ChemInform Abstract: IN SITU PREPARATION OF P-TYPE CADMIUM TELLURIDE THIN FILMS BY CATHODIC ELECTRODEPOSITION

1985 ◽  
Vol 16 (37) ◽  
Author(s):  
R. N. BHATTACHARYA ◽  
K. RAJESHWAR ◽  
R. N. NOUFI
Keyword(s):  
Thin Films ◽  
Cadmium Telluride ◽  
Cathodic Electrodeposition ◽  
In Situ Preparation ◽  
P Type

In Situ Preparation of p‐Type CdTe Thin Films by Cathodic Electrodeposition

1985 ◽  
Vol 132 (3) ◽  
pp. 732-734 ◽  
Author(s):  
R. N. Bhattacharya ◽  
K. Rajeshwar ◽  
R. N. Noufi
Keyword(s):  
Thin Films ◽  
Cathodic Electrodeposition ◽  
In Situ Preparation ◽  
Cdte Thin Films ◽  
P Type

IN-SITU PREPARATION OF YBa2Cu3O7 SUPERCONDUCTING THIN FILMS BY PULSED Nd:YAG LASER DEPOSITION

1992 ◽  
Vol 06 (08) ◽  
pp. 477-483 ◽  
Author(s):  
QINGXIN SU ◽  
SHIFA XU ◽  
DAFU CUI ◽  
HUIBIN LU ◽  
YONGJUN TIAN ◽  
...  
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Nd:Yag Laser ◽  
Ac Susceptibility ◽  
Substrate Surface ◽  
Zero Magnetic Field ◽  
Superconducting Thin Films ◽  
In Situ Preparation ◽  
Zero Resistance

High-T c superconducting thin films of YBa 2 Cu 3 O 7 were grown in-situ on (100) SrTiO 3 substrates by Nedymium:yttrium aluminum garnet [Nd:YAG] laser ablation. The effects of the substrate temperature on the transition temperature, microcrystalline structure and surface morphology of the films were discussed. Best results were obtained in the 730°–770°C range. X-ray diffraction analysis showed that these films were highly c-oriented with the c-axis perpendicular to the substrate surface. At the optimum substrate temperature, a very smooth morphology with only a few small particles were observed by scanning electron microscopy. The zero resistance temperature of these films were ≥ 90 K with a narrow transition width and the ac susceptibility measurement also gave the same result. The highest critical current density obtained at 77 K and zero magnetic field was 3.8 × 106 A/cm 2.

The 'in-situ' preparation and properties of Y-Ba-Cu-O thin films on the SrTiO/sub 3/, Al/sub 2/O/sub 3/ and Si substrates

1991 ◽  
Vol 27 (2) ◽  
pp. 1475-1478 ◽  
Author(s):  
M.I. Faley ◽  
M.E. Gershenson ◽  
N.P. Kuchta ◽  
V.S. Salun
Keyword(s):  
Thin Films ◽  
Si Substrates ◽  
In Situ Preparation

In-Situ Preparation of Y-Ba-Cu-O Thin Films Using Mass-Spectrometer Rate Control and Atomic Oxygen

1992 ◽  
Vol 275 ◽  
Author(s):  
H. Ohlsén ◽  
M. Ottosson ◽  
J. Hudner ◽  
M. ÖStling ◽  
L. Stolt ◽  
...  
Keyword(s):  
Thin Films ◽  
Mass Spectrometer ◽  
Rate Control ◽  
Atomic Oxygen ◽  
Film Structure ◽  
Rocking Curve ◽  
In Situ Preparation ◽  
Layer Structures

ABSTRACTThin films of YBCO were prepared using a mass-spectrometer controlled coevapora-tion/MBE process with atomic oxygen. Under the conditions of low pressure, necessary for mass-spectrometer rate control, it is shown that an atomic oxygen beam source can be utilized in order to grow high quality thin films of YBCO as well as multi-layer structures involving YBCO and Y2O3. Values of Tc = 88.5 K and Jc = 6–106 A/cm2 at 77 K were determined for a strip with a width of 10 μm of YBCO deposited on a LaAlO3 substrate. Film structure is analyzed by XRD and rocking curve measurements. Magnetic characterization of films and multi-layer structures are reported.

In situ preparation of Y/sub 1/Ba/sub 2/Cu/sub 3/O/sub 7-x/ thin films deposited by ion beam sputtering: preliminary results

1991 ◽  
Vol 27 (2) ◽  
pp. 2522-2524 ◽  
Author(s):  
S. Barbanera ◽  
F. Murtas ◽  
L. Scopa ◽  
V. Boffa ◽  
G. Paterno ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Preliminary Results ◽  
In Situ Preparation ◽  
Beam Sputtering

In situ one-step synthesis of p-type copper oxide for low-temperature, solution-processed thin-film transistors

2017 ◽  
Vol 5 (10) ◽  
pp. 2524-2530 ◽  
Author(s):  
Ao Liu ◽  
Shengbin Nie ◽  
Guoxia Liu ◽  
Huihui Zhu ◽  
Chundan Zhu ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Solution Processed ◽  
Naoh Solution ◽  
Temperature Solution ◽  
One Step ◽  
P Type

Solution-processed p-type Cu2O thin films were fabricated via in-situ reaction of CuI film in NaOH solution and their applications in thin-film transistors were successfully demonstrated.

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