Inner‐Evaporator Modification of Low‐Cost Metal Electrodes of Organic Field‐Effect Transistors by 2D Polyporphyrin

2019 ◽  
Vol 5 (10) ◽  
pp. 1900447 ◽  
Author(s):  
Kongyang Yi ◽  
Xiaosong Chen ◽  
Yan Zhao ◽  
Yunqi Liu ◽  
Dacheng Wei
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Low Cost ◽  
Organic Field Effect Transistors ◽  
Metal Electrodes

Organic Materials for Multifunctional Transistor-Based Devices

2002 ◽  
Vol 725 ◽  
Author(s):  
H.E. Katz ◽  
T. Someya ◽  
B. Crone ◽  
X.M. Hong ◽  
M. Mushrush ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Low Cost ◽  
Organic Field Effect Transistors ◽  
Large Area ◽  
Microprocessor Technology ◽  
Silicon Based ◽  
Electronic Ink ◽  
Made In ◽  
Charge Channel

Organic field-effect transistors (OFETs) are “soft material” versions of accumulationmode silicon-based FETs, where a gate field across a dielectric induces a conductive charge channel at the interface of the dielectric with a semiconductor, between source and drain electrodes. Charge carrier mobilities >0.01 and on/off ratios >10,000 are routinely obtained, adequate for a few specialized applications such as electrophoretic pixel switches but well below standards established for silicon microprocessor technology. Still, progress that has been made in solution-phase semiconductor deposition and the printing of contacts and dielectrics stimulates the development of OFET circuits for situations where extreme low cost, large area, and mechanical flexibility are important. Circuits with hundreds of OFETs have been demonstrated and a prototype OFETcontrolled black-on-white “electronic ink” sign has been fabricated.

High Performance Organic Field-Effect Transistors and Integrated Inverters

2001 ◽  
Vol 665 ◽  
Author(s):  
A. Ullmann ◽  
J. Ficker ◽  
W. Fix ◽  
H. Rost ◽  
W. Clemens ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Low Cost ◽  
Drain Current ◽  
Organic Field Effect Transistors ◽  
Metal Contacts ◽  
Gate Electrodes ◽  
Polymer Semiconductors ◽  
Set Up

ABSTRACTIntegrated plastic circuits (IPCs) will become an integral component of future low cost electronics. For low cost processes IPCs have to be made of all-polymer Transistors. We present our recent results on fabrication of Organic Field-Effect Transistors (OFETs) and integrated inverters. Top-gate transistors were fabricated using polymer semiconductors and insulators. The source-drain structures were defined by standard lithography of Au on a flexible plastic film, and on top of these electrodes, poly(3-alkylthiophene) (P3AT) as semiconductor, and poly(4-hydroxystyrene) (PHS) as insulator were homogeneously deposited by spin-coating. The gate electrodes consist of metal contacts. With this simple set-up, the transistors exhibit excellent electric performance with a high source-drain current at source - drain and gate voltages below 30V. The characteristics show very good saturation behaviour for low biases and are comparable to results published for precursor pentacene. With this setup we obtain a mobility of 0.2cm2/Vs for P3AT. Furthermore, we discuss organic integrated inverters exhibiting logic capability. All devices show shelf-lives of several months without encapsulation.

CNTFET Gas Sensors Using SWCNT Mats: Method for Low-cost Fabrication, Solution to Improve Selectivity, Experimental Results using Interfering Agents

2009 ◽  
Vol 1204 ◽  
Author(s):  
Paolo Bondavalli ◽  
Louis Gorintin ◽  
Pierre Legagneux ◽  
Didier Pribat ◽  
Laurent Caillier ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Gas Sensors ◽  
Field Effect ◽  
Gas Sensing ◽  
Field Effect Transistors ◽  
Low Cost ◽  
Experimental Results ◽  
Flexible Substrates ◽  
Metal Electrodes ◽  
Sensing Applications

AbstractThe first paper showing the great potentiality of Carbon Nanotubes Field Effect transistors (CNTFETs) for gas sensing applications was published in 2000 [1]. It has been demonstrated that the performances of this kind of sensors are extremely interesting: a sensitivity of around 100ppt (e.g. for NO2 [2]) has been achieved in 2003 and several techniques to improve selectivity have been tested with very promising results [2]. The main issues that have not allowed, up to now, these devices to strike more largely the market of sensors, have been the lack of an industrial method to obtain low-cost devices, a demonstration of their selectivity in relevant environments and finally a deeper study on the effect of humidity and the possible solutions to reduce it. This contribution deals with CNTFETs based sensors fabricated using air-brush technique deposition on large surfaces. Compared to our last contribution [3], we have optimized the air-brush technique in order to obtain high performances transistors (Log(Ion)/Log(Ioff) ∼ 5/6) with highly reproducible characteristics : this is a key point for the industrial exploitation. We have developed a machine which allows us the dynamic deposition on heated substrates of the SWCNT solutions, improving dramatically the uniformity of the SWCNT mats. We have performed tests using different solvents that could be adapted as a function of the substrates (e.g. flexible substrates). Moreover these transistors have been achieved using different metal electrodes (patented approach [4]) in order to improve selectivity. Results of tests using NO2, NH3 with concentrations between ∼ 1ppm and 10ppm will be shown during the meeting.

scholarly journals A Rapid, Low‐Cost, and Scalable Technique for Printing State‐of‐the‐Art Organic Field‐Effect Transistors

2016 ◽  
Vol 1 (5) ◽  
pp. 1600090 ◽  
Author(s):  
Inés Temiño ◽  
Freddy G. Del Pozo ◽  
M. R. Ajayakumar ◽  
Sergi Galindo ◽  
Joaquim Puigdollers ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
State Of The Art ◽  
Low Cost ◽  
Organic Field Effect Transistors

scholarly journals Solution-processed n-type fullerene field-effect transistors prepared using CVD-grown graphene electrodes: improving performance with thermal annealing

2015 ◽  
Vol 17 (9) ◽  
pp. 6635-6643 ◽  
Author(s):  
Yong Jin Jeong ◽  
Dong-Jin Yun ◽  
Jaeyoung Jang ◽  
Seonuk Park ◽  
Tae Kyu An ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Low Cost ◽  
Organic Field Effect Transistors ◽  
Organic Electronic ◽  
Solution Processed ◽  
Flexible Devices ◽  
Significant Interest ◽  
Grown Graphene

Solution-processed organic field effect transistors (OFETs) have generated significant interest as key elements for use in all-organic electronic applications aimed at realizing low-cost, lightweight, and flexible devices.

High-Performance Low-Cost Organic Field-Effect Transistors with Chemically Modified Bottom Electrodes

2006 ◽  
Vol 128 (51) ◽  
pp. 16418-16419 ◽  
Author(s):  
Chong-an Di ◽  
Gui Yu ◽  
Yunqi Liu ◽  
Xinjun Xu ◽  
Dacheng Wei ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Low Cost ◽  
Organic Field Effect Transistors ◽  
Chemically Modified
Sign in / Sign up

Export Citation Format

Share Document