Application of borophosphosilicate glass (BPSG) in microelectronic processing

1996 ◽  
Vol 100 (9) ◽  
pp. 1434-1437 ◽  
Author(s):  
M. Kirchhoff ◽  
M. Ilg ◽  
D. Cote
Keyword(s):  
Microelectronic Processing ◽  
Borophosphosilicate Glass

Calibration Method for Elemental Quantification

2000 ◽  
Vol 6 (S2) ◽  
pp. 536-537
Author(s):  
C. B. Vartuli ◽  
F. A. Stevie ◽  
L. A. Giannuzzi ◽  
T. L. Shofner ◽  
B. M. Purcell ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Peak Concentration ◽  
Energy Dispersive Spectrometry ◽  
Secondary Ion Mass Spectrometry ◽  
Rutherford Backscattering Spectrometry ◽  
Calibration Method ◽  
High Dose ◽  
High Concentration ◽  
Borophosphosilicate Glass ◽  
Secondary Ion

Energy Dispersive Spectrometry (EDS) is generally calibrated for quantification using elemental standards. This can introduce errors when quantifying non-elemental samples and does not provide an accurate detection limit. In addition, variations between analysis tools can lead to values that differ considerably, especially for trace elements. By creating a standard with an exact trace composition, many of the errors inherent in EDS quantification measurements can be eliminated.The standards are created by high dose ion implantation. For ions implanted into silicon, a dose of 1E16 cm-2 results in a peak concentration of approximately 1E21 cm-3 or 2% atomic. The exact concentration can be determined using other methods, such as Rutherford Backscattering Spectrometry (RBS) or Secondary Ion Mass Spectrometry (SIMS). For this study, SIMS analyses were made using a CAMECA IMS-6f magnetic sector. Measurement protocols were used that were developed for high concentration measurements, such as B and P in borophosphosilicate glass (BPSG).

Afm Studies of Surface Roughness of Borophosphosilicate Glass (BPSG) Films and Their Impact on Defect Detection Capability for Sub Micron Vlsi Technology

1992 ◽  
Vol 280 ◽  
Author(s):  
H. Rojhantalab ◽  
M. Moinpour ◽  
N. Peter ◽  
M.L.A. Dass ◽  
W. Hough ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Defect Detection ◽  
Device Fabrication ◽  
Interlayer Dielectric ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force ◽  
Vlsi Technology ◽  
Borophosphosilicate Glass

ABSTRACTChemically vapor deposited borophosphosilicate glass (BPSG) has been widely used in microelectronic device fabrication as interlayer dielectric film due to its excellent planarization, gettering and flow properties. With device geometry reducing to sub micron levels, there is an increasingly greater emphasis on detection and elimination of sub micron defects particularly on deposited film. In this paper, we report on the evaluation and characterization of the surface roughness of BPSG films of various thicknesses and film compositions deposited on Si substrates using the Atomic Force Microscopy (AFM). The effects of high temperature densification process on the surface roughness are presented. The defect detection capabilities of conventional laser-based particle counters with respect to the surface roughness of BPSG films are investigated.

Microchannel Arrays in Borophosphosilicate Glass for Photonic Device and Optical Sensor Applications

2005 ◽  
Vol 872 ◽  
Author(s):  
Claire L. Callender ◽  
Patrick Dumais ◽  
Chantal Blanchetière ◽  
Christopher J. Ledderhof ◽  
Julian P. Noad
Keyword(s):  
Cross Sections ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Photonic Devices ◽  
Two Dimensional ◽  
High Temperature Annealing ◽  
Process Variables ◽  
Sensor Applications ◽  
Silica Layers ◽  
Borophosphosilicate Glass

AbstractThe fabrication of two-dimensional uniform arrays of microchannels in borophosphosilicate glass (BPSG) layers deposited by plasma-enhanced chemical vapor deposition (PECVD) is presented. The microchannels, with circular cross-sections of 2-3 μm diameter, are formed by depositing specific thicknesses of BPSG over periodic ridge/space templates etched into underlying silica layers using reactive ion etching (RIE). High temperature annealing results in reflow of the BPSG and the formation of uniform circular or cylindrical voids between the template ridges. Control of microchannel size and geometry through process variables is reported, and exploitation of the microfluidic and optical properties of microchannels and integrated waveguides for applications in optical sensing and photonic devices is demonstrated

Eu and Dy doped borophosphosilicate glass-ceramics for near ultraviolet based light-emitting diode applications

Vacuum ◽  
2019 ◽  
Vol 169 ◽  
pp. 108877 ◽  
Author(s):  
Luyue Niu ◽  
Chaofeng Zhu ◽  
Meimei Zhang ◽  
Zhigang He ◽  
Jianan Liu ◽  
...  
Keyword(s):  
Light Emitting Diode ◽  
Glass Ceramics ◽  
Light Emitting ◽  
Near Ultraviolet ◽  
Borophosphosilicate Glass
Sign in / Sign up

Export Citation Format

Share Document