Design of CMOS Compatible, High-Speed, Highly-Stable Complementary Switching with Multilevel Operation in 3D Vertically Stacked Novel HfO2
/Al2
O3
/TiO
x
(HAT) RRAM
2018 ◽
Vol 4
(2)
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pp. 1700561
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1991 ◽
Vol 38
(3)
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pp. 322-326
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2002 ◽
Vol 38
(2)
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pp. 193-196
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2007 ◽
Vol 19
(3)
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pp. 152-154
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Keyword(s):
2004 ◽
Vol 32
(5)
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pp. 425-430
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