Predicting the Open-Circuit Voltage of CH3NH3PbI3Perovskite Solar Cells Using Electroluminescence and Photovoltaic Quantum Efficiency Spectra: the Role of Radiative and Non-Radiative Recombination

2014 ◽  
Vol 5 (3) ◽  
pp. 1400812 ◽  
Author(s):  
Wolfgang Tress ◽  
Nevena Marinova ◽  
Olle Inganäs ◽  
Mohammad. K. Nazeeruddin ◽  
Shaik M. Zakeeruddin ◽  
...  
Keyword(s):  
Solar Cells ◽  
Quantum Efficiency ◽  
Radiative Recombination ◽  
Open Circuit Voltage ◽  
Open Circuit

Reducing non-radiative recombination energy loss via a fluorescence intensifier for efficient and stable ternary organic solar cells

2021 ◽  
Author(s):  
Xuan Liu ◽  
Yang Liu ◽  
Yongfeng Ni ◽  
Ping Fu ◽  
Xuchao Wang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Energy Loss ◽  
Quantum Efficiency ◽  
Organic Solar Cells ◽  
Radiative Recombination ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Effective Strategy ◽  
Recombination Energy ◽  
Photoactive Layer

Increasing electroluminescene quantum efficiency (EQEEL) of photoactive layer to reduce non-radiative recombination energy loss (Eloss) has been demonstrated an effective strategy to improve open-circuit voltage (Voc) of organic solar cells...

Microcrystalline (Si,Ge):H Solar Cells

2003 ◽  
Vol 762 ◽  
Author(s):  
Jianhua Zhu ◽  
Vikram L. Dalal
Keyword(s):  
Solar Cells ◽  
Buffer Layer ◽  
Quantum Efficiency ◽  
Fill Factor ◽  
Open Circuit Voltage ◽  
Defect Density ◽  
Cell Structure ◽  
Open Circuit ◽  
Base Layer ◽  
Ecr Plasma

AbstractWe report on the growth and properties of microcrystalline Si:H and (Si,Ge):H solar cells on stainless steel substrates. The solar cells were grown using a remote, low pressure ECR plasma system. In order to crystallize (Si,Ge), much higher hydrogen dilution (∼40:1) had to be used compared to the case for mc-Si:H, where a dilution of 10:1 was adequate for crystallization. The solar cell structure was of the p+nn+ type, with light entering the p+ layer. It was found that it was advantageous to use a thin a-Si:H buffer layer at the back of the cells in order to reduce shunt density and improve the performance of the cells. A graded gap buffer layer was used at the p+n interface so as to improve the open-circuit voltage and fill factor. The open circuit voltage and fill factor decreased as the Ge content increased. Quantum efficiency measurements indicated that the device was indeed microcrystalline and followed the absorption characteristics of crystalline ( Si,Ge). As the Ge content increased, quantum efficiency in the infrared increased. X-ray measurements of films indicated grain sizes of ∼ 10nm. EDAX measurements were used to measure the Ge content in the films and devices. Capacitance measurements at low frequencies ( ~100 Hz and 1 kHz) indicated that the base layer was indeed behaving as a crystalline material, with classical C(V) curves. The defect density varied between 1x1016 to 2x1017/cm3, with higher defects indicated as the Ge concentration increased.

Investigating the Role of Dye Dipole on Open Circuit Voltage in Solid-State Dye-Sensitized Solar Cells

2011 ◽  
Vol 50 (6) ◽  
pp. 06GF08 ◽  
Author(s):  
Shyam S. Pandey ◽  
Kyung-Young Lee ◽  
Azwar Hayat ◽  
Yuhei Ogomi ◽  
Shuzi Hayase
Keyword(s):  
Solar Cells ◽  
Solid State ◽  
Open Circuit Voltage ◽  
Dye Sensitized Solar Cells ◽  
Open Circuit ◽  
Dye Sensitized ◽  
Sensitized Solar Cells

scholarly journals Features of model thin-film solar cells photoelectric characteristics based on a non-toxic multi-component connection CuZn2AlS4

2021 ◽  
Vol 5 (3) ◽  
pp. 242-250
Author(s):  
D. Sergeyev ◽  
K. Shunkeyev ◽  
B. Kuatov ◽  
N. Zhanturina
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Quantum Efficiency ◽  
Fill Factor ◽  
Open Circuit Voltage ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Thin Film Solar Cells ◽  
Current Voltage

In this paper, the features of the characteristics of model thin-film solar cells based on the non-toxic multicomponent compound CuZn2AlS4 (CZAS) are considered. The main parameters (open-circuit voltage, short-circuit current, fill factor, efficiency) and characteristics (quantum efficiency, current-voltage characteristic) of thin-film solar cells based on CZAS have been determined. The minimum optimal thickness of the CZAS absorber is found (1-1.25 microns). Deterioration of the performance of solar cells with an increase in operating temperature (280-400 K) is shown. It is revealed that in the wavelength range of 390-500 nm CZAS has a high external quantum efficiency, which allows its use in designs of multi-junction solar cells designed to absorb solar radiation in the specified range. It is shown that the combination of CZAS films with a buffer layer of non-toxic ZnS increases the performance of solar cells.

Simulation of Heat Loss in CZTSSe Thin Film Solar Cells: A Coupled Optical-Electrical-Thermal Modeling

2021 ◽  
Author(s):  
Soma Zandi ◽  
Mohsen Jamshidi Seresht ◽  
NIMA E. Gorji
Keyword(s):  
Solar Cells ◽  
Heat Generation ◽  
Radiative Recombination ◽  
Heat Dissipation ◽  
Open Circuit Voltage ◽  
Thermal Modeling ◽  
Surface Recombination ◽  
Open Circuit ◽  
Total Heat ◽  
Zero Bias

Abstract A coupled optical-electrical-thermal modeling has been developed to investigate the heat generation in CZTSSe solar cells via Thermalization, Joule heat, Peltier heat, Surface Recombination heat, and non-radiative recombination heat and also the heat dissipation via convective and radiative cooling. These were calculated and displayed in 2D and 3D maps either at zero bias or open-circuit voltage (V oc) conditions. At V=0, the heat is generated mainly at the junction of CZTSSe/CdS where the thermalization and Joule heats are dominantly higher compared to non-radiative (SRH and Auger) recombination heat. However, at V=V oc , the nan-radiative recombination heat becomes comparatively higher than the Joule heating whereas the thermalization remains highest as before. Apart from the bulk heating factors, we also studied the surface recombination and Peltier heat generation. The surface recombination heat is higher at V=V oc compared to at V=0 while the Peltier heat is zero at V=V oc which can be explained by looking at the energy band diagrams at these voltages. The total heat generation does not change much across the cell thickness (<5×10 9 W/m 3) as the cell is quite thin. Nevertheless, the individual impact of every heat generation factor on power-density and current-voltage characteristics of the cell reveals that the thermalization, Joule, and non-radiative recombination heats reduce the open-circuit voltage of the cell from 0.54 V to 0.49 V (∆V = 0.047 V) while the Peltier and surface recombination heat is less effective. The temperature of the cell shows a small distribution across the cell (0.01 K). However, the temperature of the initial study at 293 K increases to 315-320 K for the coupled study. At this increased temperature, the short current-density doesn’t change but the fill factor decreases from 73.8% to 71.8% and, therefore, the energy conversion efficiency of the cell falls by 11.11% (from initial 12.78% to 11.36%). All the total heat dissipation, convective, and radiation cooling follow a similar trend to the total heat generation but convective cooling is the dominant component of dissipation.

Investigating the Role of Dye Dipole on Open Circuit Voltage in Solid-State Dye-Sensitized Solar Cells

2011 ◽  
Vol 50 (6S) ◽  
pp. 06GF08 ◽  
Author(s):  
Shyam S. Pandey ◽  
Kyung-Young Lee ◽  
Azwar Hayat ◽  
Yuhei Ogomi ◽  
Shuzi Hayase
Keyword(s):  
Solar Cells ◽  
Solid State ◽  
Open Circuit Voltage ◽  
Dye Sensitized Solar Cells ◽  
Open Circuit ◽  
Dye Sensitized ◽  
Sensitized Solar Cells

scholarly journals Evaluating the role of phenethylamine iodide as a novel anti-solvent for enhancing performance of inverted planar perovskite solar cells

2020 ◽  
Vol 8 (21) ◽  
pp. 7143-7148
Author(s):  
Christos Zervos ◽  
Marinos Tountas ◽  
Konstantinos Chatzimanolis ◽  
Christos Polyzoidis ◽  
Emmanuel Kymakis
Keyword(s):  
Solar Cells ◽  
Open Circuit Voltage ◽  
Perovskite Solar Cells ◽  
Open Circuit ◽  
Post Treatment ◽  
Fabrication Process

An alternate use of PEAI for enhancing the performance of inverted perovskite solar cells is demonstrated, by employing it as an anti-solvent during the perovskite fabrication process. The results show an enhancement of the open-circuit voltage as compared to the PEAI post treatment.

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