CMOS-Compatible All-Si High-Speed Waveguide Photodiodes With High Responsivity in Near-Infrared Communication Band

2007 ◽  
Vol 19 (3) ◽  
pp. 152-154 ◽  
Author(s):  
M. W. Geis ◽  
S. J. Spector ◽  
M. E. Grein ◽  
R. T. Schulein ◽  
J. U. Yoon ◽  
...  
Keyword(s):  
High Speed ◽  
Near Infrared ◽  
Infrared Communication ◽  
High Responsivity ◽  
Cmos Compatible

scholarly journals Non-fullerene-based organic photodetectors for infrared communication

2021 ◽  
Author(s):  
Maxime Babics ◽  
Helen Bristow ◽  
Weimin Zhang ◽  
Andrew Wadsworth ◽  
Marios Neophytou ◽  
...  
Keyword(s):  
Near Infrared ◽  
Infrared Communication ◽  
High Responsivity ◽  
Organic Photodetectors

We developed a new non-fullerene acceptor with high responsivity in the near infrared and demonstrated its potential for infrared communication.

A CMOS-compatible high-speed silicon lateral trench photodetector

2002 ◽  
Author(s):  
M. Yang ◽  
K. Rim ◽  
D. Rogers ◽  
J. Schaub ◽  
J. Welser ◽  
...  
Keyword(s):  
High Speed ◽  
Cmos Compatible

Fabrication and characterization of novel high-speed InGaAs/InP uni-traveling-carrier photodetector for high responsivity

2015 ◽  
Vol 24 (10) ◽  
pp. 108506
Author(s):  
Qing-Tao Chen ◽  
Yong-Qing Huang ◽  
Jia-Rui Fei ◽  
Xiao-Feng Duan ◽  
Kai Liu ◽  
...  
Keyword(s):  
High Speed ◽  
High Responsivity ◽  
Fabrication And Characterization

scholarly journals Highly Efficient Near-Infrared Detector Based on Optically Resonant Dielectric Nanodisks

Nanomaterials ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 428
Author(s):  
Reza Masoudian Saadabad ◽  
Christian Pauly ◽  
Norbert Herschbach ◽  
Dragomir N. Neshev ◽  
Haroldo T. Hattori ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
High Speed ◽  
Near Infrared ◽  
Infrared Detector ◽  
High Quantum Efficiency ◽  
Fast Detection ◽  
High Quantum ◽  
Resonant Modes ◽  
Infrared Wavelengths ◽  
Dielectric Metasurface

Fast detection of near-infrared (NIR) photons with high responsivity remains a challenge for photodetectors. Germanium (Ge) photodetectors are widely used for near-infrared wavelengths but suffer from a trade-off between the speed of photodetection and quantum efficiency (or responsivity). To realize a high-speed detector with high quantum efficiency, a small-sized photodetector efficiently absorbing light is required. In this paper, we suggest a realization of a dielectric metasurface made of an array of subwavelength germanium PIN photodetectors. Due to the subwavelength size of each pixel, a high-speed photodetector with a bandwidth of 65 GHz has been achieved. At the same time, high quantum efficiency for near-infrared illumination can be obtained by the engineering of optical resonant modes to localize optical energy inside the intrinsic Ge disks. Furthermore, small junction capacitance and the possibility of zero/low bias operation have been shown. Our results show that all-dielectric metasurfaces can improve the performance of photodetectors.

scholarly journals Nanoprinted high-neuron-density optical linear perceptrons performing near-infrared inference on a CMOS chip

2021 ◽  
Vol 10 (1) ◽  
Author(s):  
Elena Goi ◽  
Xi Chen ◽  
Qiming Zhang ◽  
Benjamin P. Cumming ◽  
Steffen Schoenhardt ◽  
...  
Keyword(s):  
Machine Learning ◽  
High Speed ◽  
Near Infrared ◽  
Single Layer ◽  
Infrared Region ◽  
Optical Devices ◽  
Medical Diagnostics ◽  
Oxide Semiconductor ◽  
Process Data ◽  
Neuron Density

AbstractOptical machine learning has emerged as an important research area that, by leveraging the advantages inherent to optical signals, such as parallelism and high speed, paves the way for a future where optical hardware can process data at the speed of light. In this work, we present such optical devices for data processing in the form of single-layer nanoscale holographic perceptrons trained to perform optical inference tasks. We experimentally show the functionality of these passive optical devices in the example of decryptors trained to perform optical inference of single or whole classes of keys through symmetric and asymmetric decryption. The decryptors, designed for operation in the near-infrared region, are nanoprinted on complementary metal-oxide–semiconductor chips by galvo-dithered two-photon nanolithography with axial nanostepping of 10 nm1,2, achieving a neuron density of >500 million neurons per square centimetre. This power-efficient commixture of machine learning and on-chip integration may have a transformative impact on optical decryption3, sensing4, medical diagnostics5 and computing6,7.

scholarly journals High responsivity graphene photodetectors from visible to near-infrared by photogating effect

AIP Advances ◽  
2018 ◽  
Vol 8 (11) ◽  
pp. 115106 ◽  
Author(s):  
Fang Luo ◽  
Mengjian Zhu ◽  
Yuan tan ◽  
Honghui Sun ◽  
Wei Luo ◽  
...  
Keyword(s):  
Near Infrared ◽  
High Responsivity

scholarly journals High Speed and High Responsivity Avalanche Photodiode Fabricated by Standard CMOS Process in Blue Wavelength Region

2018 ◽  
Vol E101.C (7) ◽  
pp. 574-580
Author(s):  
Koichi IIYAMA ◽  
Takeo MARUYAMA ◽  
Ryoichi GYOBU ◽  
Takuya HISHIKI ◽  
Toshiyuki SHIMOTORI
Keyword(s):  
High Speed ◽  
Wavelength Region ◽  
Avalanche Photodiode ◽  
Cmos Process ◽  
High Responsivity ◽  
Standard Cmos Process ◽  
Blue Wavelength

scholarly journals Heterostructured silicon-germanium-silicon p-i-n avalanche photodetectors for chip-integrated optoelectronics -INVITED

2021 ◽  
Vol 255 ◽  
pp. 01002
Author(s):  
Daniel Benedikovic ◽  
Leopold Virot ◽  
Guy Aubin ◽  
Jean-Michel Hartmann ◽  
Farah Amar ◽  
...  
Keyword(s):  
Health Monitoring ◽  
Optical Communications ◽  
Silicon Germanium ◽  
High Speed ◽  
Near Infrared ◽  
Building Blocks ◽  
Electrical Signal ◽  
Avalanche Photodetectors ◽  
Infrared Wavelengths ◽  
Germanium Silicon

Optical photodetectors are at the forefront of photonic research since the rise of integrated optics. Photodetectors are fundamental building blocks for chip-scale optoelectronics, enabling conversion of light into an electrical signal. Such devices play a key role in many surging applications from communication and computation to sensing, biomedicine and health monitoring, to name a few. However, chip integration of optical photodetectors with improved performances is an on-going challenge for mainstream optical communications at near-infrared wavelengths. Here, we present recent advances in heterostructured silicon-germanium-silicon p-i-n photodetectors, enabling high-speed detection on a foundry-compatible monolithic platform.

Low-Voltage and High-Responsivity Germanium Bipolar Phototransistor for Optical Detections in the Near-Infrared Regime

2008 ◽  
Vol 29 (10) ◽  
pp. 1124-1127 ◽  
Author(s):  
Kah-Wee Ang ◽  
Ming-Bin Yu ◽  
Guo-Qiang Lo ◽  
Dim-Lee Kwong
Keyword(s):  
Near Infrared ◽  
Low Voltage ◽  
High Responsivity

scholarly journals Ultrafast electro-optic light with subcycle control

Science ◽  
2018 ◽  
Vol 361 (6409) ◽  
pp. 1358-1363 ◽  
Author(s):  
David R. Carlson ◽  
Daniel D. Hickstein ◽  
Wei Zhang ◽  
Andrew J. Metcalf ◽  
Franklyn Quinlan ◽  
...  
Keyword(s):  
High Speed ◽  
Near Infrared ◽  
Continuous Wave ◽  
Mode Locking ◽  
Light Sources ◽  
Electro Optic ◽  
High Pulse ◽  
Optical Cycle ◽  
Rapid Transients ◽  
And Control

Light sources that are ultrafast and ultrastable enable applications like timing with subfemtosecond precision and control of quantum and classical systems. Mode-locked lasers have often given access to this regime, by using their high pulse energies. We demonstrate an adaptable method for ultrastable control of low-energy femtosecond pulses based on common electro-optic modulation of a continuous-wave laser light source. We show that we can obtain 100-picojoule pulse trains at rates up to 30 gigahertz and demonstrate sub–optical cycle timing precision and useful output spectra spanning the near infrared. Our source enters the few-cycle ultrafast regime without mode locking, and its high speed provides access to nonlinear measurements and rapid transients.

Sign in / Sign up

Export Citation Format

Share Document