Composition ◽  
Spatially Resolved ◽  
Service Lifetime ◽  
Heat Treated ◽  
Probe Size ◽  
Local Electronic Structure

It has long been known that the addition of Cu to Al interconnects improves the resistance to electromigration failure. It is generally accepted that this improvement is the result of Cu segregation to Al grain boundaries. The exact mechanism by which segregated Cu increases service lifetime is not understood, although it has been suggested that the formation of thin layers of θ-CuA12 (or some metastable substoichiometric precursor, θ’ or θ”) at the boundaries may be necessary. This paper reports measurements of the local electronic structure of Cu atoms segregated to Al grain boundaries using spatially resolved EELS in a UHV STEM. It is shown that segregated Cu exists in a chemical environment similar to that of Cu atoms in bulk θ-phase precipitates.Films of 100 nm thickness and nominal composition Al-2.5wt%Cu were deposited by sputtering from alloy targets onto NaCl substrates. The samples were solution heat treated at 748K for 30 min and aged at 523K for 4 h to promote equilibrium grain boundary segregation. EELS measurements were made using a Gatan 666 PEELS spectrometer interfaced to a VG HB501 STEM operating at 100 keV. The probe size was estimated to be 1 nm FWHM. Grain boundaries with the narrowest projected width were chosen for analysis. EDX measurements of Cu segregation were made using a VG HB603 STEM.

scholarly journals Effects of Charge Compensation on Colossal Permittivity and Electrical Properties of Grain Boundary of CaCu3Ti4O12 Ceramics Substituted by Al3+ and Ta5+/Nb5+

Molecules ◽  
2021 ◽  
Vol 26 (11) ◽  
pp. 3294
Author(s):  
Jakkree Boonlakhorn ◽  
Jedsada Manyam ◽  
Pornjuk Srepusharawoot ◽  
Sriprajak Krongsuk ◽  
Prasit Thongbai
Keyword(s):  
Dielectric Properties ◽  
Electrical Properties ◽  
Grain Boundary ◽  
Grain Boundaries ◽  
Barrier Height ◽  
Potential Barrier ◽  
Charge Compensation ◽  
Solid State Reaction Method ◽  
Wide Frequency Range ◽  
Potential Barrier Height

The effects of charge compensation on dielectric and electrical properties of CaCu3Ti4-x(Al1/2Ta1/4Nb1/4)xO12 ceramics (x = 0−0.05) prepared by a solid-state reaction method were studied based on the configuration of defect dipoles. A single phase of CaCu3Ti4O12 was observed in all ceramics with a slight change in lattice parameters. The mean grain size of CaCu3Ti4-x(Al1/2Ta1/4Nb1/4)xO12 ceramics was slightly smaller than that of the undoped ceramic. The dielectric loss tangent can be reduced by a factor of 13 (tanδ ~0.017), while the dielectric permittivity was higher than 104 over a wide frequency range. Impedance spectroscopy showed that the significant decrease in tanδ was attributed to the highly increased resistance of the grain boundary by two orders of magnitude. The DFT calculation showed that the preferential sites of Al and Nb/Ta were closed together in the Ti sites, forming self-charge compensation, and resulting in the enhanced potential barrier height at the grain boundary. Therefore, the improved dielectric properties of CaCu3Ti4-x(Al1/2Ta1/4Nb1/4)xO12 ceramics associated with the enhanced electrical properties of grain boundaries. In addition, the non-Ohmic properties were also improved. Characterization of the grain boundaries under a DC bias showed the reduction of potential barrier height at the grain boundary. The overall results indicated that the origin of the colossal dielectric properties was caused by the internal barrier layer capacitor structure, in which the Schottky barriers at the grain boundaries were formed.

ChemInform Abstract: SEGREGATION OF LITHIUM OXIDE AT THE GRAIN BOUNDARIES OF ZINC OXIDE

1978 ◽  
Vol 9 (27) ◽  
Author(s):  
Y. MORIYOSHI ◽  
S. SHIRASAKI ◽  
E. S. LEE ◽  
K. TAKAHASHI ◽  
M. ISOBE ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Grain Boundaries ◽  
Lithium Oxide

Optical and electrical properties of p-type zinc oxide thin films synthesized by ion beam assisted deposition

2005 ◽  
Vol 492 (1-2) ◽  
pp. 203-206 ◽  
Author(s):  
Zhi Yan ◽  
Zhi Tang Song ◽  
Wei Li Liu ◽  
Qing Wan ◽  
Fu Min Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Electrical Properties ◽  
Ion Beam ◽  
Optical And Electrical Properties ◽  
Oxide Thin Films ◽  
Ion Beam Assisted Deposition ◽  
P Type

Effect of Crystallographic Quality of Grain Boundaries on Both Mechanical and Electrical Properties of Electroplated Copper Thin Film Interconnections

2015 ◽  
Vol 137 (3) ◽  
Author(s):  
Naokazu Murata ◽  
Naoki Saito ◽  
Kinji Tamakawa ◽  
Ken Suzuki ◽  
Hideo Miura
Keyword(s):  
Electrical Properties ◽  
Grain Boundaries ◽  
Fatigue Fracture ◽  
High Crystallinity ◽  
Mechanical And Electrical Properties ◽  
Copper Interconnection ◽  
Electroplated Copper ◽  
Two Parameters ◽  
Low Crystallinity

Effects of crystallographic quality of grain boundaries on mechanical and electrical properties were investigated experimentally. A novel method using two parameters of image quality (IQ) and confidence index (CI) values based on electron back-scattering diffraction (EBSD) analysis was proposed in order to evaluate crystallographic quality of grain boundaries. IQ value was defined as an index to evaluate crystallinity in region irradiated with electron beam. CI value determined existence of grain boundaries in the region. It was found that brittle intergranular fatigue fracture occurred in the film without annealing and the film annealed at 200 °C because network of grain boundaries with low crystallinity remained in these films. On the other hand, the film annealed at 400 °C caused only ductile transgranular fatigue fracture because grain boundaries with low crystallinity almost disappeared. From results of measurement of electrical properties, electrical resistivity of copper interconnection annealed at 400 °C with high crystallinity (2.09 × 10−8 Ωm) was low and electron migration (EM) resistance was high compared with an copper interconnection without annealing with low crystallinity (3.33 × 10−8 Ωm). It was clarified that the interconnection with high crystallinity had superior electrical properties. Thus, it was clarified that the crystallographic quality of grain boundaries has a strong correlation of mechanical and electrical reliability.

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