A Conjugated Polymer Containing Arylazopyrazole Units in the Side Chains for Field‐Effect Transistors Optically Tunable by Near Infra‐Red Light

2020 ◽  
Vol 59 (33) ◽  
pp. 13844-13851 ◽  
Author(s):  
Jianwu Tian ◽  
Zitong Liu ◽  
Wenlin Jiang ◽  
Dandan Shi ◽  
Liangliang Chen ◽  
...  
2020 ◽  
Vol 132 (33) ◽  
pp. 13948-13955
Author(s):  
Jianwu Tian ◽  
Zitong Liu ◽  
Wenlin Jiang ◽  
Dandan Shi ◽  
Liangliang Chen ◽  
...  

2019 ◽  
Vol 29 (12) ◽  
pp. 1807176 ◽  
Author(s):  
Jianwu Tian ◽  
Lulu Fu ◽  
Zitong Liu ◽  
Hua Geng ◽  
Yanan Sun ◽  
...  

ACS Nano ◽  
2015 ◽  
Vol 9 (5) ◽  
pp. 5264-5274 ◽  
Author(s):  
Hyun Ah Um ◽  
Dae Hee Lee ◽  
Dong Uk Heo ◽  
Da Seul Yang ◽  
Jicheol Shin ◽  
...  

2015 ◽  
Vol 51 (52) ◽  
pp. 10514-10516 ◽  
Author(s):  
Yue Cao ◽  
Jing-Song Yuan ◽  
Xu Zhou ◽  
Xiao-Ye Wang ◽  
Fang-Dong Zhuang ◽  
...  

Based on a π-extended isoindigo derivative NBDOPV, the conjugated polymer PITET shows a hole mobility of 1.92 cm2 V−1 s−1.


2005 ◽  
Vol 871 ◽  
Author(s):  
Nenad Marjanović ◽  
Th. B. Singh ◽  
Serap Günes ◽  
Helmut Neugebauer ◽  
Niyazi Serdar Sariciftci

AbstractPhotoactive organic field-effect transistors, photOFETs, based on a conjugated polymer/fullerene blend, MDMO-PPV: PCBM (1:4), and polymeric dielectrics as polyvinylalcohol (PVA) or divinyltetramethyldisiloxane-bis(benzocyclobutene) (BCB) with top source and drain electrodes were fabricated and characterized in dark and under AM1.5 illumination. With LiF/Al as top source and drain contacts the devices feature n-type transistor behavior in dark with electron mobility of 10-2cm2/Vs. Under illumination, a large free carrier concentration from photo-induced charge transfer at the polymer/fullerene bulk heterojunction (photodoping) is created. The device performance was studied with different illumination intensities and showed to be strongly influenced by the nature of the organic dielectric/organic semiconductor interface resulting in phototransistor behavior in BCB-based photOFETs and in phototransistor or photoresistor behavior for PVA-based photOFETs.


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