ChemInform Abstract: VAPOR PHASE EPITAXIAL GROWTH OF TIN-DOPED GALLIUM ARSENIDE
1988 ◽
Vol 53
(12)
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pp. 2995-3013
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1994 ◽
Vol 139
(3-4)
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pp. 231-237
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2003 ◽
Vol 32
(7)
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pp. 656-660
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Theoretical studies of Si vapor-phase epitaxial growth by Iab initioP molecular-orbital calculations
1990 ◽
Vol 41
(18)
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pp. 12720-12727
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Keyword(s):
Keyword(s):
Keyword(s):
1972 ◽
Vol 119
(3)
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pp. 381
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