Adjustable amine-epoxy composition in a stratified thin film with a spin-coating process: A useful tool for establishing relationships between the local glass-transition temperature at the interface and the network structure

2015 ◽  
Vol 132 (25) ◽  
pp. n/a-n/a ◽  
Author(s):  
Pascal Carriere ◽  
Sandra Onard ◽  
Isabelle Martin ◽  
Jean-François Chailan
1997 ◽  
Vol 476 ◽  
Author(s):  
P. H. Townsend ◽  
S. J. Martin ◽  
J. Godschalx ◽  
D. R. Romer ◽  
D. W. Smith ◽  
...  

AbstractA novel polymer has been developed for use as a thin film dielectric in the interconnect structure of high density integrated circuits. The coating is applied to the substrate as an oligomeric solution, SiLK*, using conventional spin coating equipment and produces highly uniform films after curing at 400 °C to 450 °C. The oligomeric solution, with a viscosity of ca. 30 cPs, is readily handled on standard thin film coating equipment. Polymerization does not require a catalyst. There is no water evolved during the polymerization. The resulting polymer network is an aromatic hydrocarbon with an isotropie structure and contains no fluorine.The properties of the cured films are designed to permit integration with current ILD processes. In particular, the rate of weight-loss during isothermal exposures at 450 °C is ca. 0.7 wt.%/hour. The dielectric constant of cured SiLK has been measured at 2.65. The refractive index in both the in-plane and out-of-plane directions is 1.63. The flow characteristics of SiLK lead to broad topographic planarization and permit the filling of gaps at least as narrow as 0.1 μm. The glass transition temperature for the fully cured film is greater than 490 °C. The coefficient of thermal expansivity is 66 ppm/°C below the glass transition temperature. The stress in fully cured films on Si wafers is ca. 60 MPa at room temperature. The fracture toughness measured on thin films is 0.62 MPa m ½. Thin coatings absorb less than 0.25 wt.% water when exposed to 80% relative humidity at room temperature.


2006 ◽  
Vol 510-511 ◽  
pp. 94-97
Author(s):  
Dae Yong Shin ◽  
Myung Gi So ◽  
Sang Mok Han

Thin film photocatalysts of TiO2 coated on the glass were prepared to self-clean and eliminate air pollutants by spin coating process with Ti(OC3H7 i)4, including PEG. The surface structure of TiO2 films changed according to the molecular size of PEG. It was found that NOx was efficiently eliminated by the TiO2 film photocatalyst. The contact angle of water drop on the TiO2 films decreased to less than 10°. It revealed the hydrophilic property of TiO2 films. The morphology and the crystal structure of TiO2 films were affected most.


2000 ◽  
Vol 44 (4) ◽  
pp. 961-972 ◽  
Author(s):  
Jeffry J. Fedderly ◽  
Gilbert F. Lee ◽  
John D. Lee ◽  
Bruce Hartmann ◽  
Karel Dušek ◽  
...  

2012 ◽  
Vol 16 ◽  
pp. 217-222 ◽  
Author(s):  
Ying Liu ◽  
Deyi Kong ◽  
Jiawei Li ◽  
Cong Zhao ◽  
Chilai Chen ◽  
...  

Materials ◽  
2016 ◽  
Vol 9 (7) ◽  
pp. 607 ◽  
Author(s):  
Katarzyna Bandzierz ◽  
Louis Reuvekamp ◽  
Jerzy Dryzek ◽  
Wilma Dierkes ◽  
Anke Blume ◽  
...  

2012 ◽  
Vol 512-515 ◽  
pp. 994-997 ◽  
Author(s):  
Zhao Xia Hou ◽  
Zhao Lu Xue ◽  
Shao Hong Wang ◽  
Xiao Dan Hu ◽  
Hao Ran Lu ◽  
...  

Oxyfluoride tellurite glass with the composition of TeO2-AlF3-LaF3-ZnO/ZnCl2/ZnF2 was prepared successfully. The thermal stability and structure of TeO2-AlF3-LaF3 system tellurite glass were studied bySubscript text DSC and IR spectra. The results indicated that glass transition temperature of TeO2-AlF3-LaF3-ZnO/ZnCl2/ZnF2 glass was higher than that of (1-x)TeO2-xAlF3 (x=10%, 20%, 30%, 40%, 50%, in mol%) binary glass system slightly. A small number of ZnF2/ZnCl2/ZnO (5mol%) improved glass thermal stability. After adding 5mol% ZnF2/ZnO/ZnCl2 into fluoride tellurite glass respectively, glass transition temperature increased in turn. The introduction of 5mol% different zinc compounds had a little impact on the glass network structure.


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