scholarly journals Memory Devices: An Electric‐Field‐Controlled High‐Speed Coexisting Multibit Memory and Boolean Logic Operations in Manganite Nanowire via Local Gating (Adv. Electron. Mater. 6/2019)

2019 ◽  
Vol 5 (6) ◽  
pp. 1970029
Author(s):  
Qian Shi ◽  
Fengxian Jiang ◽  
Yang Yu ◽  
Hanxuan Lin ◽  
Yunfang Kou ◽  
...  
Keyword(s):  
Electric Field ◽  
High Speed ◽  
Boolean Logic ◽  
Memory Devices ◽  
Logic Operations

An Electric‐Field‐Controlled High‐Speed Coexisting Multibit Memory and Boolean Logic Operations in Manganite Nanowire via Local Gating

2019 ◽  
Vol 5 (6) ◽  
pp. 1900020 ◽  
Author(s):  
Qian Shi ◽  
Fengxian Jiang ◽  
Yang Yu ◽  
Hanxuan Lin ◽  
Yunfang Kou ◽  
...  
Keyword(s):  
Electric Field ◽  
High Speed ◽  
Boolean Logic ◽  
Logic Operations

scholarly journals Digital logic gates in soft, conductive mechanical metamaterials

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Charles El Helou ◽  
Philip R. Buskohl ◽  
Christopher E. Tabor ◽  
Ryan L. Harne
Keyword(s):  
Integrated Circuits ◽  
Electronic Materials ◽  
Polymer Networks ◽  
Conductive Polymer ◽  
Network Connectivity ◽  
Logic Gates ◽  
Boolean Logic ◽  
Digital Logic ◽  
Mechanical Metamaterials ◽  
Logic Operations

AbstractIntegrated circuits utilize networked logic gates to compute Boolean logic operations that are the foundation of modern computation and electronics. With the emergence of flexible electronic materials and devices, an opportunity exists to formulate digital logic from compliant, conductive materials. Here, we introduce a general method of leveraging cellular, mechanical metamaterials composed of conductive polymers to realize all digital logic gates and gate assemblies. We establish a method for applying conductive polymer networks to metamaterial constituents and correlate mechanical buckling modes with network connectivity. With this foundation, each of the conventional logic gates is realized in an equivalent mechanical metamaterial, leading to soft, conductive matter that thinks about applied mechanical stress. These findings may advance the growing fields of soft robotics and smart mechanical matter, and may be leveraged across length scales and physics.

DESIGNING OF ALL-OPTICAL TRI-STATE LOGIC SYSTEM WITH THE HELP OF OPTICAL NONLINEAR MATERIAL

2008 ◽  
Vol 17 (03) ◽  
pp. 315-328 ◽  
Author(s):  
TANAY CHATTOPADHYAY ◽  
GOUTAM KUMAR MAITY ◽  
JITENDRA NATH ROY
Keyword(s):  
High Speed ◽  
Optical Switch ◽  
Digital Signal ◽  
Optical Signal ◽  
Nonlinear Material ◽  
Digital Signals ◽  
Photonic Networks ◽  
Optical Nonlinear Material ◽  
All Optical ◽  
Logic Operations

Nonlinear optics has been of increased interest for all-optical signal, data and image processing in high speed photonic networks. The application of multi-valued (nonbinary) digital signals can provide considerable relief in transmission, storage and processing of a large amount of information in digital signal processing. Here, we propose the design of an all-optical system for some basic tri-state logic operations (trinary OR, trinary AND, trinary XOR, Inverter, Truth detector, False detector) which exploits the polarization properties of light. Nonlinear material based optical switch can play an important role. Tri-state logic can play a significant role towards carry and borrow free arithmetic operations. The principles and possibilities of the design of nonlinear material based tri-state logic circuits are proposed and described.

scholarly journals MODELLING OF SPINTRONIC DEVICES FOR APPLICATION IN RANDOM ACCESS MEMORY

2020 ◽  
Vol 10 (1) ◽  
pp. 62-65
Author(s):  
Ruslan Politanskyi ◽  
Maria Vistak ◽  
Andriy Veryga ◽  
Tetyana Ruda
Keyword(s):  
Error Probability ◽  
High Speed ◽  
Scientific Research ◽  
Single Domain ◽  
Memory Devices ◽  
Magnetization Process ◽  
Recording Time ◽  
Bit Error Probability ◽  
Recording Process ◽  
Wide Range

The article analyzes the physical processes that occur in spin-valve structures during recording process which occurs in high-speed magnetic memory devices. Considered are devices using magnetization of the ferromagnetic layer through transmitting magnetic moment by polarized spin (STT-MRAM). Basic equations are derived to model the information recording process in the model of symmetric binary channel. Because the error probability arises from the magnetization process, a model of the magnetization process is formed, which is derived from the Landau-Lifshitz-Gilbert equations under the assumption of a single-domain magnet. The choice of a single-domain model is due to the nanometer size of the flat magnetic layer. The developed method of modeling the recording process determines the dependence of such characteristics as the bit error probability and the rate of recording on two important technological characteristics of the recording process: the value of the current and its duration. The end result and the aim of the simulation is to determine the optimal values of the current and its duration at which the speed of the recording process is the highest for a given level of error probability. The numerical values of the transmission rate and error probability were obtained for a wide range of current values (10–1500 μA) and recording time of one bit (1–70 ns), and generally correctly describe the process of information transmission. The calculated data were compared with the technical characteristics of existing industrial devices and devices which are the object of the scientific research. The resulting model can be used to simulate devices using different values of recording currents: STT-MRAM series chips using low current values (500-100 μA), devices in the stage of technological design and using medium current values (100–500 μA) and devices that are the object of experimental scientific research and use high currents (500–1000 μA). The model can also be applied to simulate devices with different data rates, which have different requirements for both transmission speed and bit error probability. In this way, the model can be applied to both high-speed memory devices in computer systems and signal sensors, which are connected to sensor networks or connected to the IoT.

Low resistive tungsten dual polymetal gate process for high speed and high density memory devices

2007 ◽  
Author(s):  
Yong Soo Kim ◽  
Kwan-Yong Lim ◽  
Min-Gyu Sung ◽  
Soo-Hyun Kim ◽  
Hong-Seon Yang ◽  
...  
Keyword(s):  
High Speed ◽  
High Density ◽  
Memory Devices

TSSM: Three-State Switchable Memristor Model Based on Ag/TiOx Nanobelt/Ti Configuration

2021 ◽  
Vol 31 (07) ◽  
pp. 2130020
Author(s):  
Xiaoyue Ji ◽  
Donglian Qi ◽  
Zhekang Dong ◽  
Chun Sing Lai ◽  
Guangdong Zhou ◽  
...  
Keyword(s):  
High Efficiency ◽  
Response Speed ◽  
Differential Resistance ◽  
Fast Response ◽  
Boolean Logic ◽  
Behavioral Characteristics ◽  
Model Based ◽  
Geometry Nonlinearity ◽  
Neuromorphic System ◽  
Logic Operations

Memristive technologies are attractive due to their nonvolatility, high density, low power, nanoscale geometry, nonlinearity, binary/multiple memory capacity, and negative differential resistance. For memristive devices, a model corresponding with practical behavioral characteristics is highly favorable for the realization of its neuromorphic system and applications. In this paper, we propose a novel memristor model based on the Ag/TiOx nanobelt/Ti configuration, which can reflect three different states (i.e. original stage, transition stage, and resistive switching state) of the physical memristor with a satisfactory fitting precision (greater than 99.88%). Meanwhile, this work gives (1) an insight onto the electrical characteristics of the memristor model under different humidity conditions; (2) the influence of the water molecular concentration on the memristor behavior, which is of importance for the memristor fabrication and subsequent applications. For verification purposes, the proposed three-state switchable memristor is applied into the memristor-based logic implementation. The experimental results demonstrate that the constructed circuit is able to realize basic Boolean logic operations with fast response speed and high efficiency.

Electric-field control of field-free spin-orbit torque switching via laterally modulated Rashba effect in Pt/Co/AlOx structures

2020 ◽  
Author(s):  
Min-Gu Kang ◽  
Jong-Guk Choi ◽  
Jimin Jeong ◽  
Jae Yeol Park ◽  
Hyeon-Jong Park ◽  
...  
Keyword(s):  
Electric Field ◽  
Coupling Effect ◽  
Spin Orbit ◽  
Rashba Effect ◽  
Oxide Interface ◽  
Electrical Control ◽  
Perpendicular Magnetization ◽  
Field Control ◽  
Out Of Plane ◽  
Logic Operations

Abstract Spin-orbit coupling effect in structures with broken inversion symmetry, known as the Rashba effect, facilitates spin-orbit torques (SOTs) in heavy metal/ferromagnet/oxide structures, along with the spin Hall effect. Electric-field control of the Rashba effect is established for semiconductor interfaces, but it is challenging in structures involving metals owing to the screening effect. Here, we report that the Rashba effect in Pt/Co/AlOx structures is laterally modulated by electric voltages, generating out-of-plane SOTs. This enables field-free switching of the perpendicular magnetization and electrical control of the switching polarity. Changing the gate oxide reverses the sign of out-of-plane SOT while maintaining the same sign of voltage-controlled magnetic anisotropy, which confirms the Rashba effect at the Co/oxide interface is a key ingredient of the electric-field modulation. The electrical control of SOT switching polarity in a reversible and non-volatile manner can be utilized for programmable logic operations in spintronic logic-in-memory devices.

scholarly journals Dielectrophoretic classification of fibres: principles and application to glass fibres suspended in air

2019 ◽  
Vol 213 ◽  
pp. 02053
Author(s):  
Frantisek Lizal ◽  
Milan Maly ◽  
Jakub Elcner ◽  
Arpad Farkas ◽  
Ondrej Pech ◽  
...  
Keyword(s):  
Electric Field ◽  
High Speed ◽  
Deposition Velocity ◽  
Uniform Electric Field ◽  
Electrical Mobility ◽  
Mobility Separation ◽  
Neutral Particles ◽  
Naturally Occurring ◽  
Two Parameters

Particles exposed to an electric field experience forces that influence their movement. This effect can be used for filtration of air, or for size classification of aerosols. The motion of charged particles in a non-uniform electric field is called electrophoresis. Two processes are involved in this phenomenon: 1) charging of particles and 2) electrical mobility separation. If fibres are exposed to electrophoresis, they are separated on the basis of two parameters: diameter and length. Regrettably, as naturally occurring fibres are polydisperse both in diameter and length, the electrophoresis is not very efficient in length classification. In contrast, dielectrophoresis is the motion of electrically neutral particles in a non-uniform electric field due to the induced charge separation within the particles. As deposition velocity of fibres induced by dielectrophoretic force strongly depends on length and only weakly on diameter, it can be used for efficient length classification. Principles of length classification of conducting and non-conducting fibres are presented together with design of a fibre classifier. Lastly, images of motion of fibres recorded by high-speed camera are depicted.

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