Integration of High‐Performance Cost‐Effective Copper‐Metal‐Organic‐Nanocluster‐based Gate Dielectric for Next‐Generation CMOS Applications

2021 ◽  
Vol 7 (4) ◽  
pp. 2000835
Author(s):  
Prachi Gupta ◽  
Rudra Kumar ◽  
Satinder K. Sharma
Author(s):  
Davood Taherinia ◽  
Seyyed Heydar Moravvej ◽  
Mohammad Moazzeni ◽  
Elham Akbarzadeh

The development of efficient and cost-effective catalysts for the oxygen evolution reaction is highly desirable for applications that are based on sustainable and clean technologies. In this study, we report...


Nanoscale ◽  
2020 ◽  
Vol 12 (24) ◽  
pp. 13028-13033 ◽  
Author(s):  
Yan Wu ◽  
Liya Ge ◽  
Andrei Veksha ◽  
Grzegorz Lisak

A highly active and cost-effective ORR catalyst was made from metal–organic frameworks and shows an excellent ORR performance, comparable to that of commercial Pt/C.


2021 ◽  
Vol 13 (1) ◽  
Author(s):  
Zhengqing Ye ◽  
Ying Jiang ◽  
Li Li ◽  
Feng Wu ◽  
Renjie Chen

AbstractMetal–organic framework (MOF)-based materials with high porosity, tunable compositions, diverse structures, and versatile functionalities provide great scope for next-generation rechargeable battery applications. Herein, this review summarizes recent advances in pristine MOFs, MOF composites, MOF derivatives, and MOF composite derivatives for high-performance sodium-ion batteries, potassium-ion batteries, Zn-ion batteries, lithium–sulfur batteries, lithium–oxygen batteries, and Zn–air batteries in which the unique roles of MOFs as electrodes, separators, and even electrolyte are highlighted. Furthermore, through the discussion of MOF-based materials in each battery system, the key principles for controllable synthesis of diverse MOF-based materials and electrochemical performance improvement mechanisms are discussed in detail. Finally, the major challenges and perspectives of MOFs are also proposed for next-generation battery applications.


2013 ◽  
Vol 537 ◽  
pp. 243-246
Author(s):  
Xiang Xue Xu ◽  
Wan Chen Xu ◽  
Yue Ling Bai ◽  
Chuan Bin Cai ◽  
Jian Hui Fang

Chemical solution-deposited (CSD) is a cost-effective non-vacuum method for YBCO coated conductor fabrication. We developed a new fluorine-free metal-organic deposition (MOD) method with metal acetates, propionic acid and xylene as the starting materials. Using this non-fluorine MOD method, we were able to get high performance YBCO superconducting films within a shortened heat treatment time, which was reduced by at Least 5 h in comparison with that for pyrolysis-annealing non-fluorine MOD process. Superconducting property, with a critial current density (Jc) over 0.55MA/cm2at 77K, self-field has been obtained for 380 nm epitaxial YBCO thin films on (00l) LaAlO3(LAO) single crystal substrate. Owing to the low price of starting materials and shorter heat treatment time, fluorine-free MOD method is a very effective and cost-cutting process.


2004 ◽  
Vol 811 ◽  
Author(s):  
J. Gutt ◽  
G.A. Brown ◽  
Yoshi Senzaki ◽  
Seung Park

AbstractThe International Technology Roadmap for Semiconductors (ITRS) has projected that continued scaling of planar CMOS technology to the 65nm node and beyond will require development of high-k films for transistor gate dielectric applications to allow further scaling of overall device sizes according to Moore's Law [1]. Researchers have recently been studying hafnium-based high-k dielectrics as an alternative to SiO2 [2]. The method of deposition of these films has been found to impact the applicability of the films for both low standby power and high performance applications [3]. Atomic Layer Deposition (ALD) has been among the more widely studied deposition techniques for these films, but previous work has emphasized ALD utilizing inorganic precursors [4]. In this paper, we shall describe a process in which hafnium oxide and hafnium silicate films were deposited from alternating pulses of volatile metal-organic Hf/Si liquid precursors and ozone on 200mm diameter Si substrates using a single wafer ALD system. Electrical characterization of the films is presented, including equivalent oxide thickness (EOT), gate leakage, and electron mobility data, showing an achievement of EOT's ranging from 1.19 to 1.69 nm with high field mobilities from 74% to more than 90% of that of SiO2 (2.1 nm film), and Jg in the range of 80mA to 3 A/cm2.


2020 ◽  
Vol 10 (22) ◽  
pp. 8252
Author(s):  
M. M. Hafizur Rahman ◽  
Mohammed Al-Naeem ◽  
Mohammed N. M. Ali ◽  
Abu Sufian

In order to fulfill the increasing demand for computation power to process a boundless data concurrently within a very short time or real-time in many areas such as IoT, AI, machine learning, smart grid, and big data analytics, we need exa-scale or zetta-scale computation in the near future. Thus, to have this level of computation, we need a massively parallel computer (MPC) system that shall consist of millions of nodes; and, for the interconnection of these massive numbers of nodes, conventional topologies are infeasible. Thus, a hierarchical interconnection network (HIN) is a rational way to connect huge nodes. Through this article, we are proposing a new HIN, which is a tori-connected flattened butterfly network (TFBN) for the next generation MPC system. Numerous basic modules are hierarchically interconnected as a toroidal connection, whereby the basic modules are flattened butterfly networks. We have studied the network architecture, static network performance, and static cost-effectiveness of the proposed TFBN in detail; and compared static network and cost-effectiveness performance of the TFBN to those of TTN, torus, TESH, and mesh networks. It is depicted that TFBN possesses low diameter and average distance, high arc connectivity, and temperate bisection width. It also has better cost-effectiveness and cost-performance trade-off factor compared to those of TTN, torus, TESH, and mesh networks. The only shortcoming is that the complexity of wiring of the TFBN is higher than that of those networks; this is because the basic module necessitates some extra short length link to form the flattened butterfly network. Therefore, TFBN is a high performance and cost-effective HIN, and it will be a good option for the next generation MPC system.


2019 ◽  
Vol 7 (4) ◽  
pp. 1725-1736 ◽  
Author(s):  
Richa Rajak ◽  
Mohit Saraf ◽  
Shaikh M. Mobin

A robust 2D heterostructure of heterobimetallic Na/Zn-MOF and rGO can be a promising alternative electrode material for next generation supercapacitors.


2016 ◽  
Vol 94 (12) ◽  
pp. 1109-1118 ◽  
Author(s):  
Christopher Lambert ◽  
Yu Mao ◽  
Yanzhen Zheng ◽  
Xia Tao ◽  
P. Hu ◽  
...  

Dye-sensitized solar cell (DSSC) is currently a promising technology that makes solar energy efficient and cost-effective to harness. In DSSC, metal-free dyes such as indoline-containing D149 and D205 have been proven to be potential alternatives for traditional metal organic dyes. In this work, a DFT/TDDFT characterization for D149 and D205 was carried out using different functionals, including B3LYP, MPW1K, CAM–B3LYP, and PBE0. Three different conformers for D149 and four different conformers for D205 were identified and calculated in a vacuum. The performance of different functionals on calculating the maximum absorbance of the dyes in a vacuum and five common solvents (acetonitrile, chloroform, ethanol, methanol, and THF) were examined and compared to determine the suitable computational setting for predicting properties of these two dyes. Furthermore, deprotonated D149 and D205 in solvents were also considered, and the highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) were calculated, which elucidates the substitution effect on the rhodanine ring of D149 and D205 dyes on their efficiency. Finally, D149 and D205 molecules were confirmed to be firmly anchored on ZnO surface by periodic DFT calculations. These results shed light on the design of new, highly efficient metal-free dyes.


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