Optimal operation of GaN thin film epitaxy employing control vector parametrization

AIChE Journal ◽  
2006 ◽  
Vol 52 (4) ◽  
pp. 1378-1391 ◽  
Author(s):  
Amit Varshney ◽  
Antonios Armaou
Keyword(s):  
Thin Film ◽  
Optimal Operation ◽  
Control Vector ◽  
Vector Parametrization ◽  
Thin Film Epitaxy

Optimal control of a two-stage reactor system

2006 ◽  
Vol 60 (5) ◽  
Author(s):  
T. Hirmajer ◽  
M. Fikar
Keyword(s):  
Optimal Control ◽  
Dynamic Optimization ◽  
Adjoint Method ◽  
Batch Reactor ◽  
Optimal Operation ◽  
Reactor System ◽  
Control Vector ◽  
Maximum Conversion ◽  
Vector Parametrization ◽  
Operating Constraints

AbstractOptimal operation policies were investigated for a batch reactor system with two different operation stages. At the end of the first nonisothermal stage one of the reactants was added. Since that moment the reactor was operated isothermally. In each stage behavior of the reactor was described by a set of differential equations. The maximum conversion problem was investigated subject to various operating constraints. Dynamic optimization based on the control vector parametrization was used to find the optimal control profile. Gradients of the resulting nonlinear programming problem were obtained by adjoint method based on the optimal control theory.

Energetics and kinetics of Cu atoms and clusters on the Si(111)-7 × 7 surface: first-principles calculations

2016 ◽  
Vol 18 (27) ◽  
pp. 18549-18554 ◽  
Author(s):  
Xiao-Yan Ren ◽  
Chun-Yao Niu ◽  
Wei-Guang Chen ◽  
Ming-Sheng Tang ◽  
Jun-Hyung Cho
Keyword(s):  
Thin Film ◽  
Crystal Growth ◽  
First Principles ◽  
Self Assembly ◽  
Catalytic Reactions ◽  
Semiconductor Surface ◽  
First Principles Calculations ◽  
Metal Atoms ◽  
Thin Film Epitaxy ◽  
Kinetics Of

Exploring the properties of noble metal atoms and nano- or subnano-clusters on the semiconductor surface is of great importance in many surface catalytic reactions, self-assembly processes, crystal growth, and thin film epitaxy.

“Nanostructures in Thin-film Epitaxy: Exploring and Exploiting Substrate-mediated Interactions”

2004 ◽  
Vol 30 (5) ◽  
pp. 273-279 ◽  
Author(s):  
Michael L. Merrick* ◽  
Kristen A. Fichthorn
Keyword(s):  
Thin Film ◽  
Thin Film Epitaxy

scholarly journals Island Nucleation in Thin-Film Epitaxy: A First-Principles Investigation

2000 ◽  
Vol 84 (23) ◽  
pp. 5371-5374 ◽  
Author(s):  
Kristen A. Fichthorn ◽  
Matthias Scheffler
Keyword(s):  
Thin Film ◽  
First Principles ◽  
Island Nucleation ◽  
Thin Film Epitaxy

Stabilization of a h.c.p. Cu phase by thin film epitaxy on Co(1 0 0)

1990 ◽  
Vol 74 (8) ◽  
pp. 811-815 ◽  
Author(s):  
C.J. Barnes ◽  
M. Valden ◽  
A. Vuoristo
Keyword(s):  
Thin Film ◽  
Thin Film Epitaxy

Computer simulation of metal thin-film epitaxy

1996 ◽  
Vol 272 (2) ◽  
pp. 223-228 ◽  
Author(s):  
Ruoping Wang ◽  
Kristen A. Fichthorn
Keyword(s):  
Thin Film ◽  
Computer Simulation ◽  
Metal Thin Film ◽  
Thin Film Epitaxy

Reentrant Growth in Kinetic Thin-Film Deposition on Stepped Surfaces

1995 ◽  
Vol 399 ◽  
Author(s):  
Rong-Fu Xiao
Keyword(s):  
Thin Film ◽  
Monte Carlo Simulation ◽  
Deposition Temperature ◽  
Diffusion Length ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Natural Phenomenon ◽  
Two Dimensional ◽  
Stepped Surfaces ◽  
Thin Film Epitaxy

ABSTRACTWe have studied the reentrant growth in kinetic thin-film deposition on stepped surfaces using a Monte Carlo simulation. The results show that the reentrant oscillation of two dimensional nucleation growth occurs as a result of the variation of surface diffusion length with deposition temperature, and that it is a natural phenomenon in kinetic thin-film epitaxy on a substrate with a permanent step source.

Sign in / Sign up

Export Citation Format

Share Document