Not Only Columns: High Hole Mobility in a Discotic Nematic Mesophase Formed by Metal-Containing Porphyrin-Core Dendrimers

2016 ◽  
Vol 129 (5) ◽  
pp. 1279-1283 ◽  
Author(s):  
Alberto Concellón ◽  
Mercedes Marcos ◽  
Pilar Romero ◽  
José Luis Serrano ◽  
Roberto Termine ◽  
...  
Keyword(s):  
Hole Mobility ◽  
Nematic Mesophase ◽  
Porphyrin Core

Not Only Columns: High Hole Mobility in a Discotic Nematic Mesophase Formed by Metal-Containing Porphyrin-Core Dendrimers

2016 ◽  
Vol 56 (5) ◽  
pp. 1259-1263 ◽  
Author(s):  
Alberto Concellón ◽  
Mercedes Marcos ◽  
Pilar Romero ◽  
José Luis Serrano ◽  
Roberto Termine ◽  
...  
Keyword(s):  
Hole Mobility ◽  
Nematic Mesophase ◽  
Porphyrin Core

scholarly journals High hole mobility and light-harvesting in discotic nematic dendrimers prepared via ‘click’ chemistry

2019 ◽  
Vol 7 (10) ◽  
pp. 2911-2918 ◽  
Author(s):  
Alberto Concellón ◽  
Roberto Termine ◽  
Attilio Golemme ◽  
Pilar Romero ◽  
Mercedes Marcos ◽  
...  
Keyword(s):  
Energy Transfer ◽  
Liquid Crystals ◽  
Click Chemistry ◽  
Light Harvesting ◽  
Hole Mobility ◽  
Antenna Effect ◽  
New Strategy ◽  
Porphyrin Core

We have developed a new strategy involving ‘click’ chemistry to prepare porphyrin-core dendrimers with peripheral coumarin moieties. They exhibit nematic discotic phases with hole mobilities among the highest values described in liquid crystals. Moreover, excitation of the coumarin moieties leads to energy transfer (antenna effect) to the porphyrin core.

Fabrication of Monolithic Integrated Bimaterial Resonant Uncooled IR Sensor

2013 ◽  
Vol 543 ◽  
pp. 176-179 ◽  
Author(s):  
D.Q. Zhao ◽  
Xia Zhang ◽  
P. Liu ◽  
F. Yang ◽  
C. Lin ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Hole Mobility ◽  
Micro Electro Mechanical System ◽  
Cmos Process ◽  
Standard Cmos Process ◽  
Ir Sensor ◽  
Cantilever Structure ◽  
Cmos Mems ◽  
On Chip ◽  
Micro Cantilever

In this work we studied the fabrication of a monolithic bimaterial micro-cantilever resonant IR sensor with on-chip drive circuits. The effects of high temperature process and stress induced performance degradation were investigated. The post-CMOS MEMS (micro electro mechanical system) fabrication process of this IR sensor is the focus of this paper, starting from theoretical analysis and simulation, and then moving to experimental verification. The capacitive cantilever structure was fabricated by surface micromachining method, and drive circuits were prepared by standard CMOS process. While the stress introduced by MEMS films, such as the tensile silicon nitride which works as a contact etch stopper layer for MOSFETs and releasing stop layer for the MEMS structure, increases the electron mobility of NMOS, PMOS hole mobility decreases. Moreover, the NMOS threshold voltage (Vth) shifts, and transconductance (Gm) degrades. An additional step of selective removing silicon nitride capping layer and polysilicon layer upon IC area were inserted into the standard CMOS process to lower the stress in MOSFET channel regions. Selective removing silicon nitride and polysilicon before annealing can void 77% Vth shift and 86% Gm loss.

Packing Effect on the Transfer Integrals and Mobility in α,α′-bis(dithieno[3,2-b:2′,3′-d]thiophene) (BDT) and its Heteroatom-Substituted Analogues

2011 ◽  
Vol 64 (12) ◽  
pp. 1587 ◽  
Author(s):  
Ahmad Irfan ◽  
Abdullah G. Al-Sehemi ◽  
Shabbir Muhammad ◽  
Jingping Zhang
Keyword(s):  
Electron Transfer ◽  
Electron Mobility ◽  
Hole Mobility ◽  
Experimental Investigations ◽  
Hole Transfer ◽  
Space Group ◽  
Space Groups ◽  
Transfer Integrals ◽  
Packing Effect ◽  
Good Agreement

Theoretically calculated mobility has revealed that BDT is a hole transfer material, which is in good agreement with experimental investigations. The BDT, NHBDT, and OBDT are predicted to be hole transfer materials in the C2/c space group. Comparatively, hole mobility of BHBDT is 7 times while electron mobility is 20 times higher than the BDT. The packing effect for BDT and designed crystals was investigated by various space groups. Generally, mobility increases in BDT and its analogues by changing the packing from space group C2/c to space groups P1 or . In the designed ambipolar material, BHBDT hole mobility has been predicted 0.774 and 3.460 cm2 Vs–1 in space groups P1 and , which is 10 times and 48 times higher than BDT (0.075 and 0.072 cm2 Vs–1 in space groups P1 and ), respectively. Moreover, the BDT behaves as an electron transfer material by changing the packing from the C2/c space group to P1 and .

scholarly journals First-Principles Study of a MoS2-PbS van der Waals Heterostructure Inspired by Naturally Occurring Merelaniite

Materials ◽  
2021 ◽  
Vol 14 (7) ◽  
pp. 1649
Author(s):  
Gemechis D. Degaga ◽  
Sumandeep Kaur ◽  
Ravindra Pandey ◽  
John A. Jaszczak
Keyword(s):  
Density Functional ◽  
Van Der Waals ◽  
Hole Mobility ◽  
Functional Theory ◽  
Mos2 Monolayer ◽  
Naturally Occurring ◽  
Weak Interlayer ◽  
Bulk Structure ◽  
P Type ◽  
Interlayer Bonding

Vertically stacked, layered van der Waals (vdW) heterostructures offer the possibility to design materials, within a range of chemistries and structures, to possess tailored properties. Inspired by the naturally occurring mineral merelaniite, this paper studies a vdW heterostructure composed of a MoS2 monolayer and a PbS bilayer, using density functional theory. A commensurate 2D heterostructure film and the corresponding 3D periodic bulk structure are compared. The results find such a heterostructure to be stable and possess p-type semiconducting characteristics. Due to the heterostructure’s weak interlayer bonding, its carrier mobility is essentially governed by the constituent layers; the hole mobility is governed by the PbS bilayer, whereas the electron mobility is governed by the MoS2 monolayer. Furthermore, we estimate the hole mobility to be relatively high (~106 cm2V−1s−1), which can be useful for ultra-fast devices at the nanoscale.

scholarly journals Blackbody-sensitive room-temperature infrared photodetectors based on low-dimensional tellurium grown by chemical vapor deposition

2021 ◽  
Vol 7 (16) ◽  
pp. eabf7358
Author(s):  
Meng Peng ◽  
Runzhang Xie ◽  
Zhen Wang ◽  
Peng Wang ◽  
Fang Wang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Room Temperature ◽  
Spectral Response ◽  
Chemical Vapor ◽  
Hole Mobility ◽  
Infrared Detection ◽  
Infrared Photodetectors ◽  
Bandgap Semiconductors ◽  
Low Dimensional

Blackbody-sensitive room-temperature infrared detection is a notable development direction for future low-dimensional infrared photodetectors. However, because of the limitations of responsivity and spectral response range for low-dimensional narrow bandgap semiconductors, few low-dimensional infrared photodetectors exhibit blackbody sensitivity. Here, highly crystalline tellurium (Te) nanowires and two-dimensional nanosheets were synthesized by using chemical vapor deposition. The low-dimensional Te shows high hole mobility and broadband detection. The blackbody-sensitive infrared detection of Te devices was demonstrated. A high responsivity of 6650 A W−1 (at 1550-nm laser) and the blackbody responsivity of 5.19 A W−1 were achieved. High-resolution imaging based on Te photodetectors was successfully obtained. All the results suggest that the chemical vapor deposition–grown low-dimensional Te is one of the competitive candidates for sensitive focal-plane-array infrared photodetectors at room temperature.

scholarly journals Increased hole mobility in anti-ThCr2Si2-type La2O2Bi co-sintered with alkaline earth metal oxides for oxygen intercalation and hole carrier doping

2021 ◽  
Author(s):  
Kota Matsumoto ◽  
Hideyuki Kawasoko ◽  
Noriaki Kimura ◽  
Tomoteru Fukumura
Keyword(s):  
Rare Earth ◽  
Metal Oxides ◽  
Alkaline Earth ◽  
Earth Metal ◽  
Hole Mobility ◽  
Alkaline Earth Metal ◽  
Alkaline Earth Metal Oxides ◽  
Oxygen Intercalation ◽  
Axis Length ◽  
Carrier Doping

Metallic anti-ThCr2Si2-type RE2O2Bi (RE = rare earth) with Bi square nets show superconductivity while insulating La2O2Bi shows high hole mobility, by expanding the c-axis length through oxygen intercalation. In this...

Phase Diagrams of Binary Nematic Mesophase Systems II

1974 ◽  
Vol 25 (1-2) ◽  
pp. 145-151 ◽  
Author(s):  
E. C.-H. Hsu ◽  
J. F. Johnson
Keyword(s):  
Phase Diagrams ◽  
Nematic Mesophase
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