scholarly journals ReS 2 /h‐BN/Graphene Heterostructure Based Multifunctional Devices: Tunneling Diodes, FETs, Logic Gates, and Memory

2020 ◽  
pp. 2000925
Author(s):  
Bablu Mukherjee ◽  
Ryoma Hayakawa ◽  
Kenji Watanabe ◽  
Takashi Taniguchi ◽  
Shu Nakaharai ◽  
...  
Keyword(s):  
Logic Gates ◽  
Tunneling Diodes ◽  
Multifunctional Devices

scholarly journals Multifunctional Devices and Logic Gates With Undoped Silicon Nanowires

Nano Letters ◽  
2012 ◽  
Vol 12 (6) ◽  
pp. 3074-3079 ◽  
Author(s):  
Massimo Mongillo ◽  
Panayotis Spathis ◽  
Georgios Katsaros ◽  
Pascal Gentile ◽  
Silvano De Franceschi
Keyword(s):  
Silicon Nanowires ◽  
Logic Gates ◽  
Multifunctional Devices

Nanofabricated SiO2-Si-SiO2 Resonant Tunneling Diodes

2000 ◽  
Vol 631 ◽  
Author(s):  
J. G. Fleming ◽  
E. Chow ◽  
S.-Y. Lin
Keyword(s):  
Integrated Circuits ◽  
Integrated Circuit ◽  
Resonant Tunneling ◽  
Resonant Tunneling Diodes ◽  
Resonance Tunneling ◽  
Tunneling Diodes

ABSTRACTResonance Tunneling Diodes (RTDs) are devices that can demonstrate very highspeed operation. Typically they have been fabricated using epitaxial techniques and materials not consistent with standard commercial integrated circuits. We report here the first demonstration of SiO2-Si-SiO2 RTDs. These new structures were fabricated using novel combinations of silicon integrated circuit processes.

Improvement of Single-Electron Digital Logic Gates by Utilizing Input Discretizers

2016 ◽  
Vol E99.C (2) ◽  
pp. 285-292 ◽  
Author(s):  
Tran THI THU HUONG ◽  
Hiroshi SHIMADA ◽  
Yoshinao MIZUGAKI
Keyword(s):  
Logic Gates ◽  
Single Electron ◽  
Digital Logic
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