Enhanced Thermal Oxidation Stability of Reduced Graphene Oxide by Nitrogen Doping

2014 ◽  
Vol 20 (38) ◽  
pp. 11999-12003 ◽  
Author(s):  
Stefania Sandoval ◽  
Nitesh Kumar ◽  
A. Sundaresan ◽  
C. N. R. Rao ◽  
Amparo Fuertes ◽  
...  
2014 ◽  
Vol 20 (38) ◽  
pp. 12324-12324
Author(s):  
Stefania Sandoval ◽  
Nitesh Kumar ◽  
A. Sundaresan ◽  
C. N. R. Rao ◽  
Amparo Fuertes ◽  
...  

2017 ◽  
Vol 5 (24) ◽  
pp. 12426-12434 ◽  
Author(s):  
Junghoon Yang ◽  
Jeongyim Shin ◽  
Mihui Park ◽  
Gi-Hyeok Lee ◽  
Mawuse Amedzo-Adore ◽  
...  

This work studied the synergistic effect of N-doping and p-PDA functionalization on the properties of RGO for supercapacitors.


Molecules ◽  
2021 ◽  
Vol 26 (21) ◽  
pp. 6424
Author(s):  
Gunawan Witjaksono ◽  
Muhammad Junaid ◽  
Mohd Haris Khir ◽  
Zaka Ullah ◽  
Nelson Tansu ◽  
...  

Graphene as a material for optoelectronic design applications has been significantly restricted owing to zero bandgap and non-compatible handling procedures compared with regular microelectronic ones. In this work, nitrogen-doped reduced graphene oxide (N-rGO) with tunable optical bandgap and enhanced electrical conductivity was synthesized via a microwave-assisted hydrothermal method. The properties of the synthesized N-rGO were determined using XPS, FTIR and Raman spectroscopy, UV/vis, as well as FESEM techniques. The UV/vis spectroscopic analysis confirmed the narrowness of the optical bandgap from 3.4 to 3.1, 2.5, and 2.2 eV in N-rGO samples, where N-rGO samples were synthesized with a nitrogen doping concentration of 2.80, 4.53, and 5.51 at.%. Besides, an enhanced n-type electrical conductivity in N-rGO was observed in Hall effect measurement. The observed tunable optoelectrical characteristics of N-rGO make it a suitable material for developing future optoelectronic devices at the nanoscale.


Carbon ◽  
2013 ◽  
Vol 60 ◽  
pp. 549-551 ◽  
Author(s):  
Yuan Liu ◽  
Qian Feng ◽  
Nujiang Tang ◽  
Xiangang Wan ◽  
Fuchi Liu ◽  
...  

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