Probing Electron Mobility of Monolayer MoS2 Field-Effect Transistors in Aqueous Environments

2018 ◽  
Vol 4 (3) ◽  
pp. 1700418 ◽  
Author(s):  
Ming-Pei Lu ◽  
Xiao-Yen Dai ◽  
Ming-Yen Lu
Keyword(s):  
Electron Mobility ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Monolayer Mos2 ◽  
Aqueous Environments

Benchmarking electrolyte gated monolayer MoS2 field effect transistors in aqueous environments

2021 ◽  
Author(s):  
Steffen Rühl ◽  
Max Heyl ◽  
Fabian Gärisch ◽  
Sylke Blumstengel ◽  
Giovanni Ligorio ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Monolayer Mos2 ◽  
Aqueous Environments

High-Electron-Mobility Ge n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with High-Pressure Oxidized Y2O3

2011 ◽  
Vol 4 (6) ◽  
pp. 064201 ◽  
Author(s):  
Tomonori Nishimura ◽  
Choong Hyun Lee ◽  
Toshiyuki Tabata ◽  
Sheng Kai Wang ◽  
Kosuke Nagashio ◽  
...  
Keyword(s):  
High Pressure ◽  
Metal Oxide ◽  
Electron Mobility ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
High Electron ◽  
High Electron Mobility

scholarly journals Diacenopentalene dicarboximides as new n-type organic semiconductors for field-effect transistors

2016 ◽  
Vol 4 (37) ◽  
pp. 8758-8764 ◽  
Author(s):  
Gaole Dai ◽  
Jingjing Chang ◽  
Linzhi Jing ◽  
Chunyan Chi
Keyword(s):  
Organic Semiconductors ◽  
Electron Mobility ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Processing Technique ◽  
Solution Processing ◽  
Effect Transistor

Two diacenopentalene dicarboximides were synthesized, and their devices made with solution-processing technique exhibited n-type field-effect transistor behavior with electron mobility of up to 0.06 cm2 V−1 s−1.

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