scholarly journals Dual-Gate Organic Field-Effect Transistor for pH Sensors with Tunable Sensitivity

2018 ◽  
Vol 5 (1) ◽  
pp. 1800381 ◽  
Author(s):  
Raphael Pfattner ◽  
Amir M. Foudeh ◽  
Shucheng Chen ◽  
Weijun Niu ◽  
James R. Matthews ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Ph Sensors ◽  
Organic Field Effect Transistor ◽  
Dual Gate ◽  
Effect Transistor

Dual-gate gallium-arsenide microwave field-effect transistor

1971 ◽  
Vol 7 (22) ◽  
pp. 661 ◽  
Author(s):  
J.A. Turner ◽  
A.J. Waller ◽  
E. Kelly ◽  
D. Parker
Keyword(s):  
Gallium Arsenide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Microwave Field ◽  
Dual Gate ◽  
Effect Transistor

scholarly journals Highly Sensitive and Selective Sodium Ion Sensor Based on Silicon Nanowire Dual Gate Field-Effect Transistor

Sensors ◽  
2021 ◽  
Vol 21 (12) ◽  
pp. 4213
Author(s):  
Seong-Kun Cho ◽  
Won-Ju Cho
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Silicon Nanowire ◽  
Silicon On Insulator ◽  
Sodium Ion ◽  
Ion Sensor ◽  
Highly Sensitive ◽  
Selective Membrane ◽  
Dual Gate ◽  
Effect Transistor

In this study, a highly sensitive and selective sodium ion sensor consisting of a dual-gate (DG) structured silicon nanowire (SiNW) field-effect transistor (FET) as the transducer and a sodium-selective membrane extended gate (EG) as the sensing unit was developed. The SiNW channel DG FET was fabricated through the dry etching of the silicon-on-insulator substrate by using electrospun polyvinylpyrrolidone nanofibers as a template for the SiNW pattern transfer. The selectivity and sensitivity of sodium to other ions were verified by constructing a sodium ion sensor, wherein the EG was electrically connected to the SiNW channel DG FET with a sodium-selective membrane. An extremely high sensitivity of 1464.66 mV/dec was obtained for a NaCl solution. The low sensitivities of the SiNW channel FET-based sodium ion sensor to CaCl2, KCl, and pH buffer solutions demonstrated its excellent selectivity. The reliability and stability of the sodium ion sensor were verified under non-ideal behaviors by analyzing the hysteresis and drift. Therefore, the SiNW channel DG FET-based sodium ion sensor, which comprises a sodium-selective membrane EG, can be applied to accurately detect sodium ions in the analyses of sweat or blood.

Spatial Extent of Interaction between Excitons and Polarons in a Bilayer Organic Field-Effect Transistor

ACS Photonics ◽  
2021 ◽  
Author(s):  
Haripriya Kesavan ◽  
Subhamoy Sahoo ◽  
Sanjoy Jena ◽  
Jayeeta Bhattacharyya ◽  
Debdutta Ray
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Spatial Extent ◽  
Organic Field Effect Transistor ◽  
Effect Transistor

Theoretical Insights on Tunable Optoelectronics and Charge Mobilities in Cyano-Perylenediimides: Interplays between -CN Numbers and Positions

2021 ◽  
Author(s):  
Raka Ahmed ◽  
Arun Manna
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Organic Field Effect Transistor ◽  
Research Attention ◽  
Effect Transistor ◽  
Potential Use

Air-stable perylenediimide (PDI) and its derivatives, in particularly the cyano-functionalized ones have attracted great research attention for their potential use in flexible optoelectronics, organic field-effect-transistor (OFET) as n-type transport materials...

Noncoplanar organic field-effect transistor based on copper phthalocyanine

2006 ◽  
Vol 88 (12) ◽  
pp. 121907 ◽  
Author(s):  
Chong-an Di ◽  
Gui Yu ◽  
Yunqi Liu ◽  
Xinjun Xu ◽  
Yabin Song ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Copper Phthalocyanine ◽  
Organic Field Effect Transistor ◽  
Effect Transistor

An ambipolar organic field-effect transistor based on an AIE-active single crystal with a high mobility level of 2.0 cm2 V−1 s−1

2016 ◽  
Vol 52 (11) ◽  
pp. 2370-2373 ◽  
Author(s):  
Jian Deng ◽  
Yuanxiang Xu ◽  
Liqun Liu ◽  
Cunfang Feng ◽  
Jia Tang ◽  
...  
Keyword(s):  
Single Crystal ◽  
Field Effect ◽  
Field Effect Transistor ◽  
High Mobility ◽  
Active Materials ◽  
Organic Field Effect Transistor ◽  
Effect Transistor

Ambipolar OFETs based on AIE-active materials were demonstrated to have a high and balanced mobility level of 2.0 cm2 V−1 s−1.

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