scholarly journals Tunable relativistic quasiparticle electronic and excitonic behavior of the FAPb(I1−xBrx)3 alloy

2020 ◽  
Vol 22 (21) ◽  
pp. 11943-11955 ◽  
Author(s):  
Zeeshan Muhammad ◽  
Peitao Liu ◽  
Rashid Ahmad ◽  
Saeid Jalali Asadabadi ◽  
Cesare Franchini ◽  
...  

The quasiparticle and excitonic properties of mixed FAPb(I1−xBrx)3 0 ≤ x ≤ 1 alloys are studied. We show that Br-doping provides an efficient and controllable way to tune the band gap and optical properties, beneficial for material design of high performance tandem solar cells.

2013 ◽  
Vol 329 ◽  
pp. 114-117
Author(s):  
Shuo Jin ◽  
Li Li Wu ◽  
Wen Wu Wang ◽  
Guang Gen Zeng ◽  
Liang Huan Feng ◽  
...  

CdxZn1-xTe is a promising material for tandem solar cells with a continuously adjustable band gap from 1.45eV to 2.26eV, but p-type CdxZn1-xTe with higher carrier density is rarely reported. CdxZn1-xTe thin films with Cu layers were deposited by vacuum co-evaporation in sequence and annealed in low vacuum in this paper. The compositional, structural, morphological, electrical and optical properties were studied. The results show that zinc-blended Cd0.4Zn0.6Te films with (111) preferred orientation were fabricated. Conduction type of annealed CdxZn1-xTe films with Cu layers will change from intrinsic to p-type. Cu doped CdxZn1-xTe thin films with carrier density of 1018~1019cm-3 and the band-gap of 1.89~1.93eV can be obtained. It demonstrates that Cu is an effective p-type dopant for CdxZn1-xTe thin films.


Nanophotonics ◽  
2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Rui He ◽  
Tingting Chen ◽  
Zhipeng Xuan ◽  
Tianzhen Guo ◽  
Jincheng Luo ◽  
...  

Abstract Wide-bandgap (wide-E g , ∼1.7 eV or higher) perovskite solar cells (PSCs) have attracted extensive attention due to the great potential of fabricating high-performance perovskite-based tandem solar cells via combining with low-bandgap absorbers, which is considered promising to exceed the Shockley–Queisser efficiency limit. However, inverted wide-E g PSCs with a minimized open-circuit voltage (V oc) loss, which are more suitable to prepare all-perovskite tandem devices, are still lacking study. Here, we report a strategy of adding 1,3,5-tris (bromomethyl) benzene (TBB) into wide-E g perovskite absorber to passivate the perovskite film, leading to an enhanced average V oc. Incorporation of TBB prolongs carrier lifetimes in wide-E g perovskite due to reduction of defects in perovskites and makes a better energy level matching between perovskite absorber and electron transport layer. As a result, we achieve the power conversion efficiency of 17.12% for our inverted TBB-doped PSC with an enhanced V oc of 1.19 V, compared with that (16.14%) for the control one (1.14 V).


2021 ◽  
pp. 2101662
Author(s):  
Shynggys Zhumagali ◽  
Furkan H. Isikgor ◽  
Partha Maity ◽  
Jun Yin ◽  
Esma Ugur ◽  
...  

Solar RRL ◽  
2021 ◽  
Author(s):  
Mohammad Ismail Hossain ◽  
Md. Shahiduzzaman ◽  
Ahmed Mortuza Saleque ◽  
Md. Rashedul Huqe ◽  
Wayesh Qarony ◽  
...  

Solar Energy ◽  
2021 ◽  
Vol 228 ◽  
pp. 226-234
Author(s):  
Gang Yu ◽  
Chunhui Shou ◽  
Zhenhai Yang ◽  
Haiyan He ◽  
Yongqiang Zhang ◽  
...  

Nanomaterials ◽  
2018 ◽  
Vol 8 (11) ◽  
pp. 876 ◽  
Author(s):  
Qi Qian ◽  
Lei Peng ◽  
Yu Cui ◽  
Liping Sun ◽  
Jinyan Du ◽  
...  

We systematically study, by using first-principles calculations, stabilities, electronic properties, and optical properties of GexSn1-xSe alloy made of SnSe and GeSe monolayers with different Ge concentrations x = 0.0, 0.25, 0.5, 0.75, and 1.0. Our results show that the critical solubility temperature of the alloy is around 580 K. With the increase of Ge concentration, band gap of the alloy increases nonlinearly and ranges from 0.92 to 1.13 eV at the PBE level and 1.39 to 1.59 eV at the HSE06 level. When the Ge concentration x is more than 0.5, the alloy changes into a direct bandgap semiconductor; the band gap ranges from 1.06 to 1.13 eV at the PBE level and 1.50 to 1.59 eV at the HSE06 level, which falls within the range of the optimum band gap for solar cells. Further optical calculations verify that, through alloying, the optical properties can be improved by subtle controlling the compositions. Since GexSn1-xSe alloys with different compositions have been successfully fabricated in experiments, we hope these insights will contribute to the future application in optoelectronics.


Coatings ◽  
2018 ◽  
Vol 8 (10) ◽  
pp. 329 ◽  
Author(s):  
Dong Shin ◽  
Suk-Ho Choi

It is necessary to develop semitransparent photovoltaic cell for increasing the energy density from sunlight, useful for harvesting solar energy through the windows and roofs of buildings and vehicles. Current semitransparent photovoltaics are mostly based on Si, but it is difficult to adjust the color transmitted through Si cells intrinsically for enhancing the visual comfort for human. Recent intensive studies on translucent polymer- and perovskite-based photovoltaic cells offer considerable opportunities to escape from Si-oriented photovoltaics because their electrical and optical properties can be easily controlled by adjusting the material composition. Here, we review recent progress in materials fabrication, design of cell structure, and device engineering/characterization for high-performance/semitransparent organic and perovskite solar cells, and discuss major problems to overcome for commercialization of these solar cells.


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