High‐Performance Coplanar Dual‐Channel a‐InGaZnO/a‐InZnO Semiconductor Thin‐Film Transistors with High Field‐Effect Mobility

2021 ◽  
pp. 2000896
Author(s):  
Mohammad Masum Billah ◽  
Abu Bakar Siddik ◽  
Jung Bae Kim ◽  
Dong Kil Yim ◽  
Soo Young Choi ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Field Effect ◽  
High Field ◽  
High Performance ◽  
Field Effect Mobility ◽  
Dual Channel ◽  
Semiconductor Thin Film

Compressive Stressed P-Channel Polycrystalline-Silicon Thin-Film Transistors for High Field-Effect Mobility

2015 ◽  
Vol 36 (8) ◽  
pp. 793-795 ◽  
Author(s):  
Jae Hyo Park ◽  
Ki Hwan Seok ◽  
Hyung Yoon Kim ◽  
Sol Kyu Lee ◽  
Hee Jae Chae ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Field Effect ◽  
High Field ◽  
Field Effect Mobility ◽  
Silicon Thin Film

Dependence of Field-Effect Mobility on Deposition Conditions in a-Si:H TFT

1994 ◽  
Vol 336 ◽  
Author(s):  
Y. Chida ◽  
M. Kondo ◽  
G. Ganguly ◽  
A. Matsuda
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Field Effect ◽  
High Performance ◽  
High Mobility ◽  
High Electron ◽  
Field Effect Mobility ◽  
Si Substrate ◽  
High Electron Mobility ◽  
Deposition Conditions

ABSTRACTHigh electron Mobility (over 3 cm2/Vs) thin film transistors (TFTs) have been fabricated using a-Si:H on thermally oxidized crystalline Si substrate. The procedures for fabricating the high performance TFTs are presented and the possible reasons for the high mobility are discussed.

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