scholarly journals Hybrid-RRAM toward Next Generation of Nonvolatile Memory: Coupling of Oxygen Vacancies and Metal Ions

2018 ◽  
Vol 5 (2) ◽  
pp. 1800658 ◽  
Author(s):  
Gilbert Sassine ◽  
Cécile Nail ◽  
Philippe Blaise ◽  
Benoit Sklenard ◽  
Mathieu Bernard ◽  
...  
Keyword(s):  
Metal Ions ◽  
Nonvolatile Memory ◽  
Oxygen Vacancies ◽  
Next Generation

Electrical Properties of TaOx Thin Films for ReRAM Prepared by Reactive RF Magnetron Sputtering Method

2010 ◽  
Vol 1250 ◽  
Author(s):  
Natsuki Fukuda ◽  
Hidenao Kurihara ◽  
Kazumasa Horita ◽  
Yoshiaki Yoshida ◽  
Yutaka Kokaze ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Flash Memory ◽  
Nonvolatile Memory ◽  
Scaling Limit ◽  
Rf Magnetron Sputtering ◽  
Perovskite Oxides ◽  
Next Generation ◽  
Forming Process ◽  
Binary Oxides ◽  
Reactive Rf Magnetron Sputtering

AbstractRecently the Flash Memory is scaling limit, Thus the Memory of various types is now under study for the next generation large capacity nonvolatile memory. Resistance random access memory (ReRAM) is attracts much attention due to its advantage for integration in the next generation nonvolatile memory, because it is depend on scaling by lithography compared with the Flash Memory of capacity type. The material for ReRAM is classified roughly into binary oxides and perovskite oxides. Several binary oxides such as a TaOx have the advantage for low-temperature process and low-cost materials compared with perovskite oxides such as a (Pr,Ca)MnO3 (PCMO). In this study, TaOx film with the thickness of 10nm were prepared by reactive RF magnetron sputtering on 8inch-Pt/Si substrate using a Ta metal target in oxygen ambient. The sputtering system was the multi chamber type mass production tool. The TaOx thin film was amorphous phase as a result of measurement by X-ray diffraction meter. Ta top electrodes with 50 um diameters were deposited on the surface of TaOx layer by the DC sputtering method using a shadow mask. The “Forming” voltage of TaOx-ReRAM was 5.0V. After “Forming” process, the “Set” and “Reset” voltage were 3.0V and –3.0V respectively. It has good switching properties with large on/off resistance ratio above 1,000.

(Invited) ALD of Phase Change and Threshold Switching Materials for Next-Generation Nonvolatile Memory Devices

2020 ◽  
Vol MA2020-02 (23) ◽  
pp. 1684-1684
Author(s):  
Valerio Adinolfi ◽  
Ryan Clarke ◽  
Mario Laudato ◽  
Scott Jewhurst ◽  
Martin McBriarty ◽  
...  
Keyword(s):  
Phase Change ◽  
Nonvolatile Memory ◽  
Memory Devices ◽  
Next Generation ◽  
Threshold Switching ◽  
Nonvolatile Memory Devices

Ferroelectric thin films on silicon carbide for next-generation nonvolatile memory and sensor devices

2004 ◽  
Vol 469-470 ◽  
pp. 444-449 ◽  
Author(s):  
Mikael Östling ◽  
Sang-Mo Koo ◽  
Carl-Mikael Zetterling ◽  
Sergey Khartsev ◽  
Alex Grishin
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Nonvolatile Memory ◽  
Ferroelectric Thin Films ◽  
Next Generation ◽  
Sensor Devices

Unveiling the benefits of potassium doping on the structural integrity of Li–Mn-rich layered oxides during prolonged cycling by dual-mode EPR spectroscopy

2019 ◽  
Vol 21 (43) ◽  
pp. 24017-24025 ◽  
Author(s):  
Jianyin Wang ◽  
Mengchu Yang ◽  
Chong Zhao ◽  
Bei Hu ◽  
Xiaobing Lou ◽  
...  
Keyword(s):  
Transition Metal ◽  
Metal Ions ◽  
Epr Spectroscopy ◽  
Oxygen Vacancies ◽  
Structural Integrity ◽  
Transition Metal Ions ◽  
Layered Oxides ◽  
Dual Mode

The migration of transition-metal ions and oxygen vacancies in the Li1.2Mn0.6Ni0.2O2 cathode is mitigated after K+ bulk doping.

scholarly journals New Security Improvements in Next-Generation Passive Optical Networks Stage 2

2019 ◽  
Vol 9 (20) ◽  
pp. 4430 ◽  
Author(s):  
Vlastimil Clupek ◽  
Tomas Horvath ◽  
Petr Munster ◽  
Vaclav Oujezsky
Keyword(s):  
Optical Networks ◽  
Nonvolatile Memory ◽  
Signal Transmission ◽  
Passive Optical Networks ◽  
Activation Process ◽  
Next Generation ◽  
Transmission Method ◽  
International Telecommunication Union ◽  
Verification Methods ◽  
Upstream Direction

Passive optical networks are currently the most promising solution for access networks. These networks rely on broadcast signal distribution in the downstream direction and unicast signal transmission in the upstream direction. The upstream direction is controlled by optical line termination (OLT). The broadcast transmission method increases security vulnerability because the attacker is able to connect his/her modified optical network unit (ONU) to the free port of the splitter (commonly in the basement). We present the concept for the activation process of ONUs based on physical unclonable function (PUF) for next-generation passive optical networks stage 2 (NG-PON2). The use of PUF increases security in the NG-PON2. Furthermore, the registration identifier (ID) is not stored in a nonvolatile memory, in comparison with the common solution defined by the International Telecommunication Union (ITU) recommendation G.989.3. An attacker cannot perform a reverse engineering attack to obtain the registration ID. For this reason, the attacker cannot clone an ONU. We proposed security improvements that involve authentication, encryption, integrity protection, and data origin verification methods in the NG-PON2. Our model uses the standard implementation of the transmission convergence layer of NG-PON2 with the new physical layer operations, administration, and maintenance (PLOAM) messages. The recommendation G.989.3 allows specifying own PLOAM messages since not all IDs are used in the current specification.

scholarly journals Association of oxygen vacancies with impurity metal ions in lead titanate

2007 ◽  
Vol 76 (17) ◽  
Author(s):  
Paul Erhart ◽  
Rüdiger-Albert Eichel ◽  
Petra Träskelin ◽  
Karsten Albe
Keyword(s):  
Metal Ions ◽  
Lead Titanate ◽  
Oxygen Vacancies ◽  
Impurity Metal

scholarly journals High-performance Ni/Yb2O3/TaN Programmable Memory Cell for Nonvolatile Memory Applications

2012 ◽  
pp. 74-77
Author(s):  
Somnath Mondal ◽  
Fa-Hsyang Chen ◽  
Tung-Ming Pan
Keyword(s):  
Resistive Switching ◽  
Nonvolatile Memory ◽  
High Performance ◽  
Sandwich Structure ◽  
Oxygen Vacancies ◽  
Memory Cell ◽  
Switching Behavior ◽  
Electrical Performance ◽  
Data Retention ◽  
Memory Applications

Resistive switching in Ni/Yb2O3/TaN programmable memory cells was investigated. We proposed a rearrangement of oxygen vacancies under electric field plays role in resistive switching. Under negative bias, oxygen vacancies or other metallic defects migrate through Yb2O3 oxide and SET occurs. A reproducible resistance switching behavior was observed with high resistance ratio of about 105 with excellent data retention, and good immunity to read disturbance, are also revealed. In particular, the simple sandwich structure and excellent electrical performance of the memory cell making them ideal for the basis for highspeed, high-density, nonvolatile memory applications.

Nanofragmentation Controlled by a Shock-Induced Phase Transition in Mullite Related Ceramics and its Application

2012 ◽  
Vol 706-709 ◽  
pp. 717-722 ◽  
Author(s):  
T. Atou ◽  
N. Kawai ◽  
K. Yubuta ◽  
S. Ito ◽  
M. Kikuchi
Keyword(s):  
Crystal Structure ◽  
Phase Transition ◽  
Aluminum Alloy ◽  
Amorphous Phase ◽  
Comparative Studies ◽  
Oxygen Vacancies ◽  
Next Generation ◽  
Structural Effects ◽  
Grain Sizes ◽  
Impact Experiments

Mullite (3Al2O3•2SiO2) undergoes a phase transition at 30 GPa with forming aligned nanocrystalline fragments in an amorphous phase. The direction of the crystal axes of mullite nanocrystals with the grain sizes less than 10 nm is that preserved from the starting specimen. To clarify the mechanism of the nanofragmentation in mullite, compositional and structural effects are investigated by comparative studies using several mullite-related aluminosilicates. Consequently, we proposed that the oxygen vacancies in the crystal structure in mullite play an important role to formation of the nanofragmentation textures. Also, we performed impact experiments using mullite as a bumper material, simulating a Whipple bumper shield for spacecrafts. Damage of impact could be considerably less with mullite bumper shield than with aluminum alloy bumper shield, suggesting that mullite could be an candidate for a Whipple bumper materials in the next generation.

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