Monolithic Perovskite-CIGS Tandem Solar Cells via In Situ Band Gap Engineering

2015 ◽  
Vol 5 (23) ◽  
pp. 1500799 ◽  
Author(s):  
Teodor Todorov ◽  
Talia Gershon ◽  
Oki Gunawan ◽  
Yun Seog Lee ◽  
Charles Sturdevant ◽  
...  
Keyword(s):  
Solar Cells ◽  
Band Gap ◽  
Band Gap Engineering ◽  
Tandem Solar Cells

GaAsP/Si tandem solar cells: In situ study on GaP/Si:As virtual substrate preparation

2018 ◽  
Vol 180 ◽  
pp. 343-349 ◽  
Author(s):  
Agnieszka Paszuk ◽  
Oliver Supplie ◽  
Boram Kim ◽  
Sebastian Brückner ◽  
Manali Nandy ◽  
...  
Keyword(s):  
Solar Cells ◽  
Substrate Preparation ◽  
Tandem Solar Cells ◽  
In Situ Study

scholarly journals Tunable relativistic quasiparticle electronic and excitonic behavior of the FAPb(I1−xBrx)3 alloy

2020 ◽  
Vol 22 (21) ◽  
pp. 11943-11955 ◽  
Author(s):  
Zeeshan Muhammad ◽  
Peitao Liu ◽  
Rashid Ahmad ◽  
Saeid Jalali Asadabadi ◽  
Cesare Franchini ◽  
...  
Keyword(s):  
Optical Properties ◽  
Solar Cells ◽  
Band Gap ◽  
High Performance ◽  
Material Design ◽  
Tandem Solar Cells ◽  
Excitonic Properties

The quasiparticle and excitonic properties of mixed FAPb(I1−xBrx)3 0 ≤ x ≤ 1 alloys are studied. We show that Br-doping provides an efficient and controllable way to tune the band gap and optical properties, beneficial for material design of high performance tandem solar cells.

Computer-aided band gap engineering and experimental verification of amorphous silicon–germanium solar cells

2004 ◽  
Vol 81 (1) ◽  
pp. 73-86 ◽  
Author(s):  
Raul Jimenez Zambrano ◽  
Francisco A. Rubinelli ◽  
Wim M. Arnoldbik ◽  
Jatindra K. Rath ◽  
Ruud E.I. Schropp
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Band Gap ◽  
Experimental Verification ◽  
Silicon Germanium ◽  
Band Gap Engineering ◽  
Computer Aided ◽  
Amorphous Silicon Germanium

scholarly journals Wide band gap kesterite absorbers for thin film solar cells: potential and challenges for their deployment in tandem devices

2019 ◽  
Vol 3 (9) ◽  
pp. 2246-2259 ◽  
Author(s):  
Bart Vermang ◽  
Guy Brammertz ◽  
Marc Meuris ◽  
Thomas Schnabel ◽  
Erik Ahlswede ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Band Gap ◽  
Wide Band ◽  
Wide Bandgap ◽  
Thin Film Solar Cells ◽  
Wide Band Gap ◽  
Tandem Solar Cells

This study describes the potential and challenges involved with the use of wide bandgap kesterite absorbers in tandem solar cells.

High efficiency a-Si:H/a-SiGe:H tandem solar cells fabricated with the combination of V- and U-shaped band gap profiling techniques

2015 ◽  
Vol 54 (8S1) ◽  
pp. 08KB08 ◽  
Author(s):  
Sorapong Inthisang ◽  
Taweewat Krajangsang ◽  
Aswin Hongsingthong ◽  
Amornrat Limmanee ◽  
Songkiate Kittisontirak ◽  
...  
Keyword(s):  
Solar Cells ◽  
Band Gap ◽  
High Efficiency ◽  
Tandem Solar Cells ◽  
Profiling Techniques

Band-Gap Engineering of Metal Oxides for Dye-Sensitized Solar Cells

2006 ◽  
Vol 110 (43) ◽  
pp. 21899-21902 ◽  
Author(s):  
M. Dürr ◽  
S. Rosselli ◽  
A. Yasuda ◽  
G. Nelles
Keyword(s):  
Solar Cells ◽  
Metal Oxides ◽  
Band Gap ◽  
Dye Sensitized Solar Cells ◽  
Band Gap Engineering ◽  
Dye Sensitized ◽  
Sensitized Solar Cells

scholarly journals Computational Study of Inverted All-Inorganic Perovskite Solar Cells Based on CsPbIxBr3-X Absorber Layer with Band Gap of 1.78 eV

2020 ◽  
Author(s):  
Nahuel Martínez ◽  
Carlos Pinzón ◽  
Guillermo Casas ◽  
Fernando Alvira ◽  
Marcelo Cappelletti
Keyword(s):  
Solar Cells ◽  
Band Gap ◽  
High Efficiency ◽  
Defect Density ◽  
Computational Study ◽  
Perovskite Solar Cells ◽  
Absorber Layer ◽  
Inorganic Materials ◽  
Tandem Solar Cells ◽  
Inorganic Perovskite

All-inorganic perovskite solar cells (PSCs) with inverted p-i-n configuration have not yet reached the high efficiency achieved in the normal n-i-p architecture. However, the inverted all-inorganic PSC are more compatible with the fabrication of tandem solar cells. In this work, a theoretical study of all-inorganic PSCs with inverted structure ITO/HTL/CsPbI<sub>x</sub>Br<sub>3</sub>−x/ETL/Ag, has been performed by means of computer simulation. Four p‐type inorganic materials (NiO, Cu<sub>2</sub>O, CuSCN and CuI) and three n-type inorganic materials (ZnO, TiO<sub>2</sub> and SnO<sub>2</sub>) were used as hole and electron transport layers (HTL and ETL), respectively. A band gap of 1.78 eV was used for the CsPbI x Br<sub>3</sub>−x perovskite layer. The simulation results allow identifying that CuI and ZnO are the most appropriate materials as HTL and ETL, respectively. Additionally, optimized values of thickness, acceptor density and defect density in the absorber layer have been obtained for the ITO/CuI/CsPbI x Br<sub>3</sub>−x /ZnO/Ag, from which, an optimum efficiency of 21.82% was achieved. These promising theoretical results aim to improve the manufacturing process of inverted all-inorganic PSCs and to enhance the performance of perovskite–perovskite tandem solar cells. <br>

Thin Film a-Si/poly-Si Multibandgap Tandem Solar Cells With Both Absorber Layers Deposited by Hot Wire Cvd

2001 ◽  
Vol 664 ◽  
Author(s):  
R.E.I. Schropp ◽  
C.H.M. Van Der Werf ◽  
M.K. Van Veen ◽  
P.A.T.T. Van Veenendaal ◽  
R. Jimenez Zambrano ◽  
...  
Keyword(s):  
Solar Cells ◽  
Substrate Temperature ◽  
Band Gap ◽  
Steel Substrate ◽  
Light Trapping ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Tandem Solar Cells ◽  
Hydrogen Dilution ◽  
P Type

ABSTRACTThe first competitive a-Si/poly-Si multibandgap tandem cells have been made in which the two intrinsic absorber layers are deposited by Hot Wire Chemical Vapor Deposition (HWCVD). These cells consist of two stacked n-i-p type solar cells on a plain stainless steel substrate using plasma deposited n- and p-type doped layers and Hot-Wire deposited intrinsic (i) layers, where the i-layer is either amorphous (band gap 1.8 eV) or polycrystalline (band gap 1.1 eV). In this tandem configuration, all doped layers are microcrystalline and the two intrinsic layers are made by decomposing mixtures of silane and hydrogen at hot filaments in the vicinity of the substrate. For the two layers we used individually optimized parameters, such as gas pressure, hydrogen dilution ratio, substrate temperature, filament temperature, and filament material. The solar cells do not comprise an enhanced back reflector, but feature a natural mechanism for light trapping, due to the texture of the (220) oriented poly-Si absorber layer and the fact that all subsequent layers are deposited conformally. The deposition rate for the throughput limiting step, the poly-Si i-layer, is ≍ 5-6 Å/s. This layer also determines the highest substrate temperature required during the preparation of these tandem cells (500 °C). The initial efficiency obtained for these tandem cells is 8.1 %. The total thickness of the silicon nip/nip structure is only 1.1 µm.

Sign in / Sign up

Export Citation Format

Share Document