Extremely Light Carrier‐Effective Mass in a Distorted Simple Metal Oxide

2018 ◽  
pp. 1800504
Author(s):  
Gowoon Kim ◽  
Yu‐Qiao Zhang ◽  
Taewon Min ◽  
Hoyoung Suh ◽  
Jae Hyuck Jang ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Effective Mass ◽  
Simple Metal ◽  
Carrier Effective Mass ◽  
Simple Metal Oxide

Kinetics and adsorption calculations: insights into the MgO-catalyzed detoxification of simulants of organophosphorus biocides

2020 ◽  
Vol 8 (36) ◽  
pp. 19011-19021
Author(s):  
Gizelle I. Almerindo ◽  
Suelen C. Buratto ◽  
Eduardo H. Wanderlind ◽  
Lucas M. Nicolazi ◽  
Patrícia Sangaletti ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Simple Metal ◽  
Simple Metal Oxide

Optimization of the catalytic detoxification of a toxic organophosphorus biocide employing a simple metal oxide.

scholarly journals Laser energy tuning of carrier effective mass and thermopower in epitaxial oxide thin films

2012 ◽  
Vol 100 (16) ◽  
pp. 162106 ◽  
Author(s):  
A. I. Abutaha ◽  
S. R. Sarath Kumar ◽  
H. N. Alshareef
Keyword(s):  
Thin Films ◽  
Effective Mass ◽  
Laser Energy ◽  
Oxide Thin Films ◽  
Carrier Effective Mass ◽  
Epitaxial Oxide ◽  
Energy Tuning

Rationally optimized carrier effective mass and carrier density lead to high average ZT value in n-type PbSe

2021 ◽  
Author(s):  
Yu Xiao ◽  
Wei Liu ◽  
Yang Zhang ◽  
Dongyang Wang ◽  
Haonan Shi ◽  
...  
Keyword(s):  
Transport Properties ◽  
Effective Mass ◽  
Electrical Transport ◽  
Carrier Density ◽  
Electrical Transport Properties ◽  
Carrier Effective Mass ◽  
Thermoelectric Parameters

Among these intricately coupled thermoelectric parameters, the carrier effective mass (m*) and carrier density (n) are two key parameters to determine the electrical transport properties. To enhance the broad-temperature thermoelectric...

Lattice-Mismatch Strain and Confinement in Nanoscale Si/SiO2 Structures Fabricated Using Thermal Oxidation

MRS Advances ◽  
2019 ◽  
Vol 4 (5-6) ◽  
pp. 351-357 ◽  
Author(s):  
Erin I. Vaughan ◽  
Clay S. Mayberry ◽  
Danhong Huang ◽  
Ashwani K. Sharma
Keyword(s):  
Band Structure ◽  
Effective Mass ◽  
Thermal Oxidation ◽  
Lattice Mismatch ◽  
Hole Transport ◽  
Bandgap Energy ◽  
Transient Time ◽  
Mismatch Strain ◽  
Carrier Effective Mass ◽  
Order Of Magnitude

ABSTRACTThe behavior of electron and hole transport in semiconductor materials is influenced by lattice-mismatch at the interface. It is well known that carrier scattering in a confined region is dramatically reduced. In this work, we studied the effects of coupling both the strain and confinement simultaneously. We report on the fabrication and characterization of nanoscale planar, wall-like, and wire-like Si/SiO2 structures. As the Si nanostructure dimensions were scaled down to the quantum regime by thermal oxidation of the Si, changes to the band structure and carrier effective mass were observed by both optical and electrical techniques. Transient-time response measurements were performed to examine the carrier generation and recombination behavior as a function of scaling. Signal rise times decreased for both carrier types by an order of magnitude as Si dimensions were reduced from 200 to 10 nm, meaning that the carrier velocity is increasing with smaller scale structures. This result is indicative of decreased Si bandgap energy and carrier effective mass. Photoluminescence measurements taken at 50K showed changes in the PL response peak energies, which illustrates changes in the band structure, as the Si/SiO2 dimensions are scaled.

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