Narrow Heater Bottom Electrode-Based Phase Change Memory as a Bidirectional Artificial Synapse

2018 ◽  
Vol 4 (9) ◽  
pp. 1800223 ◽  
Author(s):  
Selina La Barbera ◽  
Denys R. B. Ly ◽  
Gabriele Navarro ◽  
Niccolò Castellani ◽  
Olga Cueto ◽  
...  
Keyword(s):  
Phase Change ◽  
Bottom Electrode ◽  
Phase Change Memory ◽  
Artificial Synapse ◽  
Change Memory

scholarly journals Achievement of Gradual Conductance Characteristics Based on Interfacial Phase-Change Memory for Artificial Synapse Applications

Electronics ◽  
2020 ◽  
Vol 9 (8) ◽  
pp. 1268
Author(s):  
Shinyoung Kang ◽  
Juyoung Lee ◽  
Myounggon Kang ◽  
Yunheub Song
Keyword(s):  
Phase Change ◽  
Bottom Electrode ◽  
Phase Change Memory ◽  
Long Term Potentiation ◽  
Interfacial Phase ◽  
Artificial Synapse ◽  
Electrode Contact ◽  
Contact Size ◽  
Change Memory

In this paper, gradual and symmetrical long-term potentiation (LTP) and long-term depression (LTD) were achieved by applying the optimal electrical pulse condition of the interfacial phase-change memory (iPCM) based on a superlattice (SL) structure fabricated by stacking GeTe/Sb2Te3 alternately to implement an artificial synapse in neuromorphic computing. Furthermore, conventional phase-change random access memory (PCRAM) based on a Ge–Sb–Te (GST) alloy with an identical bottom electrode contact size was fabricated to compare the electrical characteristics. The results showed a reduction in the reset energy consumption of the GeTe/Sb2Te3 (GT/ST) iPCM by more than 69% of the GST alloy for each bottom electrode contact size. Additionally, the GT/ST iPCM achieved gradual conductance tuning and 90.6% symmetry between LTP and LTD with a relatively unsophisticated pulse scheme. Based on the above results, GT/ST iPCM is anticipated to be exploitable as a synaptic device used for brain-inspired computing and to be utilized for next-generation non-volatile memory.

Design of Side Bottom-Electrode-Contact for High Density Phase-Change Memory Array

2012 ◽  
Vol 12 (10) ◽  
pp. 7939-7943
Author(s):  
Yan Liu ◽  
Zhitang Song ◽  
Bo Liu ◽  
Jia Xu ◽  
Houpeng Chen ◽  
...  
Keyword(s):  
Phase Change ◽  
Bottom Electrode ◽  
Phase Change Memory ◽  
High Density ◽  
Memory Array ◽  
Electrode Contact ◽  
Change Memory

The effect of oxygen plasma ashing on the resistance of TiN bottom electrode for phase change memory

2015 ◽  
Vol 36 (5) ◽  
pp. 056001 ◽  
Author(s):  
Dan Gao ◽  
Bo Liu ◽  
Ying Li ◽  
Zhitang Song ◽  
Wanchun Ren ◽  
...  
Keyword(s):  
Phase Change ◽  
Oxygen Plasma ◽  
Bottom Electrode ◽  
Phase Change Memory ◽  
Effect Of Oxygen ◽  
Change Memory

Performance improvement of phase-change memory cell with cup-shaped bottom electrode contact

2008 ◽  
Vol 93 (10) ◽  
pp. 103107 ◽  
Author(s):  
L. C. Wu ◽  
Z. T. Song ◽  
F. Rao ◽  
Y. F. Gong ◽  
B. Liu ◽  
...  
Keyword(s):  
Phase Change ◽  
Performance Improvement ◽  
Bottom Electrode ◽  
Phase Change Memory ◽  
Memory Cell ◽  
Electrode Contact ◽  
Change Memory

Full Integration of Highly Reliable Phase Change Memory With Advanced Ring Type Bottom Electrode Contact

2007 ◽  
Vol 90 (1) ◽  
pp. 88-94 ◽  
Author(s):  
J. M. SHIN ◽  
Y. J. SONG ◽  
D. W. KANG ◽  
C. W. JEONG ◽  
K. C. RYOO ◽  
...  
Keyword(s):  
Phase Change ◽  
Bottom Electrode ◽  
Phase Change Memory ◽  
Ring Type ◽  
Electrode Contact ◽  
Change Memory

scholarly journals Retraction: Kang, S., et al. Achievement of Gradual Conductance Characteristics Based on Interfacial Phase-Change Memory for Artificial Synapse Applications. Electronics 2020, 9, 1268

Electronics ◽  
2021 ◽  
Vol 10 (4) ◽  
pp. 408
Author(s):  
Shinyoung Kang ◽  
Juyoung Lee ◽  
Myounggon Kang ◽  
Yunheub Song
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Interfacial Phase ◽  
Artificial Synapse ◽  
Change Memory

The authors and journal retract the article, “Achievement of Gradual Conductance Characteristics Based on Interfacial Phase-Change Memory for Artificial Synapse Applications” [...]

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