Effect of crystallinity on surface morphology and light transmittance of poly(vinylidene fluoride-co-hexafluoropropylene) thin film

2009 ◽  
Vol 114 (5) ◽  
pp. 3331-3337 ◽  
Author(s):  
Sang Goo Lee ◽  
Jong Sung Lee ◽  
Jong-Wook Ha ◽  
In Jun Park ◽  
Soo-Bok Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Surface Morphology ◽  
Vinylidene Fluoride ◽  
Light Transmittance ◽  
Poly Vinylidene Fluoride

Preparation and electrical properties of γ form poly(vinylidene fluoride) thin film by vapour deposition in the presence of an electric field

1991 ◽  
Vol 202 (2) ◽  
pp. 213-220 ◽  
Author(s):  
Akiyoshi Takeno ◽  
Norimasa Okui ◽  
Tetsuji Kitoh ◽  
Michiharu Muraoka ◽  
Susumu Umemoto ◽  
...  
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Electric Field ◽  
Vapour Deposition ◽  
Vinylidene Fluoride ◽  
Poly Vinylidene Fluoride

Morphology control of poly(vinylidene fluoride) thin film made with electrospray

2006 ◽  
Vol 298 (2) ◽  
pp. 639-651 ◽  
Author(s):  
Ivo B. Rietveld ◽  
K. Kobayashi ◽  
H. Yamada ◽  
K. Matsushige
Keyword(s):  
Thin Film ◽  
Vinylidene Fluoride ◽  
Morphology Control ◽  
Poly Vinylidene Fluoride

Integrated Pyroelectric Infrared Sensor Using Pvdf thin Film Deposited by Electro-Spray Method

1993 ◽  
Vol 310 ◽  
Author(s):  
Ryouji Asahi ◽  
Jiro Sakata ◽  
Osamu Tabata ◽  
Midori Mochizuki ◽  
Susumu Sugiyama ◽  
...  
Keyword(s):  
Thin Film ◽  
Silicon Substrate ◽  
Thermal Conduction ◽  
Vinylidene Fluoride ◽  
Sacrificial Layer ◽  
Pyroelectric Coefficient ◽  
Infrared Sensor ◽  
Etching Technique ◽  
Spray Method ◽  
Poly Vinylidene Fluoride

AbstractA pyroelectric infrared sensor using a poly(vinylidene fluoride) (PVDF) thin film has been integrated with a read-out circuit on a silicon substrate. The PVDF thin film with a thickness of 1-2 µm was deposited on the sensing area by an electro-spray (ESP) method. A form I crystal and a large pyroelectric coefficient of 4 nCcm−2K−1 were observed just after the deposition without any poling treatments. The fabrication process of the sensor was based on a standard MOS LSI process and a polysilicon sacrificial layer etching technique. In order to reduce the heat capacitance and the thermal conduction, the PVDF thin film was supported on a thin Si3N4 membrane structure formed by etching a part of the silicon substrate under the sensing area. The sensor with a sensing area of 400x400 µm2 had a responsivity of 98 V/W, a detectivity of l.4× 107 cmHz1/2W−1, an NEP of 2.9× 10−99 Hz1/2W at a frequency of 100 Hz and a time constant of 1.3 msec.

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