Influence of substrate material and ion bombardment on plasma-deposited fluorocarbon thin films

1994 ◽  
Vol 53 (12) ◽  
pp. 1631-1638 ◽  
Author(s):  
M. J. O'Keefe ◽  
J. M. Rigsbee
Keyword(s):  
Thin Films ◽  
Ion Bombardment ◽  
Substrate Material ◽  
Influence Of Substrate

scholarly journals Influence of Substrate Materials on Nucleation and Properties of Iridium Thin Films Grown by ALD

Coatings ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 173
Author(s):  
Paul Schmitt ◽  
Vivek Beladiya ◽  
Nadja Felde ◽  
Pallabi Paul ◽  
Felix Otto ◽  
...  
Keyword(s):  
Thin Films ◽  
Film Growth ◽  
Bulk Material ◽  
Atomic Layer ◽  
Substrate Material ◽  
Fused Silica ◽  
Silicon Wafers ◽  
Force Microscopy ◽  
Angle Measurements ◽  
Influence Of Substrate

Ultra-thin metallic films are widely applied in optics and microelectronics. However, their properties differ significantly from the bulk material and depend on the substrate material. The nucleation, film growth, and layer properties of atomic layer deposited (ALD) iridium thin films are evaluated on silicon wafers, BK7, fused silica, SiO2, TiO2, Ta2O5, Al2O3, HfO2, Ru, Cr, Mo, and graphite to understand the influence of various substrate materials. This comprehensive study was carried out using scanning electron and atomic force microscopy, X-ray reflectivity and diffraction, four-point probe resistivity and contact angle measurements, tape tests, and Auger electron spectroscopy. Within few ALD cycles, iridium islands occur on all substrates. Nevertheless, their size, shape, and distribution depend on the substrate. Ultra-thin (almost) closed Ir layers grow on a Ta2O5 seed layer after 100 cycles corresponding to about 5 nm film thickness. In contrast, the growth on Al2O3 and HfO2 is strongly inhibited. The iridium growth on silicon wafers is overall linear. On BK7, fused silica, SiO2, TiO2, Ta2O5, Ru, Cr, and graphite, three different growth regimes are distinguishable. The surface free energy of the substrates correlates with their iridium nucleation delay. Our work, therefore, demonstrates that substrates can significantly tailor the properties of ultra-thin films.

Influence of substrate material on the microstructure and optical properties of hot wall deposited SnS thin films

2015 ◽  
Vol 585 ◽  
pp. 40-44 ◽  
Author(s):  
S.A. Bashkirov ◽  
V.F. Gremenok ◽  
V.A. Ivanov ◽  
V.V. Shevtsova ◽  
P.P. Gladyshev
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Substrate Material ◽  
Influence Of Substrate ◽  
Sns Thin Films

scholarly journals Influence of substrate material on spectral properties and thermal quenching of photoluminescence of silicon vacancy colour centres in diamond thin films

2017 ◽  
Vol 68 (7) ◽  
pp. 3-9
Author(s):  
Kateřina Dragounová ◽  
Tibor Ižák ◽  
Alexander Kromka ◽  
Zdeněk Potůček ◽  
Zdeněk Bryknar ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Quenching ◽  
Substrate Material ◽  
Photoluminescence Intensity ◽  
Zero Phonon Line ◽  
Colour Centres ◽  
Silicon Vacancy ◽  
Diamond Peak ◽  
Diamond Thin Films ◽  
Influence Of Substrate

AbstractNanocrystalline diamond films with bright photoluminescence of silicon-vacancy colour centres have been grown using a microwave plasma enhanced CVD technique. The influence of substrate material (quartz, Al2O3, Mo and Si) on a reproducible fabrication of diamond thin films with Si-V optical centres is presented. Film quality and morphology are characterized by Raman spectroscopy and SEM technique. SEM shows well faceted diamond grains with sizes from 170 to 300 nm. The diamond peak is confirmed in Raman spectra for all samples. In the case of the quartz substrate, a redshift of the diamond peak is observed (≈3.5 cm−1) due to tension in the diamond film. The steady-state photoluminescence intensity was measured in the temperature range from 11 K to 300 K. All spectra consist of a broad emission band with a maximum near 600 nm and of a sharp zero phonon line in the vicinity of 738 nm corresponding to Si-V centres that is accompanied with a phonon sideband peaking at 757 nm. Activation energies for the thermal quenching of Si-V centre photoluminescence were determined and the effect of the substrate on photoluminescence properties is discussed too.

scholarly journals Influence of Substrate Material on the Microstructure of Cu2ZnSnS4 Thin Films

2018 ◽  
Vol 13 (3) ◽  
pp. 363-367
Author(s):  
Yauheni V. Asakovich ◽  
Simon A. Bashkirov ◽  
Alena V. Stanchik ◽  
Valery F. Gremenok ◽  
Raimondas Giraitis ◽  
...  
Keyword(s):  
Thin Films ◽  
Substrate Material ◽  
Influence Of Substrate

Influence of substrate material on K α -line fluorescence intensity in chromium thin films

2013 ◽  
Vol 79 (6) ◽  
pp. 849-853
Author(s):  
N. I. Mashin ◽  
I. A. Bacherikova ◽  
E. A. Chernjaeva ◽  
A. N. Tumanova ◽  
A. A. Ershov
Keyword(s):  
Thin Films ◽  
Fluorescence Intensity ◽  
Substrate Material ◽  
Influence Of Substrate

Defects in β-SiC thin films grown on α-SiC substrates

1988 ◽  
Vol 46 ◽  
pp. 568-569
Author(s):  
Karren L. More
Keyword(s):  
Thin Films ◽  
Semiconductor Device ◽  
Lattice Mismatch ◽  
Chemical Vapor ◽  
Substrate Material ◽  
Growth Interface ◽  
Si Substrates ◽  
Thermal Expansion Coefficients ◽  
Device Applications ◽  
Expansion Coefficients

Beta-SiC is an ideal candidate material for use in semiconductor device applications. Currently, monocrystalline β-SiC thin films are epitaxially grown on {100} Si substrates by chemical vapor deposition (CVD). These films, however, contain a high density of defects such as stacking faults, microtwins, and antiphase boundaries (APBs) as a result of the 20% lattice mismatch across the growth interface and an 8% difference in thermal expansion coefficients between Si and SiC. An ideal substrate material for the growth of β-SiC is α-SiC. Unfortunately, high purity, bulk α-SiC single crystals are very difficult to grow. The major source of SiC suitable for use as a substrate material is the random growth of {0001} 6H α-SiC crystals in an Acheson furnace used to make SiC grit for abrasive applications. To prepare clean, atomically smooth surfaces, the substrates are oxidized at 1473 K in flowing 02 for 1.5 h which removes ∽50 nm of the as-grown surface. The natural {0001} surface can terminate as either a Si (0001) layer or as a C (0001) layer.

Ion Beam Mixing of Ni-Ti Bilayered Thin Films

1985 ◽  
Vol 43 ◽  
pp. 290-291
Author(s):  
A. K. Rai ◽  
R. S. Bhattacharya ◽  
M. H. Rashid
Keyword(s):  
Crystal Structure ◽  
Thin Films ◽  
Amorphous Alloys ◽  
Ion Beam ◽  
Ion Bombardment ◽  
High Energy ◽  
Mixing Efficiency ◽  
Ion Beam Mixing ◽  
Enhanced Diffusion ◽  
Binary Metal

Ion beam mixing has recently been found to be an effective method of producing amorphous alloys in the binary metal systems where the two original constituent metals are of different crystal structure. The mechanism of ion beam mixing are not well understood yet. Several mechanisms have been proposed to account for the observed mixing phenomena. The first mechanism is enhanced diffusion due to defects created by the incoming ions. Second is the cascade mixing mechanism for which the kinematicel collisional models exist in the literature. Third mechanism is thermal spikes. In the present work we have studied the mixing efficiency and ion beam induced amorphisation of Ni-Ti system under high energy ion bombardment and the results are compared with collisional models. We have employed plan and x-sectional veiw TEM and RBS techniques in the present work.

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