scholarly journals Relation between Interfacial Band-Bending and Electronic Properties in Organic Semiconductor Pentacene

2017 ◽  
Vol 3 (11) ◽  
pp. 1700136 ◽  
Author(s):  
Panlong Zhang ◽  
Shuai Zhao ◽  
Haibo Wang ◽  
Jidong Zhang ◽  
Jianwu Shi ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Organic Semiconductor ◽  
Band Bending

Process-Dependent Electronic Structure at Metallized GaAs Contacts

1992 ◽  
Vol 260 ◽  
Author(s):  
L. J. Brillson ◽  
I. M. Vitomirov ◽  
A. Raisanen ◽  
S. Chang ◽  
R. E. Viturro ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Chemical Interaction ◽  
Deep Level ◽  
Multiple Roles ◽  
Atomic Scale ◽  
Photoemission Spectroscopy ◽  
Band Bending ◽  
Barrier Heights ◽  
Barrier Formation ◽  
Thermally Driven

ABSTRACTThe influence of metallization and processing on Schottky barrier formation provides the basis for one of several fruitful approaches for controlling junction electronic properties. Interface cathodo-and photoluminescence measurements reveal that electrically-active deep levels form on GaAs(100) surfaces and metal interfaces which depend on thermally-driven surface stoichiometry and reconstruction, chemical interaction, as well as surface misorientation and bulk crystal quality. These interface states are discrete and occur at multiple gap energies which can account for observed band bending. Characteristic trends in such deep level emission with interface processing provide guides for optimizing interface electronic behavior. Correspondingly, photoemission and internal photoemission spectroscopy measurements indicate self-consistent changes in barrier heights which may be heterogeneous and attributable to interface chemical reactions observed on a monolayer scale. These results highlight the multiple roles of atomic-scale structure in forming macroscopic electronic properties of compound semiconductor-metal junctions.

Electronic properties of the organic semiconductor hetero-interface CuPc/C60

2005 ◽  
Vol 252 (1) ◽  
pp. 143-147 ◽  
Author(s):  
O.V. Molodtsova ◽  
T. Schwieger ◽  
M. Knupfer
Keyword(s):  
Electronic Properties ◽  
Organic Semiconductor

Electronic Properties of Chemically Etched CdTe Thin Films: Role of Te for Back-Contact Formation

2001 ◽  
Vol 668 ◽  
Author(s):  
D. Kraft ◽  
A. Thiβen ◽  
M. Campo ◽  
M. Beerbom ◽  
T. Mayer ◽  
...  
Keyword(s):  
Fermi Level ◽  
Electronic Properties ◽  
Photoelectron Spectroscopy ◽  
Valence Band Maximum ◽  
Ex Situ ◽  
Back Contact ◽  
Experimental Conditions ◽  
Band Bending ◽  
Fermi Level Position ◽  
Contact Formation

ABSTRACTImprovement of electric back contact formation is one of the major issues of the CdTe thin film solar cell research. Chemical etching of CdTe before metallization is accepted to improve contact formation. It is believed that a CdTe/Te contact is formed by this procedure leading to a Fermi level position in the CdTe close to the valence band maximum for low contact resistance. We have studied the electronic properties of chemically etched CdTe surfaces with photoelectron spectroscopy. Etching of the samples was performed in air (“ex-situ“) as well as in an electrochemical setup directly attached to the UHV system (“in-situ“). The formation of a Te layer is clearly shown by (S)XPS. In contrast to previous studies we could not detect the formation of a p-CdTe surface for different experimental conditions. The detected Fermi level position indicates still band bending and hence a blocking Schottky barrier.

Chemistry and electronic properties of metal-organic semiconductor interfaces: Al, Ti, In, Sn, Ag, and Au on PTCDA

1996 ◽  
Vol 54 (19) ◽  
pp. 13748-13758 ◽  
Author(s):  
Y. Hirose ◽  
A. Kahn ◽  
V. Aristov ◽  
P. Soukiassian ◽  
V. Bulovic ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Organic Semiconductor ◽  
Semiconductor Interfaces ◽  
Metal Organic

scholarly journals Electronic properties of organic semiconductor blends: Ambipolar mixtures of phthalocyanine and fullerene

2007 ◽  
Vol 90 (21) ◽  
pp. 212112 ◽  
Author(s):  
Andreas Opitz ◽  
Markus Bronner ◽  
Wolfgang Brütting ◽  
Marcel Himmerlich ◽  
Juergen A. Schaefer ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Organic Semiconductor

scholarly journals Probing the edge-related properties of atomically thin MoS2 at nanoscale

2019 ◽  
Vol 10 (1) ◽  
Author(s):  
Teng-Xiang Huang ◽  
Xin Cong ◽  
Si-Si Wu ◽  
Kai-Qiang Lin ◽  
Xu Yao ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Double Resonance ◽  
Transition Metal Dichalcogenides ◽  
Raman Peak ◽  
Defect Engineering ◽  
Band Bending ◽  
Electron Phonon Interaction ◽  
Edge Defects ◽  
Metal Dichalcogenides ◽  
Tip Enhanced Raman Spectroscopy

AbstractDefects can induce drastic changes of the electronic properties of two-dimensional transition metal dichalcogenides and influence their applications. It is still a great challenge to characterize small defects and correlate their structures with properties. Here, we show that tip-enhanced Raman spectroscopy (TERS) can obtain distinctly different Raman features of edge defects in atomically thin MoS2, which allows us to probe their unique electronic properties and identify defect types (e.g., armchair and zigzag edges) in ambient. We observed an edge-induced Raman peak (396 cm−1) activated by the double resonance Raman scattering (DRRS) process and revealed electron–phonon interaction in edges. We further visualize the edge-induced band bending region by using this DRRS peak and electronic transition region using the electron density-sensitive Raman peak at 406 cm−1. The power of TERS demonstrated in MoS2 can also be extended to other 2D materials, which may guide the defect engineering for desired properties.

Experimental and theoretical analyses on structural (monomer and dimeric form), spectroscopic and electronic properties of an organic semiconductor 2,6-dimethoxyanthracene

2019 ◽  
Vol 94 (8) ◽  
pp. 1153-1167 ◽  
Author(s):  
K Eswar Srikanth ◽  
K Ramaiah ◽  
D Jagadeeswara Rao ◽  
K. Prabhakara Rao ◽  
J Laxman Naik ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Organic Semiconductor ◽  
Dimeric Form ◽  
Theoretical Analyses

Determination of frontier orbital alignment and band bending at an organic semiconductor heterointerface by combined x-ray and ultraviolet photoemission measurements

1998 ◽  
Vol 73 (8) ◽  
pp. 1026-1028 ◽  
Author(s):  
R. Schlaf ◽  
B. A. Parkinson ◽  
P. A. Lee ◽  
K. W. Nebesny ◽  
N. R. Armstrong
Keyword(s):  
Organic Semiconductor ◽  
Frontier Orbital ◽  
Band Bending ◽  
X Ray
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