Enhancing the electrical and thermal stability of organic thin-film transistors by utilizing fluorinated polyimide and silicon dioxide bilayer gate dielectric

2018 ◽  
Vol 136 (5) ◽  
pp. 47013 ◽  
Author(s):  
Xiaoyun Wei ◽  
Jupeng Cao ◽  
Aiyuan Li ◽  
Chao He ◽  
Ming Liu ◽  
...  
Keyword(s):  
Thin Film ◽  
Thermal Stability ◽  
Silicon Dioxide ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Fluorinated Polyimide ◽  
Thermal Stability Of

Thermal stability of organic thin-film transistors with self-assembled monolayer dielectrics

2010 ◽  
Vol 96 (5) ◽  
pp. 053302 ◽  
Author(s):  
Kenjiro Fukuda ◽  
Tomoyuki Yokota ◽  
Kazunori Kuribara ◽  
Tsuyoshi Sekitani ◽  
Ute Zschieschang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thermal Stability ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Self Assembled Monolayer ◽  
Self Assembled ◽  
Thermal Stability Of

SuPR-NaP Technique for Printing Ultrafine Silver Electrodes and its Use for Low-Voltage Operation of Organic Thin-Film Transistors

MRS Advances ◽  
2018 ◽  
Vol 3 (49) ◽  
pp. 2931-2936
Author(s):  
G. Kitahara ◽  
K. Aoshima ◽  
J. Tsutsumi ◽  
H. Minemawari ◽  
S. Arai ◽  
...  
Keyword(s):  
Thin Film ◽  
Dielectric Layer ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Low Voltage ◽  
Organic Thin Film Transistors ◽  
Base Layer ◽  
Organic Thin Film ◽  
Low Voltage Operation ◽  
Silver Electrodes

ABSTRACTRecently, an epoch-making printing technology called “SuPR-NaP (Surface Photo-Reactive Nanometal Printing)” that allows easy, high-speed, and large-area manufacturing of ultrafine silver wiring patterns has been developed. Here we demonstrate low-voltage operation of organic thin-film transistors (OTFTs) composed of printed source/drain electrodes that are produced by the SuPR-NaP technique. We utilize an ultrathin layer of perfluoropolymer, Cytop, that functions not only as a base layer for producing patterned reactive surface in the SuPR-NaP technique but also as an ultrathin gate dielectric layer of OTFTs. By the use of 22 nm-thick Cytop gate dielectric layer, we successfully operate polycrystalline pentacene OTFTs below 2 V with negligible hysteresis. We also observe the improvement of carrier injection by the surface modification of printed silver electrodes. We discuss that the SuPR-NaP technique allows the production of high-capacitance gate dielectric layers as well as high-resolution printed silver electrodes, which provides promising bases for producing practical active-matrix OTFT backplanes.

Densely cross-linked polysiloxane dielectric for organic thin-film transistors with enhanced electrical stability

2019 ◽  
Vol 7 (19) ◽  
pp. 5821-5829 ◽  
Author(s):  
Joo-Young Kim ◽  
Eun Kyung Lee ◽  
Jiyoung Jung ◽  
Don-Wook Lee ◽  
Youngjun Yun ◽  
...  
Keyword(s):  
Thin Film ◽  
Hybrid Material ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Organic Thin Film Transistors ◽  
Cross Linking ◽  
Urethane Acrylate ◽  
Organic Thin Film ◽  
Electrical Stability ◽  
Inorganic Hybrid

A solution-processable organic–inorganic hybrid material composed of a polysiloxane urethane acrylate composite (PSUAC) was developed through a dual cross-linking mechanism and satisfies all the requirements for use as a gate dielectric for flexible organic thin-film transistors (OTFTs).

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